IRFBC20SPBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFBC20SPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总10页 (文件大小：381K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95543
IRFBC20S/LPbF
• Lead-Free
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IRFBC20S/LPbF
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IRFBC20S/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 530S WIT H
P AR T N U MB E R
L OT COD E 8024
IN T E R N AT IONAL
R E CT IF IE R
L OGO
AS S E MB L E D ON WW 02, 2000
IN T H E AS S E MB L Y L IN E "L "
F 530S
D AT E COD E
YE AR 0 = 2000
WE E K 02
N ote: "P " in as s embly line
pos ition indicates "L ead-F ree"
AS S E MB L Y
L OT COD E
L IN E
L
OR
P AR T N U MB E R
IN T E R N AT ION AL
R E CT IF IE R
L OGO
F 530S
D AT E COD E
P
=
D E S IGN AT E S L E AD-F R E E
P R OD U CT (OP T ION AL )
AS S E M B L Y
L OT CODE
YE AR 0 = 2000
W E E K 02
A = AS S E MB L Y S IT E CODE
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IRFBC20S/LPbF
TO-262 Package Outline
TO-262 Part Marking Information
E XAMPL E : T H IS IS AN IR L 3103L
L OT CODE 1789
PAR T NU MB E R
INT E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y L INE "C"
DAT E CODE
YE AR 7 = 1997
WE E K 19
Note: "P" in as s embly line
pos ition indicates "L ead-F ree"
AS S E MB L Y
L OT CODE
L INE
C
O R
PAR T NU MB E R
DAT E CODE
INT E R NAT IONAL
R E CT IF IE R
L OGO
P
=
DE S IGNAT E S L E AD-F R E E
PR ODU CT (OPT IONAL )
AS S E MB L Y
L OT CODE
YE AR 7 = 1997
WE E K 19
A = AS S E MB L Y S IT E CODE
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IRFBC20S/LPbF
D2Pak Tape & Reel Infomation
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/04
10
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相关型号：
IRFBC20STRRPBF
Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
VISHAY
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