IRFH8324TRPBF [INFINEON]
HEXFETPower MOSFET; ?? HEXFET功率MOSFET
| 型号： | IRFH8324TRPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFETPower MOSFET |
| 文件： | 总9页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97651C
IRFH8324PbF
HEXFET® Power MOSFET
VDS
30
V
V
Vgs max
± 20
RDS(on) max
(@VGS = 10V)
4.1
m
Ω
(@VGS = 4.5V)
6.3
14
Qg typ.
nC
A
PQFN 5X6 mm
ID
50
(@Tc(Bottom) = 25°C)
Applications
• Synchronous MOSFET for high frequency buck converters
FeaturesandBenefits
Features
Benefits
Low Thermal Resistance to PCB (< 2.3°C/W)
Low Profile (<1.2mm)
Enable better thermal dissipation
results in Increased Power Density
Industry-Standard Pinout
Multi-Vendor Compatibility
Easier Manufacturing
⇒
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
Standard Pack
Form
Tape and Reel
Tape and Reel
Note
Quantity
4000
IRFH8324TRPBF
IRFH8324TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
400
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
30
± 20
23
V
V
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
I
I
I
I
I
I
@ TA = 25°C
D
D
D
D
D
@ TA = 70°C
18
90
57
50
@ TC(Bottom) = 25°C
@ TC(Bottom) = 100°C
@ TC = 25°C
A
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
200
3.6
54
DM
Power Dissipation
P
P
@TA = 25°C
D
D
W
Power Dissipation
@TC(Bottom) = 25°C
0.029
-55 to + 150
Linear Derating Factor
Operating Junction and
W/°C
°C
T
T
J
Storage Temperature Range
STG
Notes through are on page 9
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1
03/30/12
IRFH8324PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250μA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
4.1
V
ΔΒVDSS/ΔTJ
RDS(on)
––– 0.019
V/°C Reference to 25°C, ID = 1.0mA
–––
–––
1.35
–––
–––
–––
–––
–––
72
3.3
5.0
1.8
-6.2
–––
–––
–––
–––
–––
31
VGS = 10V, ID = 20A
mΩ
6.3
VGS = 4.5V, ID = 16A
VGS(th)
Gate Threshold Voltage
2.35
V
VDS = VGS, ID = 50μA
Δ
VGS(th)
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
1.0
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 24V, VGS = 0V
μA
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
VGS = 20V
nA
S
VGS = -20V
gfs
Qg
Qg
VDS = 10V, ID = 20A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC VGS = 10V, VDS = 15V, ID = 20A
Total Gate Charge
14
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
4.4
2.2
3.5
3.9
5.7
13
VDS = 15V
Qgs2
Qgd
VGS = 4.5V
nC
ID = 20A
Qgodr
Qsw
Qoss
RG
nC VDS = 16V, VGS = 0V
Ω
Gate Resistance
1.1
13
–––
–––
td(on)
tr
td(off)
tf
Turn-On Delay Time
VDD = 15V, VGS = 4.5V
Rise Time
26
–––
–––
–––
–––
–––
–––
ID = 20A
ns
Ω
RG=1.8
Turn-Off Delay Time
14
Fall Time
8.5
2380
500
205
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
pF
Output Capacitance
VDS = 10V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
94
20
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
MOSFET symbol
–––
–––
50
showing the
integral reverse
(Body Diode)
Pulsed Source Current
A
G
ISM
–––
–––
200
S
p-n junction diode.
(Body Diode)
VSD
trr
T = 25°C, I = 20A, V = 0V
Diode Forward Voltage
–––
–––
–––
–––
16
1.0
24
38
V
J
S
GS
T = 25°C, I = 20A, VDD = 15V
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns
nC
J
F
Qrr
ton
di/dt = 360 A/μs
25
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
2.3
32
Units
Junction-to-Case
RθJC (Bottom)
RθJC (Top)
RθJA
Junction-to-Case
°C/W
Junction-to-Ambient
Junction-to-Ambient
35
RθJA (<10s)
23
2
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IRFH8324PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
7.0V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
7.0V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
BOTTOM
BOTTOM
2.5V
2.5V
1
60μs PULSE WIDTH
Tj = 150°C
≤
60μs PULSE WIDTH
Tj = 25°C
≤
0.1
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
1.8
I
= 20A
D
V
= 10V
GS
1.6
1.4
1.2
1.0
0.8
0.6
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
≤
60μs PULSE WIDTH
1.0
1
2
3
4
5
6
7
8
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
10000
1000
100
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 20A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
12.0
= C
rss
oss
gd
= C + C
V
V
V
= 24V
= 15V
= 6.0V
DS
DS
DS
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
C
C
iss
oss
C
rss
1
10
, Drain-to-Source Voltage (V)
100
0
5
10 15 20 25 30 35 40
Q , Total Gate Charge (nC)
V
DS
G
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRFH8324PbF
1000
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
T = 150°C
100μsec
J
1msec
Limited by
Source Bonding
Technology
T = 25°C
J
10msec
DC
1
Tc = 25°C
Tj = 150°C
V
= 0V
GS
Single Pulse
1.0
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
, Source-to-Drain Voltage (V)
0
1
10
100
V
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
90
2.6
Limited By Source
Bonding Technology
80
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
70
60
50
40
30
20
10
0
I
I
I
I
= 50μA
= 250μA
= 1.0mA
= 1.0A
D
D
D
D
-75 -50 -25
0
25 50 75 100 125 150
25
50
T
75
100
125
150
, Case Temperature (°C)
T , Temperature ( °C )
J
C
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
Case(Bottom)Temperature
10
D = 0.50
1
0.1
0.20
0.10
0.05
0.02
0.01
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFH8324PbF
12
11
10
9
400
350
300
250
200
150
100
50
I
I
= 20A
D
D
TOP
4.9A
9.4A
BOTTOM 20A
8
7
6
T
= 125°C
J
5
4
3
T
= 25°C
J
2
0
0
5
10
15
20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
Ω
0.01
t
p
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
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5
IRFH8324PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
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IRFH8324PbF
PQFN 5x6 Outline "E" Package Details
For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "E" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
XYWWX
XXXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRFH8324PbF
PQFN 5x6 Outline "E" Tape and Reel
NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts.
REEL DIMENSIONS
STANDARD OPTION (QTY 4000)
TTRR12 OPTION (QTY 400)
METRIC
MAX
IMPERIAL
METRIC
MAX
178.5
21.5
13.8
2.3
IMPERIAL
MIN
MIN
MAX
7.028
0.846
0.543
0.091
2.598
CODE
MIN
MAX
13.011 177.5
MIN
A
B
C
D
E
F
12.972
0.823
0.504
0.067
3.819
6.988
0.823
0.520
0.075
2.350
329.5 330.5
20.9
12.8
1.7
0.846
0.532
0.091
3.898
20.9
13.2
1.9
21.5
13.5
2.3
97
99
65
66
Ref
13
17.4
14.5
Ref
13
12
G
0.512
0.512
0.571
0.571
14.5
8
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IRFH8324PbF
Qualification information†
Cons umer††
(per JE DE C JE S D47F ††† guidelines )
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(per JE DE C J-S TD-020D†††
Yes
)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.47mH, RG = 50Ω, IAS = 20A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature.
Current is limited to 50A by source bonding technology.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 03/2012
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9
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