IRF7752GPBF [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | IRF7752GPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢ Power MOSFET |
| 文件： | 总8页 (文件大小：235K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-96151
IRF7752GPbF
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.1mm)
l Available in Tape & Reel
l Lead-Free
VDSS
30V
RDS(on) max
0.030@VGS = 10V
0.036@VGS = 4.5V
ID
4.6A
3.9A
l Halogen-Free
Description
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that Inter-
nationalRectifier iswellknownfor,providesthedesigner
with an extremely efficient and reliable device for use
in battery and load management.
TSSOP-8
TheTSSOP-8package, has45%lessfootprintareaofthe
standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a
premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain- Source Voltage
30
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
4.6
3.7
A
37
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
1.0
W
Power Dissipation
0.64
Linear Derating Factor
8.0
mW/°C
VGS
Gate-to-Source Voltage
± 12
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
125
Units
°C/W
RθJA
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1
05/12/08
IRF7752GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.030 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.030
––– 0.036
0.60 ––– 2.0
12 ––– –––
––– ––– 20
––– ––– 100
––– ––– -200
––– ––– 200
––– 9.0 –––
––– 2.5 –––
––– 2.6 –––
––– 7.2 –––
––– 9.1 –––
––– 25 –––
––– 11 –––
––– 861 –––
––– 210 –––
––– 25 –––
VGS = 10V, ID = 4.6A
GS = 4.5V, ID = 3.9A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
V
VGS(th)
gfs
Gate Threshold Voltage
V
S
VDS = VGS, ID = 250µA
VDS = 10V, ID = 4.6A
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = -12V
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = 12V
Qg
ID = 4.6A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 24V
VGS = 4.5V
VDD = 15V
ID = 1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
VGS = 10V
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
Output Capacitance
pF
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
0.91
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
37
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.3
––– 25 –––
––– 23 –––
V
TJ = 25°C, IS = 0.91A, VGS = 0V
ns
TJ = 25°C, IF = 0.91A
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board, t<10 sec
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRF7752GPbF
100
10
1
100
10
VGS
10.0V
5.0V
4.5V
3.3V
3.0V
2.7V
2.5V
VGS
TOP
TOP
10.0V
5.0V
4.5V
3.3V
3.0V
2.7V
2.5V
BOTTOM 2.3V
BOTTOM 2.3V
2.3V
2.3V
1
0.1
0.01
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
4.6A
=
I
D
1.5
1.0
0.5
0.0
°
T = 150 C
J
10
°
T = 25 C
J
V
= 15V
DS
20µs PULSE WIDTH
V
=10V
GS
1
2.0
2.3
2.7
3.0
3.3 3.7 4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
°
T , Junction Temperature( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7752GPbF
10
8
1400
I
D
= 4.6A
V
= 0V,
f = 1MHz
C
GS
V
V
= 24V
= 15V
DS
DS
C
= C + C
gs
SHORTED
ds
iss
gd ,
C
= C
gd
1200
1000
800
600
400
200
0
rss
C
= C + C
ds
oss
gd
C
iss
6
4
C
C
oss
2
rss
0
1
10
100
0
4
8
12
16
20
V
, Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10
1
10us
100us
1ms
°
T = 25 C
J
1
10ms
°
T = 25 C
J
C
°
T = 150 C
Single Pulse
V
= 0 V
GS
0.1
0.2
0.1
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7752GPbF
5.0
4.0
3.0
2.0
1.0
0.0
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1000
100
10
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7752GPbF
0.080
0.060
0.040
0.030
0.025
0.020
VGS = 4.5V
I
= 4.6A
D
0.020
0.000
VGS = 10V
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0 10.0
0
5
10 15 20 25 30 35 40
, Drain Current ( A )
V
Gate -to -Source Voltage (V)
GS,
I
D
Fig 11. Typical On-Resistance Vs.
Fig 12. Typical On-Resistance Vs.
Gate Voltage
Drain Current
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.2µF
12V
.3µF
10 V
+
Q
Q
GD
GS
V
DS
D.U.T.
-
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRF7752GPbF
TSSOP8 Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
IRF7752GPbF
TSSOP8 Part Marking Information
EXAMPLE: THIS IS AN IRF7752GPbF
F7752G
TSSOP-8 Tape and Reel Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/2008
8
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