IRFB4233PBF [INFINEON]
Energy Recovery & Pass switch applications in Plasma Display Panels; 能量回收和旁路开关应用在等离子显示面板
| 型号： | IRFB4233PBF |
| 厂家： | 
Infineon |
| 描述： | Energy Recovery & Pass switch applications in Plasma Display Panels |
| 文件： | 总8页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97004
IRFB4233PbF
PDP SWITCH
Features
Key Parameters
l
Advanced process technology
VDS min
230
276
31
V
V
l
Key parameters optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
Low EPULSE rating to reduce power dissipation
in PDP Sustain, Energy Recovery and Pass
Switch Applications
VDS (Avalanche) typ.
RDS(ON) typ. @ 10V
l
m:
I
RP max @ TC= 100°C
114
175
A
TJ max
°C
l
l
Low QG for fast response
High repetitive peak current capability for
reliable operation
D
l
Short fall & rise times for fast switching
175°C operating junction temperature for
improved ruggedness
l
l
Repetitive avalanche capability for robustness
G
and reliability
S
TO-220AB
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applicationsinPlasmaDisplayPanels. ThisMOSFETutilizesthelatestprocessingtechniquestoachieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Max.
±30
Parameter
Gate-to-Source Voltage
Units
VGS
V
A
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
56
39
220
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
114
Repetitive Peak Current g
Power Dissipation
370
W
190
Power Dissipation
2.5
Linear Derating Factor
W/°C
°C
TJ
-40 to + 175
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
300
10lbxin (1.1Nxm)
N
Thermal Resistance
Parameter
Junction-to-Case f
Typ.
Max.
0.402
–––
Units
RθJC
RθCS
RθJA
–––
0.50
–––
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient f
°C/W
62
Notes through are on page 8
www.irf.com
1
6/8/05
IRFB4233PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, I = 1mA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
230
–––
–––
3.0
–––
200
31
–––
V
∆ΒVDSS/∆TJ
RDS(on)
––– mV/°C
D
VGS = 10V, ID = 28A e
mΩ
37
VDS = VGS, ID = 250µA
VGS(th)
–––
-14
–––
–––
–––
–––
–––
120
44
5.0
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
83
––– mV/°C
VDS = 184V, VGS = 0V
5.0
150
100
-100
–––
170
–––
–––
µA
nA
V
V
V
V
V
DS = 184V, VGS = 0V, TJ = 125°C
GS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
GS = -20V
DS = 25V, ID = 39A
gfs
Qg
Qgd
tst
S
DD = 115V, ID = 39A, VGS = 10Ve
–––
–––
100
nC
Gate-to-Drain Charge
VDD = 184V, VGS = 15V, RG= 4.7Ω
L = 220nH, C= 0.4µF, VGS = 15V
VDS = 184V, RG= 4.7Ω, TJ = 25°C
L = 220nH, C= 0.4µF, VGS = 15V
Shoot Through Blocking Time
–––
ns
µJ
–––
–––
460
970
–––
–––
EPULSE
Energy per Pulse
VDS = 184V, RG= 4.7Ω, TJ = 100°C
VGS = 0V
Ciss
Input Capacitance
––– 5510 –––
VDS = 25V
Coss
Crss
Output Capacitance
–––
–––
–––
–––
480
220
340
4.5
–––
–––
–––
–––
pF
ƒ = 1.0MHz,
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
VGS = 0V, VDS = 0V to 184V
Coss eff.
LD
Between lead,
D
S
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
Avalanche Characteristics
Typ.
–––
–––
276
–––
Max.
250
39
Parameter
Units
mJ
mJ
V
EAS
Single Pulse Avalanche Energyd
Repetitive Avalanche Energy c
Repetitive Avalanche Voltageꢀc
Avalanche Currentꢀd
EAR
VDS(Avalanche)
IAS
–––
39
A
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
IS @ TC = 25°C
MOSFET symbol
showing the
Continuous Source Current
(Body Diode)
–––
–––
56
A
ISM
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)ꢀc
–––
–––
220
TJ = 25°C, IS = 39A, VGS = 0V e
TJ = 25°C, IF = 39A, VDD = 50V
di/dt = 100A/µs e
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
190
1.0
V
280
ns
nC
Qrr
760 1140
2
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IRFB4233PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.3V
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.3V
TOP
TOP
BOTTOM
BOTTOM
1
5.3V
0.1
0.01
5.3V
≤ 60µs PULSE WIDTH
Tj = 175°C
≤ 60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
4.0
3.0
2.0
1.0
0.0
I
= 39A
D
V
= 10V
GS
100.00
10.00
1.00
T
= 175°C
J
T
= 25°C
J
0.10
V
= 25V
DS
≤ 60µs PULSE WIDTH
0.01
3.0
4.0
V
5.0
6.0
7.0
8.0
9.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
, Gate-to-Source Voltage (V)
GS
T
, Junction Temperature (°C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
900
1000
L = 220nH
C = 0.4µF
L = 220nH
C = Variable
800
100°C
25°C
100°C
25°C
800
700
600
600
500
400
300
200
400
200
0
130
140
V
150
160
170
180
190
120
130
140
150
160
170
180
Drain-to -Source Voltage (V)
I
Peak Drain Current (A)
DS,
D,
Fig 6. Typical EPULSE vs. Drain Current
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
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3
IRFB4233PbF
1200
1000.0
100.0
10.0
1.0
L = 220nH
1000
C= 0.4µF
C= 0.3µF
T
= 175°C
J
C= 0.2µF
800
600
400
200
0
T
= 25°C
J
V
= 0V
GS
1.0
0.1
25
50
75
100
125
150
0.2
0.4
0.6
0.8
1.2
Temperature (°C)
V
, Source-to-Drain Voltage (V)
SD
Fig 7. Typical EPULSE vs.Temperature
Fig 8. Typical Source-Drain Diode Forward Voltage
10000
8000
6000
4000
2000
0
20
V
C
= 0V,
f = 1 MHZ
GS
I = 39A
D
= C + C , C SHORTED
iss
gs
gd ds
V
= 184V
C
= C
DS
rss
gd
16
12
8
VDS= 115V
VDS= 46V
C
= C + C
ds
oss
gd
Ciss
4
Coss
Crss
0
0
40
80
120
160
200
1
10
100
1000
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
1000
60
50
40
30
20
10
0
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
1µsec
100
10
1
10µsec
100µsec
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
25
50
75
100
125
150
175
1
10
100
1000
V
, Drain-to-Source Voltage (V)
T
, CaseTemperature (°C)
DS
C
Fig 12. Maximum Safe Operating Area
Fig 11. Maximum Drain Current vs. Case Temperature
4
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IRFB4233PbF
1200
1000
800
600
400
200
0
0.16
0.12
0.08
0.04
0.00
I
I
= 39A
D
D
TOP
13A
18A
39A
BOTTOM
T
= 125°C
= 25°C
J
T
J
4
6
8
10
12
14
16
25
50
75
100
125
150
175
V
, Gate-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
GS
J
Fig 13. On-Resistance Vs. Gate Voltage
Fig 14. Maximum Avalanche Energy Vs. Temperature
180
5.5
5.0
4.5
ton= 1µs
Duty cycle = 0.25
160
Half Sine Wave
Square Pulse
140
120
100
80
60
40
20
0
I
= 250µA
D
4.0
3.5
3.0
2.5
2.0
1.5
25
50
75
100
125
150
175
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
Case Temperature (°C)
T
J
Fig 16. Typical Repetitive peak Current vs.
Fig 15. Threshold Voltage vs. Temperature
Case temperature
1
D = 0.50
0.1
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
0.05443 0.000069
0.01
0.001
0.02
0.01
τ
JτJ
τ
τ
Cτ
τ
1τ1
τ
2 τ2
3τ3
0.12807 0.001767
0.21933 0.02082
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFB4233PbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• di/dt controlled by RG
RG
+
-
Body Diode
Inductor Current
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
0.01Ω
t
p
I
AS
Fig 19b. Unclamped Inductive Waveforms
Fig 19a. Unclamped Inductive Test Circuit
Id
Vds
Vgs
L
VCC
DUT
Vgs(th)
0
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 20a. Gate Charge Test Circuit
Fig 20b. Gate Charge Waveform
6
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IRFB4233PbF
Fig 21b. tst Test Waveforms
Fig 21a. tst and EPULSE Test Circuit
Fig 21c. EPULSE Test Waveforms
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7
IRFB4233PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
EXAMPLE: T HIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
AS S EMBLED ON WW 19, 1997
IN THE AS S EMBLY LINE "C"
INT ERNAT IONAL
RECTIFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DAT E CODE
YEAR 7 = 1997
WEEK 19
AS S EMBLY
LOT CODE
LINE C
TO-220AB packages are not recommended for Surface Mount Application.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.34mH, RG = 25Ω, IAS = 39A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢁ Half sine wave with duty cycle = 0.25, ton=1µsec.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/05
8
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