IRFF014 [INFINEON]

Power Field-Effect Transistor, 6.3A I(D), 60V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF;
IRFF014
型号: IRFF014
厂家: Infineon    Infineon
描述:

Power Field-Effect Transistor, 6.3A I(D), 60V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

脉冲 晶体管
文件: 总1页 (文件大小:43K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Powered by ICminer.com Electronic-Library Service CopyRight 2003  

相关型号:

IRFF014PBF

Power Field-Effect Transistor, 6.3A I(D), 60V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
INFINEON

IRFF024

60V, N-CHANNEL
INFINEON

IRFF024

N-Channel MOSFET in a Hermetically sealed TO39
SEME-LAB

IRFF034

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package
SEME-LAB

IRFF034

Power Field-Effect Transistor, 16.2A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
INFINEON

IRFF110

3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET
INTERSIL

IRFF110

Power MOS Field-Effect Transistors
GE

IRFF110

N-Channel MOSFET in a Hermetically sealed TO39
SEME-LAB

IRFF110

Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205
VISHAY

IRFF110

Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
FAIRCHILD

IRFF111

Power MOS Field-Effect Transistors
GE

IRFF111

Power Field-Effect Transistor, 3.5A I(D), 80V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
INFINEON