IRF7501 [INFINEON]
Power MOSFET(Vdss=20V, Rds(on)=0.135ohm); 功率MOSFET （ VDSS = 20V ， RDS（ON） = 0.135ohm ）
| 型号： | IRF7501 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=20V, Rds(on)=0.135ohm) |
| 文件： | 总7页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91265H
IRF7501
PRELIMINARY
HEXFET® Power MOSFET
l Generation V Technology
l Ulrtra Low On-Resistance
l Dual N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
1
8
S1
D1
VDSS =20V
2
7
G 1
D 1
3
6
S2
D2
4
5
G 2
D 2
RDS(on) = 0.135Ω
Top V iew
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is
at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable electronics and
PCMCIA cards.
M icro8
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain-Source Voltage
20
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
2.4
1.9
A
19
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
1.25
0.8
W
W
0.01
W/°C
V
VGSM
Gate-to-Source Voltage Single Pulse tp<10µs
Gate-to-Source Voltage
16
VGS
± 12
5.0
V
dv/dt
Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
V/ns
°C
TJ , TSTG
-55 to + 150
240 (1.6mm from case)
Thermal Resistance
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
100
°C/W
All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective
only for product marked with Date Code 505 or later .
www.irf.com
1
4/30/98
IRF7501
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20 ––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.041 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.085 0.135
––– 0.120 0.20
0.70 ––– –––
2.6 ––– –––
––– ––– 1.0
––– ––– 25
––– ––– 100
––– ––– -100
––– 5.3 8.0
––– 0.84 1.3
––– 2.2 3.3
––– 5.7 –––
––– 24 –––
––– 15 –––
––– 16 –––
––– 260 –––
––– 130 –––
––– 61 –––
VGS = 4.5V, ID = 1.7A
VGS = 2.7V, ID = 0.85A
VDS = VGS, ID = 250µA
VDS = 10V, ID = 0.85A
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
VGS = 12V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -12V
Qg
ID = 1.7A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 16V
VGS = 4.5V, See Fig. 9
VDD = 10V
ID = 1.7A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 5.7Ω
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS = 15V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 8
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– ––– 1.25
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 19
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– 1.2
V
TJ = 25°C, IS = 1.7A, VGS = 0V
––– 39
––– 37
59
56
ns
TJ = 25°C, IF = 1.7A
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%
max. junction temperature. ( See fig. 10 )
Surface mounted on FR-4 board, t ≤10sec
ISD ≤ 1.7A, di/dt ≤ 66A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
2
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IRF7501
100
10
100
10
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
TOP
TOP
BOTTOM 1.5V
BOTTOM 1.5V
1
1
1.5V
0.1
0.01
0.1
0.01
1.5V
20µs PULSE W IDTH
= 150°C
20µs PULSE W IDTH
T
T
= 25°C
J
J
A
10
A
10
0.1
1
0.1
1
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
1
100
10
1
TJ = 150°C
T
= 150°C
J
TJ = 25°C
T
= 25°C
J
VDS = 10V
20µs PULSE W ID TH
V
= 0V
G S
1.6
, Source-to-Drain Voltage (V)
A
1.8
0.1
0.1
0.4
4.0A
1.5
2.0
2.5
3.0
3.5
0.6
0.8
1.0
1.2
1.4
V
VG S , G ate-to-Source Voltage (V )
SD
Fig 3. Typical Transfer Characteristics
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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3
IRF7501
2.0
0.8
0.6
0.4
0.2
0.0
I
= 1.7A
D
1.5
1.0
0.5
0.0
V
= 2.5V
G S
V
= 5.0V
G S
V
= 4.5V
G S
A
A
0
2
4
6
-60 -40 -20
0
20
40
60
80 100 120 140 160
I
, Drain Current (A)
T
J
, Junction Tem perature (°C)
D
Fig 6. Typical On-Resistance Vs. Drain
Fig 5. Normalized On-Resistance
Current
Vs.Temperature
0.13
0.11
0.09
0.07
0.05
I
= 2.4A
D
A
2
3
4
5
6
7
8
V
, G ate-to-Source Voltage (V)
G S
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
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IRF7501
10
8
500
400
300
200
100
0
I
V
= 1.7A
= 16V
V
C
C
C
= 0V,
f = 1M Hz
D
DS
GS
iss
= C
+ C
+ C
,
C
SHORTED
gs
gd
ds
= C
= C
rss
oss
gd
ds
gd
C
C
iss
6
oss
4
C
rss
2
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
A
0
2
4
6
8
10
1
10
100
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
G
DS
Fig 9. Typical Gate Charge Vs.
Fig 8. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
t
1
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7501
Micro8 Package Outline
LE AD A S SIG N M EN TS
IN C H ES
M ILLIM E TE R S
D IM
D
M IN
M A X
.044
.008
.014
.007
.120
M IN
0.91
0.10
0.25
0.13
2.95
M AX
1.11
0.20
0.36
0.18
3.05
3
- B
-
6
3
D
D
7
D
6
D
5
D 1 D 1 D 2 D 2
A
.036
.004
.010
.005
.116
A1
B
8
1
8
1
7
6
5
4
8
1
7
5
4
3
C
D
e
S IN G LE
D U AL
H
E
0.25 (.010)
M
A
M
- A
-
2
3
4
2
3
.0256 B A SIC
.0128 B A SIC
0.65 BA S IC
0.33 BA S IC
2
e1
E
S1 G 1 S2 G 2
S
S
S
G
.116
.188
.016
0°
.120
.198
.026
6°
2.95
4.78
0.41
0°
3.05
H
L
5.03
0.66
6°
e
θ
6X
e
1
1
R E C O M M E N D ED FO O T PR IN T
θ
1.04
0.38
8X
A
( .041
8X
)
(
.015
)
- C
B
-
0.10 (.004)
A
C
L
8X
0.08 (.003)
8X
8X
M
C
A
S
B
S
4.24
.167
3.20
( .126
5.28
( .208 )
)
(
)
N O T E S :
1
2
3
D IM E N S IO N IN G A N D TO LE R A N C IN G P E R A N S I Y 14.5M -1982.
C O N TR O LLIN G D IM E N SIO N IN C H .
D IM E N S IO N S D O N O T IN C LU D E M O LD F LA S H .
:
0.65
( .0256
6X
)
Part Marking Information
IRF7501example
6
www.irf.com
IRF7501
Tape & Reel
Dimensions are shown in millimeters (inches)
TER M INAL N UM BER
1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTIO N
N O TES:
1. O U TLIN E C O N FO R M S TO EIA-481 & EIA-541.
2. C O N TRO LLIN G DIM EN SIO N : M IL LIM ETER.
330.00
(12.992)
M AX.
14.40 ( .566 )
12.40 ( .488 )
NO TES :
1. CO NTRO LLING DIMEN SIO N : MILLIM ET ER.
2. O U TLINE C O N FO RM S TO EIA-481 & EIA-541.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
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IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
4/98
www.irf.com
7
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