IRFD420 [INFINEON]
Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=0.37A); 功率MOSFET （ VDSS = 500V ， RDS（ON） = 3.0ohm ，ID = 0.37A ）
| 型号： | IRFD420 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=0.37A) |
| 文件： | 总8页 (文件大小：411K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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PD -9.1227
IRFD420
HEXFET® Power MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
For Automatic Insertion
End Stackable
Fast Switching
Ease of paralleling
VDSS = 500V
RDS(on) = 3.0Ω
ID = 0.37A
Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The 4-pin DIP package is a low-cost machine-insertable case style which can be
stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain
serves as a thermal link to the mounting surface for power dissipation levels up to
1 watt.
HD-1
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10 V
Continuous Drain Current, VGS @ 10 V
Pulsed Drain Current
0.37
A
0.23
3.0
PD @TC = 25°C
Power Dissipation
1.0
W
W/°C
V
Linear Derating Factor
0.0083
±20
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
51
mJ
A
0.37
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
0.10
mJ
V/ns
3.5
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case)
Thermal Resistance
Parameter
Junction-to-Ambient
Min.
—
Typ.
—
Max. Units
RθJA
120
°C/W
Revision 0
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IRFD420
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
500
—
—
2.0
1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
0.59
—
—
—
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
3.0
4.0
—
Ω
V
S
VGS = 10.0V, ID = 0.22A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 1.3A
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
VGS = 20V
—
Forward Transconductance
—
IDSS
Drain-to-Source Leakage Current
—
25
µA
nA
—
250
100
-100
24
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
—
—
VGS = -20V
Qg
—
ID = 2.1A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
—
3.3
13
nC
VDS = 400V
—
VGS = 10V
8.0
8.6
33
16
4.0
—
VDD = 250V
Rise Time
—
ID = 2.1A
ns
td(off)
tf
Turn-Off Delay Time
—
RG = 18Ω
Fall Time
—
RD = 120Ω
LD
Internal Drain Inductance
—
Between lead,
6mm (0.25in.)
from package
and center of
die contact
LS
Internal Source Inductance
—
6.0
—
nH
Ciss
Coss
Crss
Input Capacitance
—
—
—
360
92
—
—
—
VGS = 0V
Output Capacitance
pF
VDS = 25V
ƒ = 1.0MHz
Reverse Transfer Capacitance
37
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units Conditions
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
—
—
0.37
showing the
A
ISM
Pulsed Source Current
(Body Diode)
integral reverse
—
—
—
5.0
1.6
p-n junction diode.
TJ = 25°C, IS = 0.37A, VGS = 0V
TJ = 25°C, IF = 2.1A
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
—
—
—
V
260 520
0.70 1.4
ns
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
I
SD ≤ 4.4A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
VDD = 50V, starting TJ = 25°C, L = 40mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 1.5A.
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IRFD420
Fig 1. Typical Output Characteristics,
TC = 25oC
Fig 2. Typical Output Characteristics,
TC = 150oC
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRFD420
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRFD420
Fig 10a. Switching Time Test Circuit
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFD420
Fig 12a. Unclamped Inductive Test Circuit
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRFD420
dv/dt Test Circuit
Peak Diode Recovery Test Circuit
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IRFD420
Package Outline
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39)
1145 10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371
Data and specifications subject to change without notice.
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