IRFF9220PBF [INFINEON]

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型号：	IRFF9220PBF
厂家：	Infineon
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PD - 90553C

IRFF9220

JANTX2N6847

JANTXV2N6847

REPETITIVEAVALANCHEANDdv/dtRATED

HEXFET TRANSISTORS

THRU-HOLE (TO-205AF)

REF:MIL-PRF-19500/563

200V, P-CHANNEL

Product Summary

Part Number BVDSS RDS(on)

IRFF9220 -200V 1.5Ω

-2.5A

The HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance.

TO-39

The HEXFET transistors also feature all of the well

established advantages of MOSFETs such as volt-

age control, very fast switching, ease of parelleling

and temperature stability of the electrical parameters.

Features:

Repetitive Avalanche Ratings

Dynamic dv/dt Rating

Hermetically Sealed

Simple Drive Requirements

Ease of Paralleling

They are well suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high energy pulse circuits.

Absolute Maximum Ratings

Parameter

Units

@ V

= -10V, T = 25°C

Continuous Drain Current

-2.5

-1.6

-10

= -10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/°C

0.16

±20

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

180

—

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

—

dv/dt

-5.0

-55 to 150

V/ns

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063 in. (1.6mm) from case for 10s)

0.98(typical)

For footnotes refer to the last page

www.irf.com

01/22/01

IRFF9220

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

DSS

Drain-to-Source Breakdown Voltage

-200

—

= 0V, I = -1.0mA

Reference to 25°C, I = -1.0mA

∆BV

/∆T

Temperature Coefficient of Breakdown

Voltage

-0.22

V/°C

DSS

Static Drain-to-Source On-State

Resistance

—

1.5

1.725

-4.0

—

= -10V, I = -1.6A ➀

GS D

DS(on)

Ω

=-10V, I =-2.5A ➀

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

-2.0

1.0

—

= V , I = -250µA

GS(th)

Ω

S ( )

> -15V, I = -1.6A ➀

-25

= -160V, V =0V

DS GS

DSS

—

-250

µA

= -160V

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

7.0

-100

100

= -20V

GSS

= 20V

GSS

4.0

1.1

0.8

—

=-10V, ID = -2.5A

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

3.2

8.4

= -100V

d(on)

= -100V, I = -2.5A,

DD D

—

=7.5Ω

n s

Turn-Off Delay Time

Fall Time

—

d(off)

—

Total Inductance

—

Measured from drain lead (6mm/0.25in. from

package) to source lead (6mm/0.25in. from

package)

S +

Input Capacitance

—

330

100

= 0V, V

= -25V

iss

f = 1.0MHz

Output Capacitance

—

oss

rss

Reverse Transfer Capacitance

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) ➀

Diode Forward Voltage

—

-2.5

-10

-4.8

300

3.0

µC

T = 25°C, I =-2.5A, V

= 0V ➀

Reverse Recovery Time

T = 25°C, I = -2.5.A, di/dt ≤ -100A/µs

Reverse Recovery Charge

≤ -50V ➀

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

Junction-to-Case

—

6.25

175

thJC

thJA

°C/W

Junction-to-Ambient

Typical socket mount

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

www.irf.com

IRFF9220

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig4. NormalizedOn-Resistance

Vs.Temperature

www.irf.com

IRFF9220

13 a& b

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

Fig 8. MaximumSafeOperatingArea

Fig 7. Typical Source-Drain Diode

ForwardVoltage

www.irf.com

IRFF9220

R_D

V_DS

V_GS

D.U.T.

R_G

V_DD

-10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

d(on)

d(off)

10%

90%

Fig9. MaximumDrainCurrentVs.

CaseTemperature

Fig 10b. Switching Time Waveforms

Fig11. MaximumEffectiveTransientThermalImpedance, Junction-to-Case

www.irf.com

IRFF9220

D.U.T

DRIVER

-10V

-20V

0.01

Ω

15V

Fig 12a. Unclamped Inductive Test Circuit

Fig 12c. Maximum Avalanche Energy

Vs.DrainCurrent

(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

-12V

12V

.3µF

-10V

D.U.T.

-3mA

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

www.irf.com

IRFF9220

Foot Notes:

➀➀ I

≤ -2.5A, di/dt ≤ -95A/µs,

≤ -200V, T ≤ 150°C

➀➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

Suggested RG = 7.5 Ω

➀➀➀V

= -50V, starting T = 25°C,

➀➀➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Peak I = -2.5A,

Case Outline and Dimensions —TO-205AF

LEGEND

1- SOURCE

2- GATE

3- DRAIN

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111

IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630

IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936

Data and specifications subject to change without notice. 1/01

www.irf.com

IRFF9220PBF [INFINEON]

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