IRF7413PBF-1 [INFINEON]
Industry-standard pinout SO-8 Package;
| 型号： | IRF7413PBF-1 |
| 厂家： | 
Infineon |
| 描述： | Industry-standard pinout SO-8 Package |
| 文件： | 总9页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF7413PbF-1
HEXFET® Power MOSFET
A
VDS
30
0.011
52
V
Ω
A
1
2
3
4
8
7
S
S
S
G
D
D
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
6
5
nC
A
D
D
13
(@TA = 25°C)
SO-8
Top View
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
MSL1, Industrial qualification
Standard Pack
Form
Tube/Bulk
Base Part Number
Package Type
Orderable Part Number
Quantity
95
4000
IRF7413PbF-1
IRF7413TRPbF-1
IRF7413PbF-1
SO-8
Tape and Reel
Absolute Maximum Ratings
Symbol
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Max
Units
VDS
30
± 20
13
V
V
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
@ TA = 25°C
D
D
@ TA = 70°C
9.2
58
A
DM
P
@TA = 25°C
Power Dissipation
2.5
W
mW/°C
mJ
D
Linear Derating Factor
Single Pulse Avalanche Energency
0.02
260
E
AS
V/ns
°C
dv/dt
Peak Diode Recovery dv/dt
5.0
J, TSTG
T
Junction and Storage Temperature Range
-55 to +150
Thermal Resistance Ratings
Symbol
Parameter
Junction-to-Drain Lead
Typ
–––
Max
20
Units
RθJL
RθJA
°C/W
Junction-to-Ambient
–––
50
1
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IRF7413PbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min Typ Max Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
VGS = 0V, ID = 250μA
Δ
Δ
V(BR)DSS/ TJ
Breakdown Voltage Temp. Coefficient
––– 0.034 ––– V/°C Reference to 25°C, ID = 1mA
–––
–––
1.0
––– 0.011
––– 0.018
VGS = 10V, ID = 7.3A
VGS = 4.5V, ID = 3.7A
VDS = VGS, ID = 250μA
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
–––
–––
–––
–––
3.0
–––
12
V
S
Forward Transconductance
10
VDS = 10V, ID = 3.7A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 30V, VGS = 0V
IDSS
IGSS
Drain-to-Source Leakage Current
μA
25
VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
––– -100
VGS = -20V
nA
–––
52
100
79
VGS = 20V
ID = 7.3A
Qg
Qgs
Qgd
RG
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Resistance
6.1
16
9.2
23
nC VDS = 24V
VGS = 10V, See Fig. 6 and 9
Ω
–––
8.6
50
3.7
–––
–––
–––
–––
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
VDD = 15V
ID = 7.3A
Ω
ns RG = 6.2
Turn-Off Delay Time
Fall Time
52
Ω,
46
RG = 2.0 See Fig. 10
Ciss
Coss
Crss
Input Capacitance
––– 1800 –––
VGS = 0V
Output Capacitance
–––
–––
680
240
–––
–––
VDS = 25V
pF
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
I
I
–––
–––
3.1
S
A
Pulsed Source Current
integral reverse
–––
–––
58
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
74
1.0
110
300
V
T = 25°C, I = 7.3A, V = 0V
SD
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
ns T = 25°C, I = 7.3A
J F
rr
di/dt = 100A/μs
Q
200
nC
rr
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 7.3A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Starting TJ = 25°C, L = 9.8mH
ꢀ Surface mounted on FR-4 board
RG = 25Ω, IAS =7.3A. (See Figure 12)
Rθ is measured at TJ approximately 90°C
2
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November 19, 2013
IRF7413PbF-1
100
10
1
100
10
1
VGS
VGS
15V
TOP
15V
TOP
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
BOTTOM 3.0V
3.0V
3.0V
20μs PULSE WIDTH
= 150°C
20μs PULSE WIDTH
= 25°C
T
J
T
J
A
A
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
1.5
1.0
0.5
0.0
I
= 7.3A
D
T = 150°C
J
TJ = 25°C
10
VDS = 10V
20μs PULSE WIDTH
V
= 10V
GS
1
A
4.5A
3.0
3.5
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
3
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November 19, 2013
IRF7413PbF-1
20
16
12
8
3200
2800
2400
2000
1600
1200
800
I
= 7.3A
V
C
C
C
= 0V,
f = 1MHz
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
V
V
= 24V
= 15V
gs
gd
gd
ds
DS
DS
= C
C
C
= C + C
iss
ds
gd
oss
C
rss
4
400
FOR TEST CIRCUIT
SEE FIGURE 9
0
0
A
A
1
10
100
0
10
20
30
40
50
60
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 25°C
J
T = 150°C
J
10
100us
1ms
°
T = 25 C
C
10ms
°
T = 150 C
Single Pulse
J
V
GS
= 0V
1
A
1
0.1
1
10
100
0.4
1.2
2.0
2.8
3.6
V
, Drain-to-Source Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7413PbF-1
RD
VDS
Q
G
VGS
10V
D.U.T.
Q
Q
GD
GS
RG
+ VDD
-
V
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
V
DS
50KΩ
90%
.2μF
12V
.3μF
+
V
DS
D.U.T.
-
10%
V
GS
V
GS
3mA
t
t
r
t
t
f
d(on)
d(off)
I
I
D
G
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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November 19, 2013
IRF7413PbF-1
600
500
400
300
200
100
0
I
D
TOP
3.3A
6.0A
15V
BOTTOM 7.3A
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
25
50
75
100
125
150
t
Starting T , Junction Temperature ( oC)
p
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
6
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IRF7413PbF-1
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 13. For N-Channel HEXFETS
7
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IRF7413PbF-1
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
0.635 BASIC
e1 .025 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING& TOLERANCINGPER ASME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT LINE CONF ORMS T O JE DEC OU T LINE MS -012AA.
5
6
7
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
A = AS S E MB L Y S IT E CODE
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
8
November 19, 2013
IRF7413PbF-1
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Qualification information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
SO-8
(per JEDEC J-STD-020D††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 19, 2013
相关型号：
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Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8
INFINEON
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