IRFHM8334PBF_15 [INFINEON]
Compatible with Existing Surface Mount Techniques;
| 型号： | IRFHM8334PBF_15 |
| 厂家： | 
Infineon |
| 描述： | Compatible with Existing Surface Mount Techniques |
| 文件： | 总9页 (文件大小：252K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFHM8334TRPbF
HEXFET® Power MOSFET
VDS
30
V
V
VGS max
± 20
RDS(on) max
(@VGS = 10V)
(@VGS = 4.5V)
9.0
m
13.5
7.1
Qg typ.
nC
A
ID
PQFN 3.3 X 3.3 mm
25
(@Tc(Bottom) = 25°C)
Applications
• Control MOSFET for high frequency buck converters
Features
Benefits
Low Thermal Resistance to PCB (< 4.5°C/W)
Low Profile (<1.2mm)
Enable better thermal dissipation
Increased Power Density
Industry-Standard Pinout
results in Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
⇒
Easier Manufacturing
RoHS Compliant, Halogen-Free
MSL1, Consumer Qualification
Environmentally Friendlier
Increased Reliability
Base Part Number
Package Type
Standard Pack
Orderable Part Number
IRFHM8334TRPBF
Form
Tape and Reel
Quantity
IRFHM8334PBF
PQFN 3.3mm x 3.3mm
4000
Absolute Maximum Ratings
Parameter
Max.
± 20
13
Units
V
V
Gate-to-Source Voltage
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
I
I
I
@ TA = 25°C
D
D
D
43
@ TC(Bottom) = 25°C
@ TC(Bottom) = 100°C
27
A
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
25
I
I
@ TC = 25°C
D
176
2.7
28
DM
P
P
@TA = 25°C
Power Dissipation
Power Dissipation
D
D
W
@TC(Bottom) = 25°C
Linear Derating Factor
Operating Junction and
0.021
W/°C
°C
T
T
-55 to + 150
J
Storage Temperature Range
STG
Notes through are on page 9
1
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IRFHM8334TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250μA
BVDSS
ΔΒ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
44
–––
–––
–––
9.0
V
Δ
V
DSS/ TJ
21
mV/°C Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 20A
RDS(on)
7.2
11.2
1.8
-6.6
–––
–––
–––
–––
–––
15
Ω
m
13.5
2.35
–––
1.0
VGS = 4.5V, ID = 16A
VDS = VGS, ID = 25μA
VGS(th)
Gate Threshold Voltage
V
Δ
VGS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
mV/°C
μA
IDSS
VDS = 24V, VGS = 0V
150
100
-100
–––
–––
11
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
VGS = 20V
nA
S
VGS = -20V
gfs
Qg
Qg
VDS = 10V, ID = 20A
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC VGS = 10V, VDS = 15V, ID = 20A
Total Gate Charge
7.1
2.5
1.0
2.3
1.3
3.3
5.7
1.2
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
–––
–––
–––
–––
–––
–––
VDS = 15V
Qgs2
Qgd
VGS = 4.5V
nC
I
D = 20A
Qgodr
Gate Charge Overdrive
Qsw
Switch Charge (Qgs2 + Qgd
Output Charge
)
Qoss
RG
nC
V
V
DS = 16V, VGS = 0V
Gate Resistance
Ω
–––
–––
–––
–––
–––
–––
–––
–––
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
8.3
14
DD = 30V, VGS = 4.5V
ID = 20A
ns
Turn-Off Delay Time
Fall Time
7.0
RG=1.8Ω
4.6
1180
260
110
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VGS = 0V
pF
V
DS = 10V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
Max.
35
Units
Single Pulse Avalanche Energy
EAS
mJ
Diode Characteristics
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
–––
–––
25
(Body Diode)
showing the
G
A
ISM
Pulsed Source Current
integral reverse
S
–––
–––
176
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
–––
–––
–––
–––
13
1.0
20
29
V
T
T
= 25°C, I = 20A, V
= 0V
GS
J
J
S
ns
= 25°C, I = 20A, VDD = 15V
F
Qrr
Reverse Recovery Charge
19
nC di/dt = 380 A/μs
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
Units
Junction-to-Case
RθJC (Bottom)
RθJC (Top)
RθJA
4.5
44
47
30
Junction-to-Case
°C/W
Junction-to-Ambient
Junction-to-Ambient
RθJA (<10s)
2
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IRFHM8334TRPbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
7.0V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
7.0V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
BOTTOM
BOTTOM
1
2.5V
1
0.1
0.01
2.5V
60μs PULSE WIDTH
Tj = 150°C
≤
60μs PULSE WIDTH
Tj = 25°C
≤
0.1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 20A
D
V
= 10V
GS
100
10
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
≤
60μs PULSE WIDTH
1.0
1
2
3
4
5
6
7
8
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
10000
1000
100
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 20A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
12.0
= C
rss
oss
C
gd
= C + C
V
V
V
= 24V
= 15V
= 6.0V
DS
DS
DS
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
iss
C
C
oss
rss
10
1
10
100
0
2
4
6
8
10 12 14 16 18 20
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
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IRFHM8334TRPbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100μsec
1msec
T
= 150°C
J
Limited by
package
1
T
= 25°C
J
10msec
DC
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
1.4
GS
1.0
0.1
1
10
100
0.2
0.4
V
0.6
0.8
1.0
1.2
1.6
V
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
2.8
50
Limited By Source
Bonding Technology
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
40
30
20
10
0
I
I
I
I
= 25μA
= 250μA
= 1.0mA
= 1.0A
D
D
D
D
25
50
T
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
, Case Temperature (°C)
T , Temperature ( °C )
C
J
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
Case(Bottom)Temperature
10
D = 0.50
1
0.1
0.20
0.10
0.05
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFHM8334TRPbF
30
25
20
15
10
5
160
140
120
100
80
I
I
= 20A
D
D
TOP
4.3A
9.0A
BOTTOM 20A
60
T
= 125°C
J
40
T
= 25°C
20
J
0
0
5
10
15
20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
Ω
0.01
t
p
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
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Fig 15b. Switching Time Waveforms
5
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IRFHM8334TRPbF
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
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IRFHM8334TRPbF
PQFN 3.3mm x 3.3mm Outline Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application
noteAN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application noteAN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 3.3mm x 3.3mm Outline Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
7
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IRFHM8334TRPbF
PQFN 3.3mm x 3.3mm Outline Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
DIMENSION (MM)
DIMENSION (INCH)
CODE
Ao
MIN
3.50
3.50
1.10
7.90
11.80
12.30
MAX
3.70
MIN
.138
.138
.043
.311
.465
.484
MAX
.146
.146
.051
.319
.480
.492
3.70
Bo
1.30
Ko
8.10
P
1
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
12.20
12.50
W
W
1
Qty
4000
13 I nches
Reel Diameter
CODE
DESCRIPTION
Ao
Bo
Ko
W
Dimens ion des ign to accommodate the component width
Dimension design to accommodate the component lenght
Dimension des ign to accommodate the component thickness
Overall width of the carrier tape
P
1
Pitch between s ucces s ive cavity centers
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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June 5, 2014
IRFHM8334TRPbF
Qualification information†
Cons umer ††
(per JEDEC JESD47F ††† guidelines )
MS L 1
(per JEDEC J-STD-020D†††
Qualification level
Moisture Sensitivity Level
RoHS compliant
PQFN 3.3mm x 3.3mm
)
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
Notes:
Starting TJ = 25°C, L = 0.18mH, RG = 50Ω, IAS = 20A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
ꢀ Calculated continuous current based on maximum allowable junction temperature.
Current is limited to 25A by source bonding technology.
Revision History
Date
Comment
•
•
Updated schematic on page1
Updated Tape and Reel on page 8.
6/5/2014
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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June 5, 2014
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