IRF7805QPBF_08 [INFINEON]
Advanced Process TechnologyUltra Low On-Resistance; 先进的工艺TechnologyUltra低导通电阻
| 型号： | IRF7805QPBF_08 |
| 厂家： | 
Infineon |
| 描述： | Advanced Process TechnologyUltra Low On-Resistance |
| 文件： | 总5页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD – 96114A
IRF7805QPbF
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Advanced Process Technology
UltraLowOn-Resistance
NChannelMOSFET
SurfaceMount
Available in Tape & Reel
150°COperatingTemperature
Lead-Free
A
D
1
2
3
4
8
7
S
S
D
6
5
S
D
D
G
Description
SO-8
TheseHEXFET® PowerMOSFET'sinpackageutilize
the lastest processing techniques to achieve
extremely low on-resistance per silicon area.
Additional features of these HEXFET Power
MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable
device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics making it ideal in a variety of
power applications. This surface mount SO-8 can
dramaticallyreduceboardspaceandisalsoavailable
in Tape & Reel.
Top View
Device Features
IRF7805Q
30V
VDS
RDS(on)
Qg
11m
Ω
31nC
Qsw
Qoss
11.5nC
36nC
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
30
± 12
13
V
V
GS
I
I
I
@ TA = 25°C
D
D
@ TA = 70°C
10
A
100
2.5
1.6
DM
Power Dissipation
P
P
@TA = 25°C
@TA = 70°C
W
D
D
Power Dissipation
Linear Derating Factor
Operating Junction and
0.02
-55 to + 150
W/°C
°C
T
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
Units
°C/W
RθJL
RθJA
–––
50
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1
08/09/10
IRF7805QPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
VGS = 4.5V, ID = 7.0A
VDS = VGS, ID = 250µA
Drain-to-Source Breakdown Voltage
BVDSS
RDS(on)
VGS(th)
IDSS
30
–––
9.2
–––
–––
–––
–––
–––
–––
22
–––
V
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
1.0
11
Ω
m
3.0
70
V
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
V
V
DS = 30V, VGS = 0V
10
DS = 24V, VGS = 0V
µA
150
100
-100
31
DS = 24V, VGS = 0V, TJ = 100°C
IGSS
Gate-to-Source Forward Leakage
VGS = 12V
VGS = -12V
nA
nC
Gate-to-Source Reverse Leakage
Total Gate Charge
Qg
VGS = 5.0V
Qgs1
Qgs2
Qgd
Qsw
Qoss
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Switch Charge (Qgs2 + Qgd)
Output Charge
3.7
1.4
6.8
8.2
3.0
–––
–––
–––
11.5
3.6
VDS = 16V
ID = 7.0A
nC
VDS = 16V, VGS = 0V
RG
td(on)
tr
Gate Resistance
Turn-On Delay Time
Rise Time
0.5
–––
–––
–––
–––
1.7
–––
–––
–––
–––
Ω
–––
16
V
DD = 16V, VGS = 4.5V
20
38
16
ID = 7.0A
ns
td(off)
tf
Ω
Turn-Off Delay Time
Fall Time
RG= 2
Resistive Load
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
2.5
MOSFET symbol
–––
–––
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
ISM
–––
–––
–––
–––
106
1.2
(Body Diode)
Diode Forward Voltage
p-n junction diode.
T = 25°C, I = 7.0A, V = 0V
J S GS
VSD
Qrr
–––
88
V
Reverse Recovery Charge
di/dt = 700A/µs
= 16V, V = 0V, I = 7.0A
–––
ns
V
DS
GS
S
Qrr(s)
Reverse Recovery Charge
(with Parallel Schottky)
55
di/dt = 700A/µs (with 10BQ040)
–––
–––
nC
V
DS
= 16V, V = 0V, I = 7.0A
GS
S
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Qoss
ꢀ
Rθ is measured at T of approximately 90°C.
Devices are 100% tJested to these parameters.
2
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IRF7805QPbF
Typical Characteristics
Fig 1. Normalized On-Resistance vs. Temperature
Fig 2. Typical Gate Charge vs. Gate-to-Source Voltage
10
°
T = 150 C
J
1
°
T = 25 C
J
V
= 0 V
GS
0.1
0.4
0.5
0.6
0.7
0.8
0.9
V
,Source-to-Drain Voltage (V)
SD
Fig 4. Typical Source-Drain Diode Forward Voltage
Fig 3. Typical Rds(on) vs. Gate-to-Source Voltage
100
D = 0.50
0.20
10
0.10
0.05
0.02
P
2
DM
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
A
DM
thJA
0.1
0.001
0.01
0.1
1
10
100
1000
t , Rectangular Pulse Duration (sec)
1
Figure 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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3
IRF7805QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES
MIN MAX
.0532 .0688
MILLIMETERS
DIM
A
D
B
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040 .0098
b
c
D
E
.013
.0075 .0098
.189 .1968
.020
8
1
7
2
6
3
5
6
H
0.25 [.010]
A
.1497 .1574
.050 BASIC
4
e
1.27 BASIC
0.635 BASIC
e1 .025 BASIC
H
K
L
.2284 .2440
.0099 .0196
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
.016
0°
.050
8°
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING& TOLERANCINGPER ASME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT LINE CONF ORMS T O JE DEC OU T LINE MS -012AA.
5
6
7
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
A = ASSEMBLY SITE CODE
LOT CODE
PART NUMBER
Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
4
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IRF7805QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/2010
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