IRFB4332PBF [INFINEON]
PDP SWITCH; PDP开关
| 型号： | IRFB4332PBF |
| 厂家： | 
Infineon |
| 描述： | PDP SWITCH |
| 文件： | 总8页 (文件大小：310K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97099
IRFB4332PbF
PDP SWITCH
Features
Key Parameters
l
Advanced Process Technology
VDS min
DS (Avalanche) typ.
DS(ON) typ. @ 10V
RP max @ TC= 100°C
250
300
29
V
V
m:
A
l
Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for
Reliable Operation
V
l
R
I
120
175
TJ max
°C
l
l
D
D
l
Short Fall & Rise Times for Fast Switching
175°C Operating Junction Temperature for
Improved Ruggedness
l
G
S
l
Repetitive Avalanche Capability for Robustness
and Reliability
D
G
S
TO-220AB
G
D
S
Gate
Drain
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applicationsinPlasmaDisplayPanels. ThisMOSFETutilizesthelatestprocessingtechniquestoachieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Max.
±30
Parameter
Gate-to-Source Voltage
Units
V
A
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current c
60
42
230
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
120
Repetitive Peak Current g
Power Dissipation
390
W
200
Power Dissipation
2.6
Linear Derating Factor
W/°C
°C
TJ
-40 to + 175
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
300
10lbxin (1.1Nxm)
N
Thermal Resistance
Parameter
Junction-to-Case f
Typ.
Max.
0.38
–––
62
Units
RθJC
RθCS
RθJA
–––
0.50
–––
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient f
°C/W
Notes through ꢀare on page 8
www.irf.com
1
6/5/06
IRFB4332PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, I = 1mA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
250
–––
–––
3.0
–––
170
29
–––
V
∆ΒVDSS/∆TJ
RDS(on)
––– mV/°C
D
VGS = 10V, ID = 35A e
33
mΩ
V
VDS = VGS, ID = 250µA
VGS(th)
–––
-14
–––
–––
–––
–––
–––
99
5.0
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
100
–––
–––
100
––– mV/°C
VDS = 250V, VGS = 0V
20
1.0
µA
mA
nA
V
V
V
V
V
DS = 250V, VGS = 0V, TJ = 125°C
GS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
-100
–––
150
–––
–––
GS = -20V
DS = 25V, ID = 35A
gfs
Qg
Qgd
tst
S
DD = 125V, ID = 35A, VGS = 10Ve
nC
Gate-to-Drain Charge
35
VDD = 200V, VGS = 15V, RG= 4.7Ω
Shoot Through Blocking Time
–––
ns
µJ
L = 220nH, C= 0.3µF, VGS = 15V
VDS = 200V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.3µF, VGS = 15V
–––
–––
520
920
–––
–––
EPULSE
Energy per Pulse
VDS = 200V, RG= 5.1Ω, TJ = 100°C
VGS = 0V
Ciss
Input Capacitance
––– 5860 –––
VDS = 25V
Coss
Crss
Output Capacitance
–––
–––
–––
–––
530
130
360
4.5
–––
–––
–––
–––
pF
ƒ = 1.0MHz,
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
VGS = 0V, VDS = 0V to 200V
Coss eff.
LD
Between lead,
D
S
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
Avalanche Characteristics
Typ.
–––
–––
300
–––
Max.
230
39
Parameter
Units
mJ
mJ
V
EAS
Single Pulse Avalanche Energyd
Repetitive Avalanche Energy c
Repetitive Avalanche Voltageꢀc
Avalanche Currentꢀd
EAR
VDS(Avalanche)
IAS
–––
35
A
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
IS @ TC = 25°C
MOSFET symbol
showing the
Continuous Source Current
(Body Diode)
–––
–––
60
A
ISM
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)ꢀc
–––
–––
230
TJ = 25°C, IS = 35A, VGS = 0V e
TJ = 25°C, IF = 35A, VDD = 50V
di/dt = 100A/µs e
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
190
1.3
V
290
ns
nC
Qrr
820 1230
2
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IRFB4332PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
TOP
TOP
BOTTOM
BOTTOM
5.5V
5.5V
≤ 60µs PULSE WIDTH
Tj = 25°C
≤ 60µs PULSE WIDTH
Tj = 175°C
1
1
0.1
1
10
100
0.1
1
10
, Drain-to-Source Voltage (V)
DS
100
V
, Drain-to-Source Voltage (V)
V
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
I
= 35A
D
V
= 10V
GS
100
10
T
= 175°C
J
T
= 25°C
1
J
0.1
0.01
V
= 25V
DS
≤ 60µs PULSE WIDTH
4.0
5.0
6.0
7.0
8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
V
, Gate-to-Source Voltage (V)
GS
T
, Junction Temperature (°C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
1000
1000
L = 220nH
C = Variable
L = 220nH
C = 0.3µF
100°C
100°C
25°C
800
800
600
400
200
0
25°C
600
400
200
0
100
110
120
130
140
150
160
170
150
160
170
180
190
200
I
Peak Drain Current (A)
V
Drain-to -Source Voltage (V)
D,
DS,
Fig 6. Typical EPULSE vs. Drain Current
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
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3
IRFB4332PbF
1000
100
10
1400
L = 220nH
1200
C= 0.3µF
C= 0.2µF
C= 0.1µF
1000
800
600
400
200
0
T
= 175°C
J
1
T
= 25°C
0.8
J
V
= 0V
GS
1.0
0.1
25
50
75
100
125
150
0.2
0.4
0.6
1.2
Temperature (°C)
V
, Source-to-Drain Voltage (V)
SD
Fig 7. Typical EPULSE vs.Temperature
Fig 8. Typical Source-Drain Diode Forward Voltage
10000
8000
6000
4000
2000
0
20
V
C
= 0V,
f = 1 MHZ
I = 35A
D
GS
= C + C , C SHORTED
iss
gs
gd ds
V
V
V
= 200V
= 125V
= 50V
DS
DS
DS
C
= C
rss
gd
16
12
8
C
= C + C
ds
oss
gd
Ciss
Coss
Crss
4
0
0
40
80
120
160
1
10
100
1000
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
60
50
40
30
20
10
0
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
1µsec
100
10
1
100µsec
10µsec
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
25
50
75
100
125
150
175
1
10
100
1000
T , Junction Temperature (°C)
V
, Drain-to-Source Voltage (V)
J
DS
Fig 12. Maximum Safe Operating Area
Fig 11. Maximum Drain Current vs. Case Temperature
4
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IRFB4332PbF
1000
800
600
400
200
0
0.40
0.30
0.20
0.10
0.00
I
D
I
= 35A
D
TOP
8.3A
13A
35A
BOTTOM
T
= 125°C
= 25°C
J
T
J
5
6
7
8
9
10
25
50
75
100
125
150
175
V
, Gate-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
GS
J
Fig 13. On-Resistance Vs. Gate Voltage
Fig 14. Maximum Avalanche Energy Vs. Temperature
5.0
180
ton= 1µs
Duty cycle = 0.25
160
Half Sine Wave
Square Pulse
140
4.0
I
= 250µA
120
100
80
60
40
20
0
D
3.0
2.0
1.0
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
25
50
75
100
125
150
175
T
Case Temperature (°C)
J
Fig 16. Typical Repetitive peak Current vs.
Fig 15. Threshold Voltage vs. Temperature
Case temperature
1
D = 0.50
0.1
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W) τι (sec)
Cτ 0.077468 0.000097
0.169886 0.001689
0.13319 0.012629
τ
J τJ
τ
τ
τ
1 τ1
τ
2 τ2
3τ3
0.01
0.02
0.01
Ci= τi/Ri
Ci= τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFB4332PbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
V***
=10V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
*
VDD
**
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
0.01Ω
t
p
I
AS
Fig 19b. Unclamped Inductive Waveforms
Fig 19a. Unclamped Inductive Test Circuit
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
.2µF
Vgs
12V
.3µF
+
V
DS
D.U.T.
-
V
GS
Vgs(th)
3mA
I
I
D
G
Current Sampling Resistors
Qgs1
Qgs2
Qgd
Qgodr
Fig 20a. Gate Charge Test Circuit
Fig 20b. Gate Charge Waveform
6
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IRFB4332PbF
A
PULSE A
PULSE B
RG
C
DRIVER
L
VCC
B
Ipulse
DUT
RG
tST
Fig 21b. tst Test Waveforms
Fig 21a. tst and EPULSE Test Circuit
Fig 21c. EPULSE Test Waveforms
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7
IRFB4332PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
PART NUMBER
LOT CODE 1789
ASSEMBLED ON WW 19, 2000
IN THE ASSEMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
YEAR 0 = 2000
WEEK 19
Note: "P" in assembly lineposition
indicates "Lead - Free"
ASSEMBLY
LOT CODE
LINE C
TO-220AB packages are not recommended for Surface Mount Application.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.39mH, RG = 25Ω, IAS = 35A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢁ Half sine wave with duty cycle = 0.25, ton=1µsec.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/06
8
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