IRFH7182PBF_15 [INFINEON]
Optimized for Secondary Side Synchronous Rectification;
| 型号： | IRFH7182PBF_15 |
| 厂家： | 
Infineon |
| 描述： | Optimized for Secondary Side Synchronous Rectification |
| 文件： | 总8页 (文件大小：541K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FastIRFET™
IRFH7182PbF
HEXFET® Power MOSFET
VDSS
100
V
RDS(on) max
(@ VGS = 10V)
3.9
m
Qg (typical)
Rg (typical)
49
nC
0.9
ID
157
A
(@TC (Bottom) = 25°C)
PQFN 5X6 mm
Applications
Optimized for Secondary Side Synchronous Rectification
Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies
Hot Swap and Active O-Ring
BLDC Motor Drive
Features
Low RDS(ON) (<3.9m)
Benefits
Lower Conduction Losses
Low Thermal Resistance to PCB (<0.64°C/W)
100% Rg Tested
Increased Power Density
Increased Reliability
Low Profile (<1.05 mm)
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
results in
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1
Environmentally Friendlier
Increased Reliability
Base part number
Package Type
Standard Pack
Orderable Part Number
IRFH7182TRPbF
Form
Quantity
4000
IRFH7182PbF
PQFN 5mm x 6 mm
Tape and Reel
Absolute Maximum Ratings
Parameter
Gate-to-Source Voltage
Max.
Units
VGS
± 20
23
V
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
157
A
99
320
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Power Dissipation
4.0
W
Power Dissipation
195
Linear Derating Factor
0.03
W/°C
°C
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Notes through are on page 8
1
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IRFH7182PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
100
–––
–––
2.0
Typ.
–––
62
Max. Units
–––
––– mV/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
BVDSS
BVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
V
3.1
3.9
3.6
VGS = 10V, ID = 50A
VDS = VGS, ID = 250µA
m
V
–––
-5.3
–––
–––
–––
–––
49
9.3
3.1
15.8
21
19
160
0.9
6.1
6.2
15
–––
–––
–––
–––
135
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– mV/°C
1.0
100
-100
–––
74
VDS = 80V, VGS = 0V
VGS = 20V
µA
nA
S
IGSS
V
V
GS = -20V
DS = 25V, ID = 50A
gfs
Qg
V
V
DS = 50V
GS = 10V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
ID = 50A
nC VDS = 50V, VGS = 0V
VDD = 50V, VGS = 10V
ns ID = 50A
RG = 1.0
Gate Resistance
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
5.3
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3120
1440
14
VGS = 0V
pF
VDS = 50V
ƒ = 1.0MHz
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
–––
–––
157
MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
A
G
ISM
–––
–––
320
S
VSD
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
0.8
65
113
1.3
98
170
V
TJ = 25°C, IS= 50A, VGS=0V
ns TJ = 25°C, IF = 50A, VDD = 50V
nC
di/dt = 100A/µs
Avalanche Characteristics
Parameter
EAS (Thermally limited) Single Pulse Avalanche Energy
IAR Avalanche Current
Typ.
–––
–––
Max.
728
38
Units
mJ
A
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
0.64
15
Units
Junction-to-Case
RJC (Bottom)
RJC (Top)
RJA
°C/W
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
31
19
RJA (<10s)
2
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IRFH7182PbF
1000
100
10
1000
100
10
VGS
15V
10V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 150°C
1
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 50A
D
V
= 10V
GS
T = 150°C
J
T = 25°C
J
1
V
= 50V
DS
60µs PULSE WIDTH
0.1
2
3
4
5
6
-60 -40 -20
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
14
100000
10000
1000
100
V
= 0V,
f = 1 MHZ
GS
I = 50A
D
C
C
C
= C + C , C
SHORTED
iss
gs
gd
ds
12
= C
V
V
V
= 80V
DS
= 50V
DS
= 20V
DS
rss
oss
gd
= C + C
ds
gd
10
8
C
oss
C
iss
6
C
rss
4
2
0
10
0
10
20
30
40
50
60
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
DS
G
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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IRFH7182PbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100µsec
1msec
T = 150°C
J
T = 25°C
1
J
10msec
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
DC
V
= 0V
GS
1.0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1
10
100
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4.0
3.5
3.0
2.5
2.0
1.5
160
140
120
100
80
60
I
= 250µA
= 1.0mA
= 1.0A
D
I
40
D
I
D
20
0
-75 -50 -25
0
25 50 75 100 125 150
25
50
75
100
125
150
T , Temperature ( °C )
T
, Case Temperature (°C)
J
C
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage vs. Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFH7182PbF
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 12. Typical Avalanche Current vs. Pulse Width
3000
12
11
10
9
I
D
I
= 50A
D
TOP
12A
24A
2500
2000
1500
1000
500
BOTTOM 38A
8
7
T
T
= 125°C
6
J
5
4
= 25°C
J
3
0
2
25
50
75
100
125
150
4
6
8
10 12 14 16 18 20
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. On–Resistance vs. Gate Voltage
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
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IRFH7182PbF
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
t
p
I
AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 19. Gate Charge Waveform
Fig 18. Gate Charge Test Circuit
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IRFH7182PbF
PQFN 5x6 Outline "F" Package Details
C
C
L
L
C
C
L
L
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "F" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
XXXXX
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRFH7182PbF
PQFN 5x6 Outline "F" Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
CODE
Ao
DESCRIPTION
Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness
Overall width of the carrier tape
Bo
Ko
W
P
1
Pitch between successive cavity centers
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Note: All dimension are nominal
Package
Type
Reel
Diameter
(Inch)
QTY
Reel
Width
W1
Ao
Bo
Ko
P1
W
Pin 1
(mm)
(mm)
(mm)
(mm)
(mm)
Quadrant
(mm)
5 X 6 PQFN
13
4000
12.4
6.300
5.300
1.20
8.00
12
Q1
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualifiction Information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification Level
MSL1
PQFN 5mm x 6mm
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1mH, RG = 50, IAS = 38A.
Pulse width 400µs; duty cycle 2%.
R is measured at TJ of approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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