IRFE310PBF [INFINEON]
Power Field-Effect Transistor, 1.2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET;
| 型号： | IRFE310PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 1.2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET 晶体 晶体管 |
| 文件： | 总7页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91782
IRFE310
JANTX2N6786U
JANTXV2N6786U
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
[REF:MIL-PRF-19500/556]
N-CHANNEL
400Volt, 3.6Ω, HEXFET
Product Summary
The leadless chip carrier (LCC) package represents
the logical next step in the continual evolution of
surface mount technology. The LCC provides
designers the extra flexibility they need to increase
circuit board density. International Rectifier has
engineered the LCC package to meet the specific
needs of the power market by increasing the size of
thebottomsourcepad,therebyenhancingthethermal
and electrical performance. The lid of the package
is grounded to the source to reduce RF interference.
Part Number
BVDSS
RDS(on)
ID
IRFE310
400V
3.6Ω
1.25A
Features:
n
n
n
n
n
n
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Small footprint
Surface Mount
Lightweight
HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling
and electrical parameter temperature stability.They
are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits,
and virtually any application where high reliability
is required.
Absolute Maximum Ratings
Parameter
IRFE310, JANTX-, JANTXV-, 2N6786U Units
I
@ V
= 10V, T = 25°C Continuous Drain Current
1.25
D
GS
C
A
I
D
@ V
= 10V, T = 100°C Continuous Drain Current
0.80
5.5
GS
C
I
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
DM
@ T = 25°C
P
15
W
W/°C
V
D
C
0.12
±20
V
GS
E
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
34
mJ
AS
dv/dt
2.8
V/ns
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
300 ( for 5 seconds)
0.42 (typical)
Surface Temperature
Weight
www.irf.com
1
10/9/98
IRFE310, JANTX-, JANTXV-, 2N6786U Devices
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
400
—
—
—
—
V
V
= 0V, I = 1.0mA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.37
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
2.0
0.87
—
—
—
—
—
—
—
3.6
3.7
4.0
—
V
= 10V, I = 0.8A
GS D
DS(on)
V
= 10V, I = 1.25A
GS
D
V
V
V
= V , I = 250µA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
> 15V, I
= 0.8A
DS
DS
I
25
250
V
= 0.8 x Max Rating,V =0V
DSS
DS GS
µA
—
V
= 0.8 x Max Rating
DS
V
= 0V, T = 125°C
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.0
100
-100
8.4
1.6
5.0
15
V
= 20V
GS
GSS
GSS
nA
nC
V
GS
= -20V
Q
Q
Q
V
= 10V, I = 1.25A
g
gs
gd
d(on)
r
GS
D
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
V
DS
= Max Rating x 0.5
t
t
t
t
V
= 15V, I = 1.25A,
DD D
Rise Time
Turn-Off Delay Time
20
35
R
= 7.5Ω
G
ns
d(off)
f
FallTime
30
Measured from drain
lead, 6mm (0.25 in)
from package to center
of die.
sym-
Modified MOSFET
bol showing the internal
inductances.
L
Internal Drain Inductance
—
D
nH
L
S
Internal Source Inductance
—
15
—
Measured from source
lead, 6mm (0.25 in)
from package to
source bonding pad.
C
C
C
Input Capacitance
—
—
—
190
65
24
—
—
—
V
= 0V, V
= 25V
iss
GS
DS
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
pF
oss
rss
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
—
—
—
—
1.25
5.5
S
SM
Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
A
V
t
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.4
540
4.5
V
ns
µC
T = 25°C, I = 1.25A, V
= 0V
j
SD
rr
S
GS
T = 25°C, I = 1.25A, di/dt ≤ 100A/µs
j
F
V
Q
≤ 50V
DD
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
—
8.3
27
thJC
°C/W
Junction-to-PC board
soldered to a copper-clad PC board
thJ-PCB
2
www.irf.com
IRFE310, JANTX-, JANTXV-, 2N6786U Devices
10
10
VGS
VGS
15V
10V
TOP
15V
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
1
1
4.5V
4.5V
0.1
0.01
0.1
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
0.01
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
10
1.2A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 150 C
J
1
°
T = 25 C
J
V
= 50V
DS
V
= 10V
20µs PULSE WIDTH
GS
0.1
4.0
5.0
6.0
7.0
8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
www.irf.com
3
IRFE310, JANTX-, JANTXV-, 2N6786U Devices
500
20
15
10
5
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= 1.25 A
GS
C
= C + C
iss
gs
gd
gd ,
V
V
V
= 320V
= 200V
= 80V
DS
DS
DS
C
= C
rss
C
= C + C
gd
400
300
200
100
0
oss
ds
C
C
iss
oss
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
2
4
6
8
10
12
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
10
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
°
T = 150 C
J
100us
1
1
1ms
10ms
0.1
0.01
°
T = 25 C
J
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.4
0.6
0.8
1.0
1.2
1.4
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
4
www.irf.com
IRFE310, JANTX-, JANTXV-, 2N6786U Devices
1.25
1.00
0.75
0.50
0.25
0.00
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
0.10
0.05
1
P
DM
t
1
0.02
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.1
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
www.irf.com
5
IRFE310, JANTX-, JANTXV-, 2N6786U Devices
75
60
45
30
15
0
I
D
TOP
0.56A
0.79A
BOTTOM 1.25A
15V
DRIVER
L
V
D S
D.U .T
R
G
+
V
D D
-
I
A
AS
10V
2
t
0.01Ω
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR )D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig12b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
10V
Q
G
.3µF
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
www.irf.com
IRFE310, JANTX-, JANTXV-, 2N6786U Devices
Notes:
Repetitive Rating; Pulse width limited by
maximum junction temperature.
I
SD
≤ 1.25A, di/dt ≤ 180 A/µs,
≤ BV , T ≤ 150°C, Suggested RG = 50Ω
V
DD
DSS
J
Refer to current HEXFET reliability report.
@ V
= 50 V, Starting T = 25°C,
J
DD
= [0.5
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
E
L
(I 2) ]
AS
*
* L
Peak I =1.25A, V
=10 V, 25 ≤ R ≤ 200Ω
G
L
GS
Case Outline and Dimensions — Leadless Chip Carrier (LCC) Package
IR Case Style Leadless Chip Carrier (LCC)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice.
10/98
www.irf.com
7
相关型号：
IRFE320PBF
Power Field-Effect Transistor, 1.8A I(D), 400V, 2.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
INFINEON
IRFE330PBF
Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
INFINEON
IRFE330SCV
Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
INFINEON
IRFE330SCVPBF
Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
INFINEON
IRFE330SCX
Power Field-Effect Transistor, 3A I(D), 400V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
INFINEON
©2020 ICPDF网 联系我们和版权申明