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IRF7425PBF [INFINEON]

HEXFET Power MOSFET; HEXFET功率MOSFET
IRF7425PBF
型号： IRF7425PBF
厂家： Infineon    Infineon
描述：

HEXFET Power MOSFET
HEXFET功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管
文件： 总9页 (文件大小：152K)
中文：  中文翻译
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PD- 96062  
IRF7425PbF  
HEXFET® Power MOSFET  
l Ultra Low On-Resistance  
l P-Channel MOSFET  
l Surface Mount  
l Available in Tape & Reel  
l Lead-Free  
VDSS  
20V  
RDS(on) max (mW)  
8.2@VGS = -4.5V  
13@VGS = -2.5V  
ID  
-15A  
-13A  
A
1
2
3
4
8
D
Description  
S
S
These P-Channel HEXFET® Power MOSFETs from  
International Rectifier utilize advanced processing  
techniquestoachievetheextremelylowon-resistance  
per silicon area. This benefit provides the designer  
with an extremely efficient device for use in battery  
and load management applications..  
7
D
6
S
G
D
5
D
SO-8  
Top View  
The SO-8 has been modified through a customized  
leadframe for enhanced thermal characteristics and  
multiple-die capability making it ideal in a variety of  
powerapplications. Withtheseimprovements,multiple  
devicescanbeusedinanapplicationwithdramatically  
reduced board space. The package is designed for  
vapor phase, infrared, or wave soldering techniques.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain- Source Voltage  
-20  
V
ID @ TA = 25°C  
ID @ TA= 70°C  
IDM  
Continuous Drain Current, VGS @ -4.5V  
Continuous Drain Current, VGS @ -4.5V  
Pulsed Drain Current   
-15  
-12  
A
-60  
2.5  
PD @TA = 25°C  
PD @TA = 70°C  
Power Dissipation ƒ  
Power Dissipation ƒ  
W
1.6  
Linear Derating Factor  
20  
mW/°C  
VGS  
Gate-to-Source Voltage  
± 12  
V
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to + 150  
°C  
Thermal Resistance  
Parameter  
Maximum Junction-to-Ambientƒ  
Max.  
50  
Units  
°C/W  
RθJA  
www.irf.com  
1
02/09/06  
IRF7425PbF  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
-20 ––– –––  
Conditions  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
V
VGS = 0V, ID = -250µA  
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient  
––– 0.010 ––– V/°C Reference to 25°C, ID = -1mA  
––– ––– 8.2  
––– ––– 13  
VGS = -4.5V, ID = -15A ‚  
VGS = -2.5V, ID = -13A ‚  
VDS = VGS, ID = -250µA  
VDS = -10V, ID = -15A  
VDS = -16V, VGS = 0V  
VDS = -16V, VGS = 0V, TJ = 70°C  
VGS = -12V  
RDS(on)  
Static Drain-to-Source On-Resistance  
mΩ  
VGS(th)  
gfs  
Gate Threshold Voltage  
-0.45 ––– -1.2  
44 ––– –––  
––– ––– -1.0  
––– ––– -25  
––– ––– -100  
––– ––– 100  
––– 87 130  
V
S
Forward Transconductance  
IDSS  
Drain-to-Source Leakage Current  
µA  
nA  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Total Gate Charge  
IGSS  
VGS = 12V  
Qg  
ID = -15A  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
––– 18  
––– 21  
27  
32  
nC VDS = -10V  
VGS = -4.5V  
––– 13 –––  
––– 20 –––  
––– 230 –––  
––– 160 –––  
––– 7980 –––  
––– 1480 –––  
––– 980 –––  
VDD = -10V ‚  
ID = -1.0A  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
RG = 6.0Ω  
VGS = -4.5V  
Ciss  
Coss  
Crss  
Input Capacitance  
VGS = 0V  
Output Capacitance  
pF  
VDS = -15V  
ƒ = 1.0kHz  
Reverse Transfer Capacitance  
Source-Drain Ratings and Characteristics  
Parameter  
Continuous Source Current  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
D
IS  
MOSFET symbol  
showing the  
–––  
–––  
-2.5  
-60  
–––  
A
G
ISM  
Pulsed Source Current  
(Body Diode)   
integral reverse  
p-n junction diode.  
–––  
S
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
––– ––– -1.2  
––– 120 180  
––– 160 240  
V
TJ = 25°C, IS = -2.5A, VGS = 0V ‚  
ns  
TJ = 25°C, IF = -2.5A  
Qrr  
nC di/dt = -100A/µs ‚  
Notes:  
 Repetitive rating; pulse width limited by  
ƒ Surface mounted on 1 in square Cu board, t ≤ 10sec.  
max. junction temperature.  
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.  
2
www.irf.com  
IRF7425PbF  
1000  
100  
10  
1000  
100  
10  
VGS  
VGS  
TOP  
-7.0V  
-5.0V  
-4.5V  
-2.5V  
-1.8V  
-1.5V  
-1.2V  
TOP  
-7.0V  
-5.0V  
-4.5V  
-2.5V  
-1.8V  
-1.5V  
-1.2V  
BOTTOM-1.0V  
BOTTOM-1.0V  
1
-1.0V  
1
0.1  
0.01  
-1.0V  
20µs PULSE WIDTH  
20µs PULSE WIDTH  
°
T = 150 C  
J
°
T = 25 C  
J
0.1  
0.1  
1
10  
100  
0.1  
1
10  
100  
-V , Drain-to-Source Voltage (V)  
DS  
-V , Drain-to-Source Voltage (V)  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
2.0  
100  
-15A  
=
I
D
°
T = 150 C  
J
1.5  
1.0  
0.5  
0.0  
10  
°
T = 25 C  
J
1
V
= -15V  
DS  
20µs PULSE WIDTH  
V
=-4.5V  
GS  
0.1  
1.0  
1.2  
1.4  
1.6  
1.8 2.0  
2.2  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
°
-V , Gate-to-Source Voltage (V)  
GS  
T , Junction Temperature ( C)  
J
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs. Temperature  
www.irf.com  
3
IRF7425PbF  
12000  
8
6
4
2
0
I
D
=
-15A  
V
= 0V,  
f = 1MHz  
gd , ds  
GS  
C
= C + C  
C
SHORTED  
V
V
=-16V  
=-10V  
iss  
gs  
DS  
DS  
C
= C  
gd  
rss  
10000  
8000  
6000  
4000  
2000  
0
C
= C + C  
ds  
oss  
gd  
C
iss  
C
C
oss  
rss  
0
40  
80  
120  
160  
1
10  
100  
Q
, Total Gate Charge (nC)  
-V , Drain-to-Source Voltage (V)  
DS  
G
Fig 6. Typical Gate Charge Vs.  
Fig 5. Typical Capacitance Vs.  
Gate-to-Source Voltage  
Drain-to-Source Voltage  
1000  
100  
10  
100  
10  
1
OPERATION IN THIS AREA LIMITED  
BY R  
DS(on)  
°
T = 150 C  
J
100us  
1ms  
°
T = 25 C  
J
10ms  
°
T = 25 C  
A
°
T = 150 C  
Single Pulse  
J
V
= 0 V  
GS  
0.1  
0.2  
1
0.1  
0.4  
0.6  
0.8  
1.0  
1
10  
100  
-V ,Source-to-Drain Voltage (V)  
SD  
-V , Drain-to-Source Voltage (V)  
DS  
Fig 8. Maximum Safe Operating Area  
Fig 7. Typical Source-Drain Diode  
Forward Voltage  
4
www.irf.com  
IRF7425PbF  
15  
12  
9
RD  
VDS  
VGS  
D.U.T.  
RG  
-
+
VDD  
VGS  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
6
Fig 10a. Switching Time Test Circuit  
3
t
t
r
t
t
f
d(on)  
d(off)  
V
GS  
10%  
0
25  
50  
75  
100  
125  
150  
°
T , Case Temperature ( C)  
C
90%  
Fig 9. Maximum Drain Current Vs.  
V
DS  
Case Temperature  
Fig 10b. Switching Time Waveforms  
100  
D = 0.50  
0.20  
0.10  
0.05  
10  
0.02  
0.01  
1
0.1  
P
2
DM  
t
1
SINGLE PULSE  
(THERMAL RESPONSE)  
t
2
Notes:  
1. Duty factor D =  
t / t  
1
2. Peak T =P  
J
x Z  
+ T  
thJA A  
DM  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  
www.irf.com  
5
IRF7425PbF  
0.010  
0.009  
0.008  
0.007  
0.006  
0.005  
0.015  
V
= -2.5V  
GS  
0.010  
I
= -15A  
D
V
= -4.5V  
GS  
0.005  
0
10  
20  
30  
40  
50  
60  
1.0  
2.0  
3.0  
4.0  
5.0  
-I , Drain Current (A)  
-V  
Gate -to -Source Voltage (V)  
D
GS,  
Fig 12. Typical On-Resistance Vs.  
Fig 13. Typical On-Resistance Vs.  
Gate Voltage  
Drain Current  
Current Regulator  
Same Type as D.U.T.  
50KΩ  
Q
G
.2µF  
12V  
.3µF  
-
V
+
DS  
Q
Q
GD  
D.U.T.  
GS  
V
GS  
V
G
-3mA  
I
I
D
G
Charge  
Current Sampling Resistors  
Fig 14a. Basic Gate Charge Waveform  
Fig 14b. Gate Charge Test Circuit  
6
www.irf.com  
IRF7425PbF  
3.0  
2.5  
2.0  
1.5  
120  
100  
80  
60  
40  
20  
0
I
= -250µA  
D
-75 -50 -25  
0
25  
50  
75 100 125 150  
0.001  
0.010  
0.100  
1.000  
10.000 100.000  
T , Temperature ( °C )  
Time (sec)  
J
Fig 16. Typical Power Vs. Time  
Fig 15. Typical Vgs(th) Variance Vs.  
Juction Temperature  
www.irf.com  
7
IRF7425PbF  
SO-8 Package Outline  
Dimensions are shown in millimeters (inches)  
SO-8 Part Marking  
8
www.irf.com  
IRF7425PbF  
SO-8 Tape and Reel  
Dimensions are shown in millimeters (inches)  
TERMINAL NUMBER 1  
12.3 ( .484 )  
11.7 ( .461 )  
8.1 ( .318 )  
7.9 ( .312 )  
FEED DIRECTION  
NOTES:  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).  
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
330.00  
(12.992)  
MAX.  
14.40 ( .566 )  
12.40 ( .488 )  
NOTES :  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
Data and specifications subject to change without notice.  
This product has been designed and qualified for the Consumer market.  
Qualification Standards can be found on IR’s Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information. 02/06  
www.irf.com  
9

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