IRFI1010N [INFINEON]
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=49A); 功率MOSFET （ VDSS = 55V ， RDS（ON） = 0.012ohm ，ID = 49A ）
| 型号： | IRFI1010N |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=49A) |
| 文件： | 总8页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1373A
IRFI1010N
HEXFET® Power MOSFET
l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS ꢀ
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 0.012Ω
ID = 49A
G
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor, providesthedesignerwithanextremelyefficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
49
35
A
290
PD @TC = 25°C
Power Dissipation
58
W
W/°C
V
Linear Derating Factor
0.38
± 20
360
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
43
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
5.8
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
2.6
Units
RθJC
RθJA
°C/W
Junction-to-Ambient
–––
65
8/25/97
IRFI1010N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 0.012
Ω
V
S
VGS = 10V, ID = 26A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 43A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
2.0
30
––– 4.0
––– –––
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 130
––– ––– 23
––– ––– 53
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 43A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
11 –––
66 –––
40 –––
46 –––
VDD = 28V
ID = 43A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 3.6Ω
RD = 0.62Ω, See Fig. 10
Between lead,
6mm (0.25in.)
D
4.5
7.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
nH
pF
G
from package
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
C
Input Capacitance
––– 2900 –––
––– 880 –––
––– 330 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Drain to Sink Capacitance
ƒ = 1.0MHz, See Fig. 5
ƒ = 1.0MHz
–––
12 –––
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– ––– 49
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– 290
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.3
––– 81 120
––– 240 370
V
TJ = 25°C, IS = 26A, VGS = 0V
ns
TJ = 25°C, IF = 43A
Qrr
nC di/dt = 100A/µs
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 390µH
RG = 25Ω, IAS = 43A. (See Figure 12)
ꢀ t=60s, ƒ=60Hz
Uses IRF1010N data and test conditions
ISD ≤ 43A, di/dt ≤ 260A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
IRFI1010N
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
BOTT OM 4.5V
4.5V
20µs P ULSE WIDTH
4.5V
20µs PULSE W IDTH
T
= 175°C
T
= 25°C
C
C
A
A
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
D S
D S
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1 0 0 0
1 0 0
1 0
3. 0
I
= 72A
D
2. 5
2. 0
1. 5
1. 0
0. 5
0. 0
TJ = 25°C
T
= 175°C
J
V
= 25V
DS
20µs P ULSE W ID TH
V
= 10V
GS
1
1 0 A
A
4
5
6
7
8
9
- 6 0 - 4 0 - 2 0
0
2 0
4 0
6 0
8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
VG S , Ga te-to-So urce Voltage (V )
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
IRFI1010N
5000
20
16
12
8
V
C
C
C
= 0V,
f = 1M Hz
I
= 43A
D
GS
iss
= C
= C
= C
+ C
+ C
,
C
ds
SHORTE D
gs
gd
ds
gd
V
V
= 44V
= 28V
DS
DS
rss
o ss
C
C
is s
g d
4000
3000
2000
1000
0
o s s
C
rs s
4
FOR TES T CIRCUIT
SEE FIGURE 13
0
A
A
1
10
100
0
20
40
60
80
100
120
140
VD S , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1 0 0 0
1 0 0
1 0
1000
100
10
OPE RATION IN THIS A RE A LIMITE D
BY R
D S(o n)
10µs
100µs
T
= 175°C
J
1m s
T
= 25°C
J
10m s
T
T
= 25°C
= 175°C
S ingle Pulse
C
J
V
= 0V
GS
A
1
A
0. 4
0. 8
1. 2
1. 6
2. 0
2. 4
2. 8
1
10
100
V
, Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRFI1010N
RD
VDS
50
40
30
20
10
0
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
10%
°
, Case Temperature ( C)
T
C
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.1
t
0.02
1
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T = P
J
x Z
+ T
C
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFI1010N
1000
800
600
400
200
0
I
D
TOP
18A
31A
15 V
BOTTOM 43A
D R IVER
L
V
D S
D .U .T
A S
R
+
G
V
D D
-
I
A
20V
Ω
0 .0 1
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
V
= 25V
50
D D
A
175
t
p
25
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
IRFI1010N
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRFI1010N
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
10.60 (.417 )
10.40 (.409 )
3 .40 (.1 33)
3 .10 (.1 23)
4.80 (.189 )
4.60 (.181 )
ø
2.80 (.110)
2.60 (.102)
-
A
-
3.7 0 (.145)
3.2 0 (.126)
L EA D AS SIGN M EN T S
1
2
3
-
-
-
GA T E
7.10 (.280 )
6.70 (.263 )
D R AIN
SO U R C E
16 .0 0 (.630)
15 .8 0 (.622)
1.15 (.045)
M IN .
NO T ES :
1
D IM E N SION IN G & T O LER AN C IN G
PE R A N SI Y1 4.5M , 1982
1
2
3
2
C O N T R OLL IN G D IM EN SION : IN C H .
3.30 (.130)
3.10 (.122)
-
B
-
13 .7 0 (.540)
13 .5 0 (.530)
C
D
A
B
0.48 (.019 )
0.44 (.017 )
0.90 (.035 )
3X
0.70 (.028 )
3X
1.40 (.05 5)
1.05 (.04 2)
3X
2.85 (.1 12)
2.65 (.1 04)
0.25 (.010)
A
M
B
M
M IN IM U M C R E EP AG E
D IST A N C E B ET W E EN
A -B -C -D = 4.80 (.189 )
2 .5 4 (.100)
2X
Part Marking Information
TO-220 Fullpak
E
X
A
M
P
LE
LOT CODE E401
:
TH
IT
I
H
S
IS
A
S
A
S
E
N
M
I
R
F
I
840G
W
A
PART NUMBER
INTERNATIONAL
RECTIFIER
IRFI840G
LOGO
E401
9 24 5
ASSEMBLY
DATECODE
OT CODE
L
(YYW W )
YY
= YEAR
W W W EEK
=
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
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