IRFH5302DPBF [INFINEON]
Synchronous MOSFET for high frequency buck converters; 同步MOSFET高频降压转换器
| 型号： | IRFH5302DPBF |
| 厂家： | 
Infineon |
| 描述： | Synchronous MOSFET for high frequency buck converters |
| 文件： | 总8页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFH5302PbF
HEXFET® Power MOSFET
VDS
30
V
RDS(on) max
(@VGS = 10V)
2.5
mΩ
VSD max
(@IS = 5.0A)
trr (typical)
0.65
19
V
ns
A
ID
PQFN 5X6 mm
100
(@Tc(Bottom) = 25°C)
Applications
• Synchronous MOSFET for high frequency buck converters
FeaturesandBenefits
Features
Benefits
Low RDSon (<2.5m )
Ω
Lower Conduction Losses
Lower Switching Losses
Increased Power Density
Increased Reliability
Schottky Intrinsic Diode with Low Forward Voltage
Low Thermal Resistance to PCB (<1.2°C/W)
100% Rg tested
Low Profile (<0.9 mm)
results in Increased Power Density
Industry-Standard Pinout
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
Package Type
Standard Pack
Form
Tape and Reel
Tape and Reel
Note
Quantity
4000
IRFH5302DTRPBF
IRFH5302DTR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
400
EOL Notice #259
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
30
Units
VDS
V
V
Gate-to-Source Voltage
± 20
29
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
I
@ TA = 25°C
D
D
D
D
@ TA = 70°C
23
A
@ TC(Bottom) = 25°C
@ TC(Bottom) = 100°C
100
100
400
3.6
DM
Power Dissipation
P
P
@TA = 25°C
D
D
W
Power Dissipation
@TC(Bottom) = 25°C
104
0.83
-55 to + 150
Linear Derating Factor
Operating Junction and
W/°C
°C
T
T
J
Storage Temperature Range
STG
Notes through are on page 8
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IRFH5302PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆Β
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
-0.25
2.0
–––
–––
2.5
V
VGS = 0V, ID = 500µA
V/°C Reference to 25°C, ID = 1.0mA
GS = 10V, ID = 50A
∆
VDSS/ TJ
–––
–––
–––
V
Ω
m
3.1
3.7
VGS = 4.5V, ID = 50A
VDS = VGS, ID = 100µA
VGS(th)
∆VGS(th)
IDSS
Gate Threshold Voltage
1.35
–––
–––
–––
–––
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.80
-10
–––
–––
–––
–––
–––
55
2.35
V
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
500
5.0
VDS = 24V, VGS = 0V
µA
V
V
V
DS = 24V, VGS = 0V, TJ = 125°C
mA
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
-100
–––
–––
39
GS = 20V
nA
GS = -20V
gfs
S
VDS = 15V, ID = 50A
Qg
nC VGS = 10V, VDS = 15V, ID = 50A
Qg
Total Gate Charge
26
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
6.2
4.0
7.9
7.9
11.9
19
–––
–––
–––
–––
–––
–––
VDS = 15V
VGS = 4.5V
nC
ID = 50A
nC
VDS = 16V, VGS = 0V
Gate Resistance
1.9
16
Ω
–––
–––
td(on)
tr
td(off)
tf
Turn-On Delay Time
VDD = 15V, VGS = 4.5V
ID = 50A
Rise Time
30
–––
–––
–––
–––
–––
–––
ns
pF
Turn-Off Delay Time
20
RG=1.8Ω
Fall Time
12
Ciss
Coss
Crss
Input Capacitance
3635
680
260
VGS = 0V
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
130
50
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
MOSFET symbol
–––
–––
100
showing the
integral reverse
(Body Diode)
Pulsed Source Current
A
G
ISM
–––
–––
400
p-n junction diode.
(Body Diode)
VSD
VSD
trr
T = 25°C, I = 5.0A, V = 0V
Diode Forward Voltage
–––
–––
–––
–––
–––
–––
19
0.65
1.0
29
V
V
J
S
GS
T = 25°C, I = 50A, V = 0V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
J
S
GS
T = 25°C, I = 50A, VDD = 15V
ns
nC
J
F
Qrr
ton
di/dt = 300A/µs
28
42
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
Units
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
RθJC (Bottom)
RθJC (Top)
RθJA
1.2
15
35
22
°C/W
RθJA (<10s)
2
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IRFH5302PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
BOTTOM
BOTTOM
2.5V
2.5V
1
60µs PULSE WIDTH
Tj = 150°C
≤
60µs PULSE WIDTH
Tj = 25°C
≤
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
1.8
I
= 50A
D
V
= 10V
GS
1.6
1.4
1.2
1.0
0.8
0.6
100
10
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
≤
60µs PULSE WIDTH
1.0
1
2
3
4
5
6
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 50A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
12.0
= C
rss
oss
gd
= C + C
V
V
V
= 24V
= 15V
= 6.0V
DS
DS
DS
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
C
oss
C
rss
100
1
10
100
0
20
40
60
80
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
G
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
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IRFH5302PbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100µsec
1msec
T
= 150°C
J
10msec
T = 25°C
J
Tc = 25°C
Tj = 150°C
Single Pulse
DC
V
= 0V
1.2
GS
1.0
1
0.0
0.2
V
0.4
0.6
0.8
1.0
1.4
0
1
10
100
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
160
3.0
140
Limited By Package
2.5
2.0
1.5
1.0
0.5
0.0
120
100
80
60
40
20
0
I
I
I
I
= 100µA
= 250µA
= 1.0mA
= 1.0A
D
D
D
D
25
50
T
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
, Case Temperature (°C)
T , Temperature ( °C )
C
J
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
Case(Bottom)Temperature
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFH5302PbF
7
6
5
4
3
2
1
600
500
400
300
200
100
0
I
I
= 50A
D
D
TOP
8.7A
16A
BOTTOM 50A
T = 125°C
J
T = 25°C
J
0
5
10
15
20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
Ω
0.01
t
p
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
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Fig 15b. Switching Time Waveforms
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IRFH5302PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
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IRFH5302PbF
PQFN 5x6 Outline "B" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136:
http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
XXXXX
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRFH5302PbF
PQFN 5x6 Outline "B" Tape and Reel
Qualification information†
Industrial††
(per JEDEC JES D47F ††† guidelines )
MS L 1
Qualification level
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(per JEDEC J-ST D-020D†††
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.14mH, RG = 25Ω, IAS = 50A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production
test capability.
Revision History
Date
Comment
Idss limits at Tj 25°C is changed to 500µA max, Vds = 24V and at Tj 125°C it is changed to 5.0mA
max, Vds = 24V. All other parameters remain unchanged.
Updated ordering information to reflect the End-Of-Life (EOL) of the mini-reel option (EOL notice #259).
Updated data sheet with the new IR corporate template.
•
3/31/2010
1/6/2014
•
•
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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