IRF7855 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;
| 型号： | IRF7855 |
| 厂家： | 
Infineon |
| 描述： | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
| 文件： | 总9页 (文件大小：622K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97173A
IRF7855PbF
HEXFET® Power MOSFET
Applications
VDSS
60V
RDS(on) max
ID
12A
l Primary Side Switch in Bridge Topology
in Isolated DC-DC Converters
l Primary Side Switch in Push-Pull
Topology for 18-36Vin Isolated DC-DC
Converters
9.4m @VGS = 10V
:
l Secondary Side Synchronous
Rectification Switch for 15Vout
l Suitable for 48V Non-Isolated
Synchronous Buck DC-DC Applications
A
A
D
1
8
S
2
3
4
7
S
S
D
6
D
5
G
D
Benefits
l Low Gate to Drain Charge to Reduce
SO-8
Top View
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
Max.
60
Units
V
VDS
VGS
Drain-to-Source Voltage
Gate-to-Source Voltage
± 20
12
I
I
I
@ T = 25°C
A
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
D
D
A
@ T = 70°C
A
8.7
97
DM
P
@T = 25°C
A
2.5
W
Maximum Power Dissipation
Linear Derating Factor
D
0.02
W/°C
dv/dt
Peak Diode Recovery dv/dt
Operating Junction and
9.9
V/ns
°C
T
-55 to + 150
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount)
Typ.
–––
Max.
20
Units
°C/W
Rθ
Rθ
JL
–––
50
JA
Notes through are on page 8
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1
05/17/06
IRF7855PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
––– mV/°C Reference to 25°C, ID = 1mA
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
60
–––
–––
V
Breakdown Voltage Temp. Coefficient –––
72
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
3.0
7.4
9.4
4.9
20
VGS = 10V, ID = 12A
mΩ
V
VGS(th)
–––
–––
–––
–––
VDS = VGS, ID = 100µA
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
µA VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
nA VGS = 20V
250
100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– -100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Min. Typ. Max. Units
Conditions
VDS = 25V, ID = 7.2A
ID = 7.2A
gfs
Qg
14
–––
–––
S
Total Gate Charge
–––
–––
–––
–––
–––
–––
–––
26
39
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
6.8
9.6
8.7
13
–––
–––
–––
–––
–––
–––
nC VDS = 30V
VGS = 10V
VDD = 30V
ID = 7.2A
td(off)
tf
Turn-Off Delay Time
Fall Time
16
ns RG = 6.2Ω
VGS = 10V
12
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 1560 –––
VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
440
120
–––
–––
VDS = 25V
pF ƒ = 1.0MHz
––– 1910 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
–––
320
520
–––
–––
VGS = 0V, VDS = 48V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 48V
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
540
7.2
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
I
I
Continuous Source Current
–––
–––
2.3
MOSFET symbol
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
–––
–––
97
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
33
1.3
50
57
V
T = 25°C, I = 7.2A, V = 0V
SD
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 7.2A, VDD = 25V
J F
rr
di/dt = 100A/µs
Q
t
38
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
2
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IRF7855PbF
100
10
100
10
1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
1
4.5V
0.1
0.01
4.5V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 150°C
≤
≤
0.1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
2.0
1.5
1.0
0.5
I
= 12A
D
V
= 10V
GS
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
≤
60µs PULSE WIDTH
0.1
3
4
5
6
7
8
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
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3
IRF7855PbF
10000
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I
= 7.2A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
V
V
V
= 48V
= 30V
= 12V
DS
DS
DS
= C + C
ds
gd
C
iss
1000
C
6.0
oss
4.0
C
rss
2.0
100
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
5
10
15
20
25
30
V
Q , Total Gate Charge (nC)
G
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100µsec
1msec
T
= 150°C
J
T
= 25°C
J
1
0.1
0.01
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
10msec
100
GS
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0
1
10
1000
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7855PbF
12
10
8
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4
Fig 10a. Switching Time Test Circuit
2
V
DS
90%
0
25
50
75
100
125
150
T
, Ambient Temperature (°C)
A
10%
V
GS
Fig 9. Maximum Drain Current vs.
t
t
r
t
t
f
d(on)
d(off)
Ambient Temperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
1
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
6.734 0.027848
0.1
τ
τ
J τJ
τ
AτA
1τ1
τ
τ
2τ2
3τ3
27.268 1.3813
16.003 53
0.01
0.001
0.0001
Ci= τi/Ri
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7855PbF
30
25
20
15
10
5
16
14
I
= 7.2A
D
T
= 125°C
J
12
10
8
T
= 125°C
J
T
= 25°C
J
T
= 25°C
6
J
Vgs = 10V
0
4
4
5
6
7
8
9
10 11 12 13 14 15 16
10 20 30 40 50 60 70 80 90 100
I , Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 12. On-Resistance vs. Drain Current
Fig 13. On-Resistance vs. Gate Voltage
Q
G
VGS
L
VCC
Q
Q
GD
GS
DUT
2400
0
1K
I
V
G
D
TOP
0.41A
0.58A
2000
1600
1200
800
400
0
Charge
BOTTOM 7.2A
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
25
50
75
100
125
150
0.01
Ω
t
p
I
AS
Starting T , Junction Temperature (°C)
J
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
vs. Drain Current
and Waveforms
6
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IRF7855PbF
SO-8 Package Details
SO-8 Part Marking
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7
IRF7855PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
ISD ≤ 7.2A, di/dt ≤ 650A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 21mH,
RG = 25Ω, IAS = 7.2A.
.
When mounted on 1 inch square copper
R is measured at TJ of approximately 90°C.
θ
board, t ≤ 10 sec.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/06
8
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IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
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