IRF8788PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF8788PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总9页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97137A
IRF8788PbF
HEXFET® Power MOSFET
Applications
l
Synchronous MOSFET for Notebook
Processor Power
VDSS
RDS(on) max
Qg
30V 2.8m @V = 10V 44nC
:
l
Synchronous Rectifier MOSFET for
Isolated DC-DC Converters
GS
Benefits
A
A
D
1
l
l
l
l
Very Low Gate Charge
8
S
S
S
G
Very Low RDS(on) at 4.5V VGS
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
and Current
2
3
4
7
6
5
D
D
D
l
l
l
20V VGS Max. Gate Rating
100% tested for Rg
SO-8
Top View
Lead-Free
Description
The IRF8788PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry
standard SO-8 package. The IRF8788PbF has been optimized for parameters that are critical in
synchronous buck operation including Rds(on) and gate charge to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
30
Units
VDS
V
V
Gate-to-Source Voltage
±20
24
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
@ TA = 25°C
D
D
@ TA = 70°C
19
A
190
2.5
1.6
DM
P
P
@TA = 25°C
@TA = 70°C
Power Dissipation
Power Dissipation
D
D
W
Linear Derating Factor
Operating Junction and
0.02
-55 to + 150
W/°C
°C
T
T
J
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
Units
Rθ
Rθ
JL
°C/W
–––
50
JA
Notes through ꢀare on page 9
www.irf.com
1
8/18/08
IRF8788PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250μA
BVDSS
V
ΔΒVDSS/ΔTJ
RDS(on)
Breakdown Voltage Temp. Coefficient ––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance
–––
–––
2.3
2.8
3.8
V
V
V
GS = 10V, ID = 24A
GS = 4.5V, ID = 19A
DS = VGS, ID = 100μA
mΩ
3.04
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
1.35 1.80 2.35
V
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– -6.59 ––– mV/°C
–––
–––
–––
–––
95
–––
–––
–––
1.0
150
100
VDS = 24V, VGS = 0V
μA
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
V
V
V
GS = 20V
nA
S
––– -100
GS = -20V
gfs
–––
44
–––
66
DS = 15V, ID = 19A
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
Rg
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
12
–––
–––
–––
–––
–––
–––
V
DS = 15V
4.7
14
VGS = 4.5V
D = 19A
See Figs. 17a & 17b
nC
I
13.3
18.7
22
nC
VDS = 16V, VGS = 0V
Gate Resistance
0.54 1.09
Ω
td(on)
tr
td(off)
tf
Turn-On Delay Time
23
24
23
11
–––
–––
–––
–––
VDD = 15V, VGS = 4.5V
D = 19A
Rise Time
I
ns
RG = 1.8Ω
Turn-Off Delay Time
See Fig. 15a & 15b
VGS = 0V
Fall Time
Ciss
Coss
Crss
Input Capacitance
––– 5720 –––
pF
Output Capacitance
–––
–––
980
450
–––
–––
V
DS = 15V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
–––
Max.
Units
mJ
EAS
IAR
230
19
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
–––
–––
MOSFET symbol
3.1
A
(Body Diode)
showing the
G
ISM
Pulsed Source Current
–––
–––
integral reverse
190
A
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
–––
–––
–––
–––
24
1.0
0.75
36
V
V
T = 25°C, I = 19A, V = 0V
J S GS
T = 25°C, I = 2.2A, V = 0V
J
S
GS
trr
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 19A, VDD = 15V
J F
Qrr
ton
2
33
50
nC di/dt = 230A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
IRF8788PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
BOTTOM
BOTTOM
1
≤60μs PULSE WIDTH
0.1
0.01
Tj = 25°C
2.3V
2.3V
V
≤60μs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
0.1
1
10
100
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
100
10
2.0
1.5
1.0
0.5
V
= 15V
I
= 24A
DS
60μs PULSE WIDTH
D
V
= 10V
≤
GS
T
= 150°C
J
T
= 25°C
J
1
0.1
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
1
2
3
4
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
vs. Temperature
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3
IRF8788PbF
100000
16
12
8
V
C
= 0V,
f = 1 MHZ
GS
I = 19A
D
= C + C , C SHORTED
iss
gs gd ds
C
= C
V
V
= 24V
= 15V
rss
gd
DS
DS
C
= C + C
ds gd
oss
10000
1000
100
C
C
iss
oss
4
C
rss
0
0
20
40
60
80
100
120
1
10
, Drain-to-Source Voltage (V)
100
Q , Total Gate Charge (nC)
g
V
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-SourceVoltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100μsec
T
= 150°C
J
1msec
T
= 25°C
J
1
10msec
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
1.0
0
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF8788PbF
2.5
2.0
1.5
1.0
24
20
16
12
8
I
= 250μA
D
I
= 100μA
D
4
0
25
50
T
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
, Ambient Temperature (°C)
T
, Temperature ( °C )
A
J
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
AmbientTemperature
100
10
D = 0.50
0.20
0.10
0.05
τι (sec)
0.000057
0.000286
0.000375
0.001902
0.004544
0.013931
0.038563
2.069546
Ri (°C/W)
0.0141064
0.0210000
0.2184000
0.8204000
4.7558194
0.4648000
28.9076170
15.1191958
R1
R1
R2
R2
R3
R3
R4
R4
R5
R5
R6
R6
R7
R7
R8
R8
0.02
0.01
1
τJ
τJ
τ1
τa
τ2
τ6
τ7
τ8
τ3
τ4
τ5
τ1
τ2
τ6
τ7
τ8
τ3
τ4
τ5
0.1
Ci= τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF8788PbF
1000
800
600
400
200
0
7
6
5
4
3
2
I
= 19A
I
D
D
TOP
6.4A
7.4A
19A
BOTTOM
T
= 125°C
= 25°C
J
T
J
2.0
4.0
6.0
8.0
10.0
25
50
75
100
125
150
V
, Gate-to-Source Voltage (V)
GS
Starting T , Junction Temperature (°C)
J
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy
vs. Drain Current
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
0.01
Ω
t
p
I
AS
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
V
DS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
VGS
10%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
6
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IRF8788PbF
Driver Gate Drive
P.W.
P.W.
D =
Period
D.U.T
Period
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 17a. Gate Charge Test Circuit
Fig 17b. Gate Charge Waveform
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7
IRF8788PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
INCHES
MILLIME T E RS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
D
E
.013
8
1
7
2
6
3
5
4
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
e
.050 B AS IC
1.27 B AS IC
e 1 .025 B AS IC
0.635 B AS IC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
F OOT PRINT
8X 0.72 [.028]
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TOJEDEC OUTLINE MS-012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
P = DISGNATES LEAD - FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW= WEEK
A= ASSEMBLY SITE CODE
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
www.irf.com
IRF8788PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.25mH, RG = 25Ω, IAS = 19A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
ꢀR is measured at TJ of approximately 90°C.
θ
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/08
www.irf.com
9
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