IRFH3707PBF_10 [INFINEON]
HEXFETPower MOSFET; HEXFETPower MOSFET
| 型号： | IRFH3707PBF_10 |
| 厂家： | 
Infineon |
| 描述： | HEXFETPower MOSFET |
| 文件： | 总10页 (文件大小：303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96227B
IRFH3707PbF
HEXFET® Power MOSFET
Applications
l Synchronous Buck Converter for Computer
Processor Power
l Isolated DC to DC Converters for Network and
Telecom
l Buck Converters for Set-Top Boxes
VDSS
30V
RDS(on) max
Qg
12.4m @VGS = 10V
5.4nC
l System/load switch
Benefits
S
S
l
l
l
l
Low RDS(ON)
Very Low Gate Charge
Low Junction to PCB Thermal Resistance
Fully Characterized Avalanche Voltage and
Current
D
D
D
D
S
G
l
l
l
100% Tested for RG
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
3mm x 3mm PQFN
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
Units
VDS
30
± 20
12
V
V
Gate-to-Source Voltage
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
I
I
I
@ TA = 25°C
D
D
D
@ TA = 70°C
@ TC = 25°C
9.4
29
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
18
I
96
DM
Power Dissipation
Power Dissipation
P
P
@TA = 25°C
@TA = 70°C
2.8
1.8
D
D
W
Linear Derating Factor
Operating Junction and
0.02
-55 to + 150
W/°C
°C
T
J
T
STG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
7.5
45
Units
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (t<10s)
RθJC
RθJA
RθJA
–––
–––
–––
°C/W
31
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 10
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1
09/17/10
IRFH3707PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
BVDSS
∆Β
RDS(on)
30
–––
0.02
9.4
–––
V
∆
V
DSS/ TJ
Breakdown Voltage Temp. Coefficient –––
––– V/°C Reference to 25°C, ID = 1mA
12.4 GS = 10V, ID = 12A
Static Drain-to-Source On-Resistance
–––
–––
1.35
–––
–––
–––
–––
–––
17
V
Ω
m
14.5 17.9
VGS = 4.5V, ID = 9.4A
VGS(th)
Gate Threshold Voltage
1.8
-6.2
–––
–––
–––
2.35
V
VDS = VGS, ID = 25µA
∆
VGS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
IDSS
1.0
µA
V
V
V
V
DS = 24V, VGS = 0V
DS = 24V, VGS = 0V, TJ = 125°C
GS = 20V
150
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
––– -100
GS = -20V
gfs
Qg
–––
5.4
1.1
0.7
2.2
1.5
2.9
3.8
–––
8.1
S
VDS = 15V, ID = 9.4A
–––
–––
–––
–––
–––
–––
–––
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
–––
–––
–––
–––
–––
–––
VDS = 15V
Qgs2
Qgd
VGS = 4.5V
ID = 9.4A
nC
Qgodr
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
See Fig.17 & 18
Qsw
Qoss
Output Charge
nC VDS = 16V, VGS = 0V
RG
td(on)
tr
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
–––
2.0
9.0
11
Ω
–––
–––
V
DD = 15V, VGS = 4.5V
–––
–––
–––
–––
–––
–––
ID = 9.4A
ns
td(off)
tf
Ω
RG=1.3
See Fig.15
VGS = 0V
Turn-Off Delay Time
Fall Time
9.9
5.6
755
171
83
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS = 15V
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
13
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
Avalanche Current
9.4
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
MOSFET symbol
–––
–––
3.5
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
G
ISM
–––
–––
96
S
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
20
1.0
30
41
V
T = 25°C, I = 9.4A, V = 0V
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 9.4A, VDD = 15V
J F
Qrr
ton
di/dt = 200A/µs
27
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFH3707PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
BOTTOM
BOTTOM
1
2.7V
2.7V
60µs PULSE WIDTH
Tj = 150°C
10
, Drain-to-Source Voltage (V)
≤
60µs PULSE WIDT
Tj = 25°C
≤
0.1
1
0.1
1
10
100
0.1
1
100
V
, Drain-to-Source Voltage (V)
V
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 12A
D
V
= 10V
GS
10
1
T
= 25°C
J
T = 150°C
J
V
= 15V
DS
≤
60µs PULSE WIDTH
0.1
1
2
3
4
5
6
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRFH3707PbF
14.0
12.0
10.0
8.0
10000
V
= 0V,
= C
f = 1 MHZ
GS
I = 9.4A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
V
V
= 24V
= 15V
DS
DS
= C + C
ds
gd
1000
100
10
C
iss
C
oss
6.0
C
rss
4.0
2.0
0.0
0
2
4
6
8
10 12 14 16
1
10
, Drain-to-Source Voltage (V)
100
Q , Total Gate Charge (nC)
V
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
100µsec
T
= 150°C
J
T
= 25°C
1msec
J
1
10msec
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.2
0.4
V
0.6
0.8
1
1.2
1.4
1.6
0
1
10
100
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFH3707PbF
12
10
8
2.5
2.0
1.5
1.0
0.5
I
= 25µA
D
6
4
2
0
25
50
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
T
, Ambient Temperature (°C)
T
, Temperature ( °C )
A
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Threshold Voltage Vs. Temperature
Ambient Temperature
100
10
D = 0.50
0.20
0.10
0.05
1
0.02
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
SINGLE PULSE
( THERMAL RESPONSE )
A
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRFH3707PbF
35
30
25
20
60
50
40
30
20
10
0
I
D
I
= 12A
D
TOP
2.95A
3.63A
BOTTOM 9.40A
T
= 125°C
= 25°C
J
15
10
5
T
J
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
V
Gate -to -Source Voltage (V)
J
GS,
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy
vs. Drain Current
RD
VDS
15V
VGS
D.U.T.
RG
DRIVER
+
L
+VDD
V
DS
-
VGS
PulseWidth ≤ 1 µs
DutyFactor≤ 0.1
D.U.T
AS
R
G
V
DD
-
I
A
20V
Ω
0.01
t
p
Fig 15a. Switching Time Test Circuit
Fig 14a. Unclamped Inductive Test Circuit
V
(BR)DSS
VDS
t
p
90%
10%
VGS
td(on)
td(off)
tr
tf
I
AS
Fig 15b. Switching Time Waveforms
Fig 14b. Unclamped Inductive Waveforms
6
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IRFH3707PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Current Regulator
Id
Vds
Same Type as D.U.T.
Vgs
50KΩ
.2µF
.3µF
12V
+
V
DS
D.U.T.
-
Vgs(th)
Qgs1
V
GS
3mA
I
I
Qgs2
Qgd
Qgodr
G
D
Current Sampling Resistors
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
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7
IRFH3707PbF
PQFN Package Details
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRFH3707PbF
PQFN Part Marking
PQFN Tape and Reel
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
www.irf.com
9
IRFH3707PbF
Orderable part number
Package Type
PQFN 3mm x 3mm
Standard Pack
Note
Form
Tape and Reel
Quantity
IRFH3707TRPBF
4000
Qualification information†
Cons umer††
(per JEDEC JES D47F ††† guidelines )
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
PQFN 3mm x 3mm
(per IPC/JEDEC J-S T D-020D†††
)
Yes
†
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
††
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.297mH, RG = 25Ω, IAS = 9.4A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Rthjc is guaranteed by design.
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Refer to application note #AN-994.
Data and specifications subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2010
10
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相关型号：
IRFH4201TRPBF
Power Field-Effect Transistor, 49A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
INFINEON
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