IRF7704PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF7704PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总9页 (文件大小：198K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 96025
IRF7704PbF
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.1mm)
l Available in Tape & Reel
l Lead-Free
VDSS
-40V
RDS(on) max (mW)
46@VGS = -10V
ID
-4.6A
74@VGS = -4.5V
-3.7A
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
nationalRectifier iswellknownfor,providesthedesigner
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
TSSOP-8
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
-40
Units
V
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-4.6
-3.7
A
-19
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
Power Dissipation
1.5
W
1.0
Linear Derating Factor
12
mW/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
83
Units
°C/W
RθJA
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1
02/06/06
IRF7704PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-40 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.03 ––– V/°C Reference to 25°C, ID = -1mA
––– –––
––– –––
46
74
VGS = -10V, ID = -4.6A
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
VGS = -4.5V, ID = -3.7A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -4.6A
VDS = -32V, VGS = 0V
VDS = -32V, VGS = 0V, TJ = 70°C
VGS = -20V
VGS(th)
gfs
Gate Threshold Voltage
-1.0 ––– -3.0
7.2 ––– –––
––– ––– -10
––– ––– -25
––– ––– -100
––– ––– 100
V
S
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = 20V
Qg
––– 25
––– 10
––– 9.5
38
15
14
ID = -4.6A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -15V
VGS = -4.5V
––– 25 –––
––– 360 –––
––– 190 –––
––– 100 –––
––– 3150 –––
––– 250 –––
––– 200 –––
VDD = -20V
ID = -1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
VGS = -4.5V
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
Output Capacitance
pF
VDS = -25V
ƒ = 1.0kHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
-1.5
-19
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.2
V
TJ = 25°C, IS = -1.5A, VGS = 0V
––– 29
––– 41
44
62
ns
TJ = 25°C, IF = -1.5A
Qrr
nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on 1 in square Cu board
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7704PbF
100
10
1
1000
100
10
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
TOP
TOP
BOTTOM -2.7V
BOTTOM-2.7V
1
-2.70V
0.1
0.01
-2.70V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
0.1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
100.0
4.6A
=
I
D
10.0
1.0
0.1
0.0
1.5
1.0
0.5
0.0
T
= 150°C
J
T
J
= 25°C
V
= -25V
DS
20µs PULSE WIDTH
V
= -10V
GS
2.5
3.0
3.5
4.0
4.5
5.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
T , Junction Temperature ( C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7704PbF
12
10
8
5000
I
D
=
-4.6A
V
= 0V,
f = 1 MHZ
V
V
=-32V
=-20V
GS
DS
DS
C
= C + C
,
C
ds
SHORTED
iss
gs
gd
C
= C
rss
gd
4000
3000
2000
1000
0
C
= C + C
oss
ds
gd
Ciss
6
4
2
Coss
Crss
0
0
10
20
30
40
50
60
1
10
100
Q , Total Gate Charge (nC)
G
-V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 150 C
100µsec
J
1msec
10msec
°
T = 25 C
J
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
0.1
0.1
0.4
0.6
0.8
1.0
1.2
0.1
1
10
100
1000
-V ,Source-to-Drain Voltage (V)
SD
-V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7704PbF
5.0
4.0
3.0
2.0
1.0
0.0
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
T
75
100
125
°
150
, Case Temperature ( C)
C
90%
Fig 9. Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
P
2
DM
1
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7704PbF
0.070
0.060
0.050
0.040
0.030
0.020
0.08
V
= -4.5V
GS
0.06
0.04
0.02
I
= -4.6A
D
V
= -10V
GS
0.0
4.0
8.0
12.0
16.0
0
4
8
12
16
20
-V
Gate -to -Source Voltage (V)
-I , Drain Current (A)
GS,
D
Fig 12. Typical On-Resistance Vs. Drain
Fig 11. Typical On-Resistance Vs. Gate
Current
Voltage
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-
V
+
DS
Q
Q
GD
D.U.T.
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRF7704PbF
3.0
2.5
2.0
1.5
80
60
40
20
0
I
= -250µA
D
0.001
0.010
0.100
1.000
10.000
100.000
-75 -50 -25
0
25
50
75 100 125 150
Time (sec)
T
, Temperature ( °C )
J
Fig 15. Typical Power Vs. Time
Fig 14. Threshold Voltage Vs. Tempera-
ture
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7
IRF7704PbF
TSSOP8 Package Outline
Dimensions are shown in millimeters (inches)
8
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IRF7704PbF
TSSOP8 Part Marking Information
TSSOP-8 Tape and Reel Information
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/06
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9
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