IRF7811AV [INFINEON]
N-Channel Application-Specific MOSFETs; N沟道特定应用的MOSFET
| 型号： | IRF7811AV |
| 厂家： | 
Infineon |
| 描述： | N-Channel Application-Specific MOSFETs |
| 文件： | 总6页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-94009
IRF7811AV
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
applications
A
A
D
1
2
3
4
8
7
S
S
D
6
5
Description
S
D
D
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge.The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
G
SO-8
Top View
The IRF7811AV has been optimized for all parameters
that are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7811AV offers an extremely low combination of
Qsw & RDS(on) for reduced losses in both control and
synchronous FET applications.
DEVICE CHARACTERISTICSꢀ
IRF7811AV
RDS
QG
11mΩ
17nC
6.7nC
8.1nC
(on)
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
Qsw
Qoss
Absolute Maximum Ratings
Parameter
Symbol
IRF7811AV
Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS ≥ 4.5V)
Pulsed Drain Current
Power Dissipation
VDS
VGS
ID
30
±20
V
TA = 25°C
TL = 90°C
10.8
11.8
100
A
IDM
PD
TA = 25°C
TL = 90°C
2.5
W
3.0
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
TJ,TSTG
IS
–55 to 150
2.5
°C
A
ISM
50
Thermal Resistance
Parameter
Max.
50
20
Units
°C/W
°C/W
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
RθJA
RθJL
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12/13/00
IRF7811AV
Electrical Characteristics
Parameter
Min Typ Max Units
Conditions
Drain-to-Source
Breakdown Voltage
BVDSS
30
–
–
V
mΩ
V
VGS = 0V, ID = 250µA
Static Drain-Source
on Resistance
RDS
11
14
VGS = 4.5V, ID = 15A
(on)
Gate Threshold Voltage
VGS(th)
IDSS
1.0
VDS = VGS,ID = 250µA
VDS = 24V, VGS = 0
Drain-Source Leakage
Current
20
100
µA
nA
VDS = 24V, VGS = 0,
Tj = 100°C
Gate-Source Leakage
Current
IGSS
±100
VGS = ±20V
Total Gate Chg Cont FET
Total Gate Chg Sync FET
QG
17
14
26
21
VGS=5V, ID=15A, VDS=24V
VGS = 5V, VDS< 100mV
VDS = 16V, ID = 15A
QG
Pre-Vth
QGS1
3.4
Gate-Source Charge
Post-Vth
QGS2
1.6
nC
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Qgs2 + Qgd)
Output Charge
QGD
Qsw
Qoss
RG
5.1
6.7
8.1
2.2
8.6
21
12
VDS = 16V, VGS = 0
Gate Resistance
Turn-on Delay Time
Rise Time
Ω
td (on)
tr
VDD = 16V, ID = 15A
VGS = 5V
ns
Turn-off Delay Time
Fall Time
td
43
Clamped Inductive Load
(off)
tf
10
Input Capacitance
Output Capacitance
Ciss
Coss
–
–
–
1801
723
46
–
–
–
pF
VDS = 16V, VGS = 0
Reverse Transfer Capacitance Crss
Source-Drain Rating & Characteristics
Parameter
Min Typ Max Units
Conditions
Diode Forward
Voltage
VSD
Qrr
1.3
V
IS = 15A, VGS = 0V
Reverse Recovery
Charge
50
43
nC
di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IS = 15A
Reverse Recovery
Charge (with Parallel
Schottky)
Qrr(s)
nC
di/dt = 700A/µs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 15A
Notes:
ꢀ
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Qoss
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 15A.
2
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IRF7811AV
6
4
2
0
2.0
1.5
1.0
0.5
0.0
15A
=
D
VDS = 16V
15A
I
I
=
D
V
= 4.5V
GS
-60 -40 -20
0
20
40
60
80 100 120 140 160
0
5
10
15
20
°
( C)
T , Junction Temperature
Q
, Total Gate Charge (nC)
J
G
Figure 2. Gate-to-Source Voltage vs. Typical Gate Charge
Figure 1. Normalized On-Resistance vs. Temperature
0.020
3000
V
C
= 0V, f = 1 MHZ
= C + C , C
GS
iss
I
= 15A
D
SHORTED
gd ds
gs
C
C
= C
0.018
0.016
0.014
0.012
0.010
0.008
2500
2000
1500
1000
500
rss
oss
gd
= C + C
ds
gd
Ciss
Coss
Crss
0
3.0
6.0
9.0
12.0
15.0
1
10
100
V
Gate -to -Source Voltage (V)
V
, Drain-to-Source Voltage (V)
GS,
DS
Figure 3. Typical Rds(on) vs. Gate-to-Source Voltage
Figure 4. Typical Capacitance vs. Drain-to-Source Voltage
100
100
°
T = 150 C
J
°
T = 150 C
J
10
10
°
T = 25 C
J
°
T = 25 C
J
1
1
V
= 15V
DS
20µs PULSE WIDTH
V
= 0 V
GS
0.1
0.1
0.3
0.6
0.9
1.2
1.5
2.0
2.5
V
3.0
3.5
4.0 4.5
5.0
V
,Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
SD
GS
Figure 5. Typical Transfer Characteristics
Figure 6. Typical Source-Drain Diode Forward Voltage
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3
IRF7811AV
100
D = 0.50
0.20
10
0.10
0.05
P
2
DM
0.02
1
0.01
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x
Z
+ T
thJA A
DM
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Rectangular Pulse Duration (sec)
1
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 0
u
8 V
5
u H
S c h o t tk y - 6 A
V D
D
4 5 0
5 0
u
1 6 V z 5 0 0 m
W
R
e p e titi o n r a te :1 0 0 H z
1 2 5 n S
M
i c 4 4 5 2 B M
4 5 0
5 0
O h m s p r o b e
V
ds
90%
10%
V
gs
t d(off)
t r
(v)
t d(on)
t f(v)
Switching Time Waveforms
Figure 8. Clamped Inductive load test diagram and switching waveform
4
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IRF7811AV
SO-8 Package Details
INC HES
M ILLIM ETER S
DIM
D
M IN
M AX
.0688
.0098
.018
M IN
1.35
0.10
0.36
0.19
4.80
3.81
M AX
1.75
0.25
0.46
0.25
4.98
3.99
5
-
7
2
B -
A
.0532
.0040
.014
A1
B
8
1
6
3
5
4
5
H
E
A
C
D
E
.0075
.189
.0098
.196
0 .25 (.01 0)
M
A M
-
-
.150
.157
e
e
.050 BASIC
.025 BASIC
1.27 BASIC
K
x 4 5°
6X
e1
e1
H
K
0.635 BASIC
θ
.2284
.011
0.16
0°
.2440
5.80
0.28
0.41
0°
6.20
0.48
1.27
8°
A
.019
.050
8°
- C
-
0.1 0 (.0 04 )
6
C
8 X
L
8X
L
A 1
B
8 X
θ
0.2 5 (.010 )
M
C A S B S
R E C O M M E N D E D F O O T P R IN T
N O T E S :
0.7 2 (.028
8X
)
1. D IM E N S IO N IN G A N D T O LE R A N C IN G P E R A N S I Y 14 .5M -19 82 .
2. C O N T R O LL IN G D IM E N S IO N : IN C H .
3. D IM E N S IO N S A R E S H O W N IN M IL LIM E T E R S (IN C H E S ).
4. O U TL IN E C O N F O R M S TO JE D E C O U TL IN E M S -01 2A A .
6.46 ( .2 55
)
1.78 (.0 70 )
8X
5
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O TR U S IO N S
M O LD P R O T R U S IO N S N O T TO E XC E E D 0.25 (.0 06 ).
D IM E N S IO N S IS TH E LE N G T H O F LE A D F O R S O LD E R IN G T O
A
S U B S TR A TE ..
6
1 .27
(
.05 0
)
3 X
SO-8 Part Marking
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5
IRF7811AV
SO-8 Tape and Reel
TERM INAL NUM BER
1
12.3
11.7
(
(
.484
.461
)
)
8.1 ( .318
7.9 ( .312
)
)
FEED DIRECTION
N OTES :
1. CO NTRO LLING DIM E NSIO N : M ILLIM ETER .
2. ALL DIM ENS ION S ARE SHO W N IN M ILL IM E TER S(INC HES).
3. OU TL IN E CO N FO RM S TO EIA-481
& EIA-541.
330.00
(12.992)
M AX.
14.40
12.40
(
(
.566
.488
)
)
NOTES
1. CO NTROLLING DIM ENSION : M ILLIMETER.
2. OUTLINE CONFORM S TO EIA-481 EIA-541.
:
&
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/00
6
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