IRF9Z24N [INFINEON]
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A); 功率MOSFET ( VDSS = -55V , RDS(ON) = 0.175ohm ,ID = -12A )型号: | IRF9Z24N |
厂家: | Infineon |
描述: | Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) |
文件: | 总8页 (文件大小:110K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD -9.1484B
IRF9Z24N
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
D
VDSS = -55V
RDS(on) = 0.175Ω
l P-Channel
G
l Fully Avalanche Rated
ID = -12A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrialapplicationsatpowerdissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
-12
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-8.5
A
-48
PD @TC = 25°C
Power Dissipation
45
W
W/°C
V
Linear Derating Factor
0.30
± 20
96
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
-7.2
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
4.5
mJ
V/ns
-5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RθJC
RθCS
RθJA
3.3
–––
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
8/27/97
IRF9Z24N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-55 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.05 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 0.175
Ω
V
S
VGS = -10V, ID = -7.2A
VDS = VGS, ID = -250µA
VDS = -25V, ID = -7.2A
VDS = -55V, VGS = 0V
VDS = -44V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
-2.0 ––– -4.0
2.5 ––– –––
Forward Transconductance
––– ––– -25
––– ––– -250
––– ––– 100
––– ––– -100
––– ––– 19
––– ––– 5.1
––– ––– 10
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = -7.2A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -44V
VGS = -10V, See Fig. 6 and 13
–––
–––
–––
–––
13 –––
55 –––
23 –––
37 –––
VDD = -28V
ID = -7.2A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 24Ω
RD = 3.7Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
D
4.5
7.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
nH
pF
G
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 350 –––
––– 170 –––
Output Capacitance
VDS = -25V
Reverse Transfer Capacitance
–––
92 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
-12
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– -48
––– ––– -1.6
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
V
TJ = 25°C, IS = -7.2A, VGS = 0V
––– 47
––– 84 130
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
71
ns
TJ = 25°C, IF = -7.2A
Qrr
ton
µC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
ISD ≤ -7.2A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 3.7mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = -7.2A. (See Figure 12)
IRF9Z24N
1 0 0
1 0
1
100
10
1
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
20µs PULS E W IDTH
= 25°C
TOP
TOP
T
Jc
BOTT OM - 4. 5V
BOTT OM - 4. 5V
20µs PULSE W IDTH
-4.5V
-4.5V
T
= 175°C
J
C
A
A
0. 1
1
1 0
1 0 0
0.1
1
10
100
-V
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
D S
D S
Fig 1. Typical Output Characteristics,
Fig 2. Typical Output Characteristics,
2. 0
1. 5
1. 0
0. 5
0. 0
1 0 0
I
= -12A
D
T
J
= 25°C
T
= 175°C
1 0
J
V
= -2 5V
DS
V
= -10V
GS
20µs P ULS E W IDTH
1
A
1 0 A
- 6 0 - 4 0 - 2 0
0
2 0
4 0
6 0
8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
4
5
6
7
8
9
TJ , Junction Temperature (°C)
-VG S , Ga te-to-So urce Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF9Z24N
20
16
12
8
700
I
= -7.2A
D
V
C
C
C
= 0V ,
f = 1MH z
GS
iss
= C
= C
= C
+ C
+ C
,
C
ds
SHORTED
gs
g d
ds
g d
V
V
= -44V
= -28V
600
500
400
300
200
100
0
rss
oss
DS
DS
gd
C
C
is s
o s s
C
rs s
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
0
5
10
15
20
25
1
10
100
VD S , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1 0 0
1 0
1
100
10
1
OPERATION IN THIS AREA LIM ITED
BY R
D S(o n)
1 0µs
T
= 150°C
J
T
= 25°C
J
100µs
1m s
T
T
= 25°C
= 175°C
Single Pulse
C
J
V
= 0V
GS
10m s
0. 1
A
A
0. 4
0. 6
0. 8
1. 0
1. 2
1. 4
1. 6
1. 8
1
10
100
-V
, Drain-to-Source Voltage (V)
-VSD , Source-to-Drain Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRF9Z24N
1 2
RD
VDS
VGS
D.U.T.
9
RG
-
+
VDD
-10V
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
3
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0
A
1 7 5
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
TC , Case Temperature (°C)
90%
Fig 9. Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 10b. Switching Time Waveforms
1 0
D
=
0 .5 0
0 .2 0
1
0 .1 0
0 .0 5
P
0 .0 2
0 .0 1
DM
0. 1
t
S IN G LE P U L S E
(T H E R M A L R E S P O N S E )
1
t
2
Notes:
1. D uty factor D
=
t
/ t
1
2
2. Pea k T = P
x Z
+ T
C
DM
J
th JC
A
0 . 0 1
0 . 0 0 0 0 1
0 . 0 0 0 1
0 . 0 0 1
0 . 0 1
0. 1
1
t1 , Rectan gular Pulse Duratio n (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRF9Z24N
250
200
150
100
50
L
V
I
D
-2.9A
-5.1A
D S
TOP
R
D .U .T
AS
B OTTOM -7.2A
G
V
D D
A
I
D R IVER
-20V
0 .0 1
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
0
A
175
25
50
75
100
125
150
I
AS
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-10V
-
V
+
DS
Q
Q
GD
D.U.T.
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRF9Z24N
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
-
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
[
] ***
V
=10V
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
[
[
]
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
]
I
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
IRF9Z24N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
1 0.5 4 (.41 5)
1 0.2 9 (.40 5)
-
B
-
3.78 (.14 9)
3.54 (.13 9)
2 .87 ( .1 13 )
2 .62 ( .1 03 )
4 .69 ( .1 85 )
4 .20 ( .1 65 )
1 .3 2 (.0 52 )
1 .2 2 (.0 48 )
-
A
-
6.4 7 (.25 5)
6.1 0 (.24 0)
4
1 5.24 ( .6 0 0)
1 4.84 ( .5 8 4)
1.15 ( .0 4 5)
L E A D
A
S
S
IG N M E N T S
M IN
1
2
3
4
-
-
-
-
G A T E
1
2
3
D R A IN
U R C E
D R A IN
S
O
1 4.09 (.5 5 5)
1 3.47 (.5 3 0)
4.0 6 (.16 0)
3.5 5 (.14 0)
0 .93 ( .0 37 )
0 .69 ( .0 27 )
0.5 5 (.02 2)
0.4 6 (.01 8)
3X
3X
1 .4 0 (.05 5 )
1 .1 5 (.04 5 )
3 X
0 .3 6 (.01 4)
M
B
A
M
2 .9 2 (.11 5 )
2 .6 4 (.10 4 )
2 .54 ( .1 00 )
2X
N O T E
S :
1
2
D IM E N S IO N IN G
C O N T R O L LIN G
&
T O L E R A N C IN G
P
E R
A
N S
I
Y
14 .5 M , 1 98 2.
3
O
U T L IN E C O N F O R M S T O J E D E
C
O U T LIN E T O -2 20 A B .
N O IN C L U D E B U R R S .
D
IM E N S IO IN C H
N
:
4
H E A T S IN L E A D E A U R E M E N T S
K
&
M
S
D
O
T
Part Marking Information
TO-220AB
EXAM PLE : THIS IS AN IRF1010
A
W ITH ASSEMBLY
INTERNATIONAL
PART NUM BER
LOT CODE 9B1M
RECTIFIER
IRF1010
LOGO
9246
9B
1M
DATE CODE
ASSEM BLY
LOT CODE
(YYW W )
YY
=
YEAR
W W
= W EEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
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