IRFB17N60K [INFINEON]
SMPS MOSFET; 开关电源MOSFET
| 型号： | IRFB17N60K |
| 厂家： | 
Infineon |
| 描述： | SMPS MOSFET |
| 文件： | 总8页 (文件大小：518K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94578
IRFB17N60K
SMPS MOSFET
HEXFET® Power MOSFET
Applications
VDSS
600V
RDS(on) typ.
ID
17A
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency
Circuits
0.35Ω
Benefits
l Smaller TO-220 Package
l Low Gate Charge Qg results in Simple Drive Requirement
l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness
l Fully Characterized Capacitance and Avalanche Voltage
and Current
TO-220AB
Absolute Maximum Ratings
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Max.
17
11
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
A
68
PD @TC = 25°C
Power Dissipation
340
2.7
W
W/°C
V
Linear Derating Factor
VGS
dv/dt
TJ
Gate-to-Source Voltage
30
Peak Diode Recovery dv/dt
Operating Junction and
11
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
300
10
°C
N
Mounting Torque, 6-32 or M3 screw
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Typ.
Max.
330
17
Units
mJ
–––
–––
–––
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy
34
mJ
Thermal Resistance
Symbol
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.37
–––
58
Units
RθJC
RθCS
RθJA
°C/W
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1
11/19/02
IRFB17N60K
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
600 ––– –––
Conditions
VGS = 0V, ID = 250µA
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.60 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– 0.35 0.42
3.0 ––– 5.0
Ω
V
VGS = 10V, ID = 10A
VDS = VGS, ID = 250µA
––– ––– 50
––– ––– 250
––– ––– 100
––– ––– -100
µA
VDS = 600V, VGS = 0V
IDSS
IGSS
Drain-to-Source Leakage Current
µA VDS = 480V, VGS = 0V, TJ = 125°C
GS = 30V
VGS = -30V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
nA
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 10A
ID = 17A
5.9 ––– –––
S
Qg
––– ––– 99
––– ––– 32
––– ––– 47
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 480V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
25 –––
82 –––
38 –––
32 –––
VDD = 300V
ID = 17A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 7.5Ω
VGS = 10V,See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 2700 –––
––– 240 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
––– 2950 –––
––– 67 –––
––– 120 –––
21 –––
pF
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 480V ꢀ
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
17
68
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.5
––– 520 780
V
TJ = 25°C, IS = 17A, VGS = 0V
TJ = 25°C, IF = 17A
ns
Qrr
trr
––– 5620 8430 nC
––– 580 870 ns
––– 6470 9700 nC
di/dt = 100A/µs
TJ = 125°C, IF = 17A
di/dt = 100A/µs
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ISD ≤ 17A, di/dt ≤ 380A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Starting TJ = 25°C, L = 2.3mH, RG = 25Ω,
IAS = 17A,
2
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IRFB17N60K
1000
100
10
100
10
1
VGS
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
VGS
15V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
TOP
TOP
BOTTOM 5.5V
BOTTOM 5.5V
5.5V
1
0.1
0.01
5.5V
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.0
10.0
1.0
3.0
I
= 17A
D
V
= 10V
GS
2.5
2.0
1.5
1.0
0.5
0.0
T
= 150°C
J
T
= 25°C
J
0.1
V
= 100V
DS
20µs PULSE WIDTH
0.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
, Junction Temperature (°C)
GS
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRFB17N60K
100000
20
16
12
8
V
C
= 0V,
f = 1 MHZ
GS
I = 17A
D
= C + C , C SHORTED
iss
gs
= C
gd
ds
V
= 480V
C
DS
rss
gd
10000
1000
100
10
VDS= 300V
VDS= 120V
C
= C + C
oss
ds gd
Ciss
Coss
Crss
4
0
1
0
20
40
60
80
100
1
10
100
1000
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
10.0
1.0
T
= 150°C
J
100µsec
1
1msec
T
= 25°C
J
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
10msec
GS
0.1
0.1
0.0
0.5
1.0
1.5
1
10
100
1000
10000
V
, Source-toDrain Voltage (V)
V
, Drain-toSource Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFB17N60K
RD
18
16
14
12
10
8
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
4
V
DS
2
90%
0
25
50
75
100
125
150
T
, Junction Temperature (°C)
J
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFB17N60K
600
500
400
300
200
100
0
I
D
7.6A
11A
17A
TOP
15V
BOTTOM
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
Fig 12c. Unclamped Inductive Test Circuit
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 12a. Maximum Avalanche Energy
V
(BR)DSS
Vs. Drain Current
t
p
I
AS
Fig 12d. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.2µF
12V
VGS
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
V
GS
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Basic Gate Charge Waveform
Fig 13a. Gate Charge Test Circuit
6
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IRFB17N60K
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFB17N60K
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
- B -
3.78 (.149)
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LEAD ASSIGNMENTS
1 - GATE
1
2
3
2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY
A
INTERNATIONAL
PART NUMBER
LOT CODE 9B1M
RECTIFIER
IRF1010
9246
LOGO
9B 1M
DATE CODE
(YYWW)
ASSEMBLY
LOT CODE
YY = YEAR
WW = WEEK
TO-220AB package is not recommended for Surface Mount Application
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/02
8
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