IRFF320PBF
更新时间：2024-10-29 13:00:23
品牌：INFINEON
描述：Power Field-Effect Transistor, 2A I(D), 400V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
概述
数据手册IRFF320PBF 概述
Power Field-Effect Transistor, 2A I(D), 400V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
IRFF320PBF 数据手册
通过下载IRFF320PBF数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载PD-90428C
IRFF320
JANTX2N6792
JANTXV2N6792
REPETITIVEAVALANCHEANDdv/dtRATED
HEXFET TRANSISTORS
THRU-HOLE (TO-205AF)
REF:MIL-PRF-19500/555
400V, N-CHANNEL
Product Summary
Part Number BVDSS RDS(on)
IRFF320 400V 1.8Ω
ID
2.0A
The HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance.
TO-39
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
Features:
n
n
n
n
n
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 10V, T = 25°C
Continuous Drain Current
2.0
1.25
10
D
GS
C
A
I
D
= 10V, T = 100°C Continuous Drain Current
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
20
W
W/°C
V
D
C
0.16
±20
V
GS
Gate-to-Source Voltage
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
0.19
—
mJ
AS
I
A
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
—
mJ
AR
dv/dt
4.0
V/ns
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
For footnotes refer to the last page
www.irf.com
1
01/22/01
IRFF320
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
400
—
—
—
—
V
V
= 0V, I = 1.0mA
D
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T
Temperature Coefficient of Breakdown
Voltage
0.37
V/°C
DSS
J
D
R
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
1.8
2.07
4.0
—
V
V
= 10V, I = 1.25A ➀
D
DS(on)
GS
GS
Ω
=10V, I =2.0A ➀
D
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
1.0
—
V
V
= V , I = 250µA
GS(th)
DS
GS
D
Ω
g
fs
S ( )
V
> 15V, I = 1.25A ➀
DS
V
DS
I
25
= 320V, V =0V
DS GS
DSS
—
250
µA
V
= 320V
DS
= 0V, T = 125°C
V
GS
J
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
15.5
2.6
8.3
40
V
= 20V
GSS
GSS
GS
I
nA
nC
V
= -20V
GS
Q
Q
Q
8.7
0.8
4.2
—
V
=10V, ID =2.0A
g
gs
GS
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
V
= 200V
DS
gd
d(on)
r
t
t
V
DD
= 200V, I = 2.0A,
D
—
35
R = 7.5Ω
G
n s
t
Turn-Off Delay Time
Fall Time
—
60
d(off)
t
—
35
f
L
L
Total Inductance
—
—
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
S +
D
nH
C
C
C
Input Capacitance
—
—
—
350
100
45
V
= 0V, V
= 25V
iss
GS
DS
f = 1.0MHz
Output Capacitance
—
—
pF
oss
rss
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
2.0
10
S
A
I
SM
V
1.4
650
5.0
V
nS
µC
T = 25°C, I =2.0A, V
= 0V ➀
j
SD
S
GS
t
Reverse Recovery Time
T = 25°C, I =2.0A, di/dt ≤ 100A/µs
j
rr
F
Q
Reverse Recovery Charge
V
≤ 50V ➀
RR
DD
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
—
6.25
175
thJC
thJA
°C/W
Junction-to-Ambient
Typical socket mount.
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
IRFF320
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig4. NormalizedOn-Resistance
Vs.Temperature
www.irf.com
3
IRFF320
13 a& b
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
Fig 8. MaximumSafeOperatingArea
Fig 7. Typical Source-Drain Diode
ForwardVoltage
4
www.irf.com
IRFF320
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
Fig9. MaximumDrainCurrentVs.
t
t
r
t
t
f
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
Fig11. MaximumEffectiveTransientThermalImpedance, Junction-to-Case
www.irf.com
5
IRFF320
15V
DRIVER
L
V
D S
D.U.T
AS
R
G
+
-
V
D D
I
A
10V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
www.irf.com
IRFF320
Foot Notes:
➀➀ I
SD
≤ 2.0A, di/dt ≤ 65A/µs,
≤ 400V, T ≤ 150°C
➀➀ Repetitive Rating; Pulse width limited by
V
DD
maximum junction temperature.
J
Suggested RG =7.5 Ω
➀➀➀V
=50V, starting T = 25°C,
DD
J
➀➀➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Peak I = 2.0A,
L
Case Outline and Dimensions —TO-205AF
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 1/01
www.irf.com
7
IRFF320PBF 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| IRFF320R | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2.5A I(D) | TO-205AF | 获取价格 |
|
| IRFF321 | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.5A I(D) | TO-205AF | 获取价格 |
|
| IRFF321R | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.5A I(D) | TO-205AF | 获取价格 |
|
| IRFF322 | VISHAY | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 获取价格 |
|
| IRFF322R | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2A I(D) | TO-205AF | 获取价格 |
|
| IRFF323 | VISHAY | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 获取价格 |
|
| IRFF323R | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2A I(D) | TO-205AF | 获取价格 |
|
| IRFF330 | INTERSIL | 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET | 获取价格 |
|
| IRFF330 | SEME-LAB | N-Channel MOSFET in a Hermetically sealed TO39 | 获取价格 |
|
| IRFF330 | RENESAS | 3.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 获取价格 |
|
IRFF320PBF 相关文章
HARTING(浩亭)圆形连接器产品选型手册
- 2024-10-31
- 6
HYCON(宏康科技)产品选型手册
- 2024-10-31
- 6
GREEGOO整流二极管和晶闸管产品选型手册
- 2024-10-31
- 7
西门子豪掷106亿美元，战略收购工程软件巨头Altair
- 2024-10-31
- 8
