IRFG5210 [INFINEON]
200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY; 200V ，结合2N -2P - CHANNEL HEXFET MOSFET技术
| 型号： | IRFG5210 |
| 厂家： | 
Infineon |
| 描述： | 200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY |
| 文件： | 总12页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91664B
IRFG5210
200V, Combination 2N-2P-CHANNEL
HEXFET® MOSFETTECHNOLOGY
POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
Part Number
IRFG5210
IRFG5210
RDS(on)
1.6Ω
ID
CHANNEL
0.68A
-0.68A
N
P
1.6Ω
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance. HEXFET tran-
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
MO-036AB
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n
Light-weight
Pre-Irradiation
Absolute Maximum Ratings (Per Die)
Parameter
=± 10V, T = 25°C Continuous Drain Current
N-Channel
0.68
P-Channel
Units
I
@ V
@ V
-0.68
D
GS
C
A
I
=± 10V, T = 100°C Continuous Drain Current
0.4
-0.4
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
2.72➀
14
-2.72➀
14
DM
@ T = 25°C
P
W
W/°C
V
D
C
0.011
±20
64➀
—
0.011
±20
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current ➀
GS
E
110➀
—
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt
Operating Junction
—
—
mJ
V/ns
AR
dv/dt
20➀
27➀
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
For footnotes refer to the last page
www.irf.com
1
04/17/02
IRFG5210
Electrical Characteristics For Each N-Channel Device@Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
200
—
—
V
V
= 0V, I = 1.0mA
D
GS
Reference to 25°C, I = 1.0mA
—
—
∆BV
/∆T Temperature Coefficient of Breakdown
0.27
V/°C
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
1.6
1.83
4.0
—
V
= 10V, I = 0.4A
GS D
DS(on)
➀
Ω
V
GS
= 10V, I = 0.68A
D
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
0.54
—
V
V
= V , I = 0.25mA
GS(th)
fs
DS
DS
GS
D
Ω
g
S ( )
V
> 15V, I
= 0.4A ➀
DS
I
25
V
DS
= 160V, V = 0V
GS
DSS
µA
—
250
V
= 160V,
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
100
-100
9.5
1.4
4.3
8.7
2.4
19
V
= 20V
GSS
GSS
GS
nA
nC
V
= -20V
GS
Q
Q
Q
V
=10V, I = 0.68A,
g
gs
gd
d(on)
r
GS
D
V
DS
= 100V
t
t
t
t
V
DD
= 100V, I = 0.68A,
=10V, R = 7.5Ω
D
G
V
GS
ns
Turn-Off Delay Time
FallTime
Total Inductance
d(off)
24
—
f
L
+ L
M. easured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
S
D
nH
C
Input Capacitance
—
—
—
140
56
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
C
Output Capacitance
pF
oss
C
Reverse Transfer Capacitance
14
rss
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
0.63
2.5
1.5
S
A
SM
SD
V
T = 25°C, I = 0.68A, V = 0V ➀
GS
j
S
Reverse Recovery Time
110
310
nS
nC
T = 25°C, I = 0.68A, di/dt ≤ 100A/µs
j
rr
F
V
Q
Reverse Recovery Charge
≤ 50V ➀
DD
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
—
17
90
thJC
thJA
°C/W
Junction-to-Ambient
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRFG5210
Electrical Characteristics For Each P-Channel Device@Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
-200
—
—
—
—
V
V
= 0V, I = -1.0mA
D
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
-0.22
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
-2.0
0.64
—
—
—
—
—
—
—
1.6
1.83
-4.0
—
V
= -10V, I = -0.4A
GS D
DS(on)
Ω
➀
V
= -10V, I =- 0.68A
GS
D
V
V
V
= V , I = -0.25mA
GS
GS(th)
fs
DS
D
Ω
g
S ( )
V
> -15V, I = -0.4A ➀
DS
V
DS
I
-25
-250
= -160V, V = 0V
DSS
DS GS
µA
—
V
= -160V,
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
-100
100
18
V
V
= - 20V
= 20V
GSS
GSS
GS
GS
nA
nC
ns
Q
Q
Q
V
= -10V, I = -0.68A,
g
gs
gd
d(on)
r
GS
D
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
2.8
8.4
15
V
= -100V
DS
t
t
t
t
V
DD
= -100V, I = -0.68A,
D
11
36
V
= -10V, R = 7.5Ω
GS G
d(off)
f
43
L
+ L
Total Inductance
—
nH
pF
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
S
D
C
iss
Input Capacitance
Output Capacitance
—
—
—
320
110
20
—
—
—
V
GS
= 0V, V = -25V
f = 1.0MHz
DS
C
C
oss
rss
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
-0.61
-2.4
-4.8
120
S
A
SM
V
T = 25°C, I = -0.68A, V
= 0V ➀
j
SD
rr
S
GS
Reverse Recovery Time
nS
nC
T = 25°C, I = -0.68A, di/dt ≤ -100A/µs
j
F
Q
Reverse Recovery Charge
420
V
≤ -50V ➀
DD
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
on
S
D
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
—
17
90
thJC
thJA
°C/W
Junction-to-Ambient
Typical socket mount
For footnotes refer to the last page
www.irf.com
3
IRFG5210
N-Channel
Q1,Q3
10
10
VGS
15V
10V
VGS
15V
10V
TOP
TOP
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
1
1
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
J
°
T = 150 C
J
°
0.1
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
10
0.68A
=
I
D
°
T = 150 C
J
1
°
T = 25 C
J
V
= 50V
DS
V
=
10V
GS
20µs PULSE WIDTH
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
4
5
6
7
°
T , Junction Temperatur( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
4
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IRFG5210
N-Channel
Q1,Q3
20
16
12
8
300
240
180
120
60
I = 0.68A
D
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
C
= C + C
iss
gs
gd
gd ,
C
= C
rss
C
= C + C
gd
oss
ds
C
iss
C
C
oss
4
rss
FOR TEST CIRCUIT
13a&b
SEE FIGURE 1
0
0
0
2
4
6
8
10
1
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
10
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
°
T = 150 C
J
1
1
1ms
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.4
0.1
0.1
0.6
0.8
1.0
1.2
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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5
IRFG5210
N-Channel
Q1,Q3
0.7
0.6
0.5
0.4
0.3
0.2
0.1
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0.0
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
2
DM
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
A
DM
thJA
0.1
0.001
0.01
0.1
1
10
100
1000
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
6
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IRFG5210
N-Channel
Q1,Q3
150
I
D
TOP
0.30A
0.43A
15V
120
90
60
30
0
BOTTOM 0.68A
DRIVER
L
V
D S
D.U .T
R
.
G
+
-
V
D D
I
A
AS
VGS
t
0.01
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR )D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig12b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
10V
Q
G
.3µF
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRFG5210
P-Channel
Q2,Q4
10
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
TOP
BOTTOM -4.5V
1
-4.5V
20µs PULSE WIDTH
°
T = 150 C
J
0.1
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-0.68A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
1
V
= -50V
20µs PULSE WIDTH
DS
V
=-1
10V
GS
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
4
5
6 7
°
T , Junction Temperatur(C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
8
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IRFG5210
P-Channel
Q2,Q4
600
500
400
300
200
100
0
20
V
= 0V,
f = 1MHz
gd , ds
GS
I
D
= -0.68A
C
= C + C
C
SHORTED
iss
gs
V
V
V
=-160V
=-100V
=-40V
DS
DS
DS
C
= C
gd
rss
C
= C + C
oss
ds
gd
16
12
8
C
iss
C
C
oss
4
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
4
8
12
16
20
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
10
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
1ms
°
T = 150 C
J
1
1
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
1.0
0.1
2.0
3.0
4.0
1
10
100
1000
-V ,Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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9
IRFG5210
P-Channel
Q2,Q4
0.7
0.6
0.5
0.4
0.3
0.2
0.1
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0.0
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
2
DM
1
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
A
DM
thJA
0.1
0.001
0.01
0.1
1
10
100
1000
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
10
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IRFG5210
P-Channel
Q2,Q4
L
V
DS
300
I
D
TOP
-0.30A
-0.43A
D.U.T
R
.
G
V
DD
A
240
180
120
60
BOTTOM-0.68A
I
AS
DRIVER
-2V0GVS
0.01
t
Ω
p
15V
Fig 12a. Unclamped Inductive Test Circuit
0
I
25
50
75
100
125
150
AS
°
Starting T , Junction Temperature( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig12b. UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
Q
G
-10V
.3µF
-10V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
www.irf.com
11
IRFG5210
Footnotes:
➀➀Repetitive Rating; Pulse width limited by
➀➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
maximum junction temperature.
➀V
= - 50V, starting T = 25°C, L= 475mH,
J
➀➀➀V
= 50V, starting T = 25°C, L= 276mH,
J
DD
Peak I = - 0.68A, V
DD
Peak I = 0.68A, V
= -10V
= 10V
L
GS
L
GS
➀ I
≤ - 0.68A, di/dt ≤ - 290A/µs,
≤ -200V, T ≤ 150°C
➀➀ I
≤ 0.68A, di/dt ≤ 290A/µs,
SD
V
SD
DD
V
≤ 200V, T ≤ 150°C
DD
J
J
➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions — MO-036AB
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/02
12
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