IRF830A [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF830A |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 91878D
SMPS MOSFET
IRF830A
HEXFET® Power MOSFET
Applications
VDSS
500V
Rds(on) max
ID
5.0A
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
1.40Ω
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss specified ( See AN 1001)
G D S
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
5.0
3.2
20
A
PD @TC = 25°C
Power Dissipation
74
W
W/°C
V
Linear Derating Factor
0.59
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
5.3
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typical SMPS Topologies:
l Two transistor Forward
l Half Bridge and Full Bridge
Notes through ꢀare on page 8
www.irf.com
1
3/20/03
IRF830A
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
500 ––– –––
––– 0.60 –––
––– ––– 1.4
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 3.0A
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
VGS = 30V
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Ω
2.0
––– 4.5
V
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 3.0A
ID = 5.0A
gfs
2.8 ––– –––
S
Qg
––– ––– 24
––– ––– 6.3
––– ––– 11
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
10 –––
21 –––
21 –––
15 –––
VDD = 250V
ID = 5.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 14Ω
RD = 49Ω,See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 620 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
93 –––
4.3 –––
VDS = 25V
pF
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V ꢀ
––– 886 –––
–––
–––
27 –––
39 –––
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
230
5.0
Units
mJ
EAS
IAR
–––
–––
–––
A
EAR
Repetitive Avalanche Energy
7.4
mJ
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
1.7
Units
RθJC
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
–––
62
°C/W
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
5.0
20
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.5
––– 430 650
––– 1.62 2.4
V
TJ = 25°C, IS = 5.0A, VGS = 0V
ns
TJ = 25°C, IF = 5.0A
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRF830A
100
10
1
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM4.5V
BOTTOM 4.5V
1
4.5V
4.5V
0.1
0.01
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T = 150 C
J
T = 25 C
J
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
2.5
5.0A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 150 C
J
°
T = 25 C
J
1
V
= 50V
DS
V
=10V
GS
20µs PULSE WIDTH
0.1
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5.0
6.0
7.0 8.0
T , Junction Temperature( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRF830A
20
16
12
8
10000
I
D
= 5.0A
VGS = 0V,
f = 1MHz
C
Ciss = Cgs + Cgd
,
SHORTED
V
V
V
= 400V
= 250V
= 100V
ds
DS
DS
DS
Crss = Cgd
Coss = Cds + Cgd
1000
100
10
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
1
0
A
0
4
8
12
16
20
24
1
10
100
1000
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
10
100us
°
T = 150 C
J
1ms
1
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
0.1
0.4
0.6
0.8
1.0
1.2
10
100
1000
10000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRF830A
RD
5.0
4.0
3.0
2.0
1.0
0.0
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRF830A
500
400
300
200
100
0
15V
I
D
TOP
2.2A
3.2A
BOTTOM 5.0A
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
20V
t
0.01Ω
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
790
785
780
775
770
Q
Q
GD
GS
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
A
0.0
1.0
2.0
3.0
4.0
5.0
V
GS
I
, Avalanche Current (A)
av
3mA
I
I
D
G
Current Sampling Resistors
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
Fig 13b. Gate Charge Test Circuit
6
www.irf.com
IRF830A
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
www.irf.com
7
IRF830A
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B -
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LEAD ASSIGNMENTS
1 - GATE
1
2
3
2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY
A
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
LOT CODE 9B1M
IRF1010
9246
9B 1M
DATE CODE
(YYWW)
ASSEMBLY
LOT CODE
YY = YEAR
WW = WEEK
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 18mH
as Coss while VDS is rising from 0 to 80% VDSS
RG = 25Ω, IAS = 5.0A. (See Figure 12)
ISD ≤ 5.0A, di/dt ≤ 370A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 3/03
8
www.irf.com
相关型号：
©2020 ICPDF网 联系我们和版权申明