IRF7420PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF7420PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总9页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95633
IRF7420PbF
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Lead-Free
VDSS
-12V
RDS(on) max
14mΩ@VGS = -4.5V -11.5A
17.5mΩ@VGS = -2.5V -9.8A
26mΩ@VGS = -1.8V
ID
-8.1A
Description
These P-Channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniquestoachievetheextremelylowon-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
A
1
2
3
4
8
D
S
S
7
D
6
S
G
D
5
D
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withtheseimprovements,multiple
devicescanbeusedinanapplicationwithdramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
SO-8
Top View
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
-20
Units
V
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
-11.5
-9.2
A
-46
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
Power Dissipation
2.5
W
1.6
Linear Derating Factor
20
mW/°C
VGS
Gate-to-Source Voltage
±8
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
RθJA
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1
8/11/04
IRF7420PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-12 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.007 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 14
––– 17.5
––– 26
-0.4 ––– -0.9
32 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
––– 38 –––
––– 8.1 –––
––– 8.7 –––
VGS = -4.5V, ID = -11.5A
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
VGS = -2.5V, ID = -9.8A
VGS = -1.8V, ID = -8.1A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -11.5A
VDS = -9.6V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 70°C
VGS = -8V
VGS(th)
gfs
IDSS
Gate Threshold Voltage
V
S
Forward Transconductance
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA
IGSS
VGS = 8V
Qg
ID = -11.5A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -6V
VGS = -4.5V
––– 8.8
––– 8.8
13
13
VDD = -6V, VGS = -4.5V
ID = -1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 291 437
––– 225 338
––– 3529 –––
––– 1013 –––
––– 656 –––
RD = 6Ω
RG = 6Ω
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = -10V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
-2.5
-46
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.2
V
TJ = 25°C, IS = -2.5A, VGS = 0V
––– 62
––– 61
93
92
ns
TJ = 25°C, IF = -2.5A
Qrr
µC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on 1 in square Cu board, t ≤ 10sec.
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7420PbF
100
10
1
100
10
VGS
VGS
-7.0V
TOP
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
TOP
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
BOTTOM -1.0V
1
-1.0V
0.1
0.01
-1.0V
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
100
-11.5A
=
I
D
1.5
1.0
0.5
0.0
10
1
°
T = 150 C
J
°
T = 25 C
J
V
= -10V
20µs PULSE WIDTH
DS
V
=-4.5V
GS
0.1
0.5
1.0
1.5
2.0 2.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7420PbF
6
5
4
3
2
1
0
5500
I =
D
-11.5A
V
C
= 0V, f = 1 MHZ
V
V
=-9.6V
=-6V
GS
DS
DS
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
= C + C , C
SHORTED
iss
gs gd ds
C
C
= C
gd
rss
oss
= C + C
ds
gd
Ciss
Coss
Crss
0
0
10
20
30
40
50
1
10
100
Q , Total Gate Charge (nC)
G
-V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
100us
1ms
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
1
0.1
0.4
0.6
0.8
1.0
1.2
1
10
100
-V ,Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7420PbF
12
9
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
3
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
90%
Fig 9. Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
SINGLE PULSE
1
(THERMAL RESPONSE)
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7420PbF
0.025
0.020
0.015
0.010
0.005
0.08
0.06
0.04
0.02
0
V
= -1.8V
GS
I
= -11.5A
D
V
= -2.5V
GS
V
= -4.5V
40.0
GS
0.0
2.0
4.0
6.0
8.0
0.0
10.0
20.0
30.0
50.0
-V
GS,
Gate -to -Source Voltage (V)
-ID , Drain Current ( A )
Fig 12. Typical On-Resistance Vs.
Fig 13. Typical On-Resistance Vs.
Gate Voltage
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-
V
+
DS
Q
Q
GD
D.U.T.
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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IRF7420PbF
400
350
300
250
200
150
100
50
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
I
= -250µA
D
0
0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000
-75 -50 -25
0
25
50
75 100 125 150
Time (sec)
T , Temperature ( °C )
J
Fig 16. Typical Power Vs. Time
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
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7
IRF7420PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
0.635 BASIC
e1 .025 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PR INT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING& TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONF OR MS T O JEDE C OU T L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WE E K
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
A = AS S E MB LY S IT E CODE
LOT CODE
PART NUMBER
8
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IRF7420PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
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9
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