IRFI1310G [INFINEON]
Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=22A); 功率MOSFET （ VDSS = 100V ， RDS（ON） = 0.04ohm ，ID = 22A ）
| 型号： | IRFI1310G |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=22A) |
| 文件： | 总8页 (文件大小：323K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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PD - 9.1222
IRFI1310G
HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
IsolatedPackage
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Repetitive Avalanche Rated
175°C Operating Temperature
VDSS = 100V
RDS(on) = 0.04Ω
ID = 22A
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a high
isolation capability and a low thermal resistance between the tab and external
heatsink. This isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip
or by a single screw fixing.
Absolute Maximum Ratings
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Collector Current, VGS @ 10V
Pulsed Drain Current
Max.
22
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
15
A
88
PD @TC = 25°C
Power Dissipation
48
0.32
W
W/°C
V
Linear Derating Factor
VGS
EAS
IAR
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy
Avalanche Current
120
mJ
A
22
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
4.8
mJ
V/ns
5.5
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient
Min.
––––
Typ.
––––
––––
Max.
3.1
Units
RθJC
RθJA
°C/W
65
––––
To Order
Revision 0
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IRFI1310G
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
100 ––– –––
––– 0.10 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.04
2.0 ––– 4.0
12 ––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 110
––– ––– 18
––– ––– 42
––– 13 –––
––– 77 –––
––– 82 –––
––– 64 –––
Ω
V
S
VGS = 10V, ID = 13A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 25A
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -20V
Qg
ID = 25A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
ns
VDS = 80V
VGS = 10V, See Fig. 6 and 13
VDD = 50V
ID = 25A
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 9.1Ω
RD = 2.0Ω, See Fig. 10
Between lead,
LD
LS
Internal Drain Inductance
Internal Source Inductance
––– 4.5 –––
––– 7.5 –––
6mm (0.25in.)
nH
pF
from package
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 2500 –––
––– 630 –––
––– 130 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
––– –––
22
showing the
A
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– –––
88
p-n junction diode.
TJ = 25°C, IS = 13A, VGS = 0V
TJ = 25°C, IF = 25A
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 2.5
––– 140 210
––– 0.79 1.2
V
ns
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
t=60s, ƒ=60Hz
I
SD ≤ 25A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
VDD = 25V, starting TJ = 25°C, L = 1.0mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 13A. (See Figure 12)
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IRFI1310G
100 0
10 0
1 0
1000
VGS
VGS
15V
TOP
15V
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
100
10
1
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
= 25°C
T
C
= 175°C
C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics,
Fig 2. Typical Output Characteristics,
TC = 25oC
TC = 175oC
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
100
10
I
= 25A
D
T
= 25°C
J
T
= 175°C
J
V
= 50V
D S
V
GS
= 10V
20µ s PULS E W ID TH
1
-6 0 -4 0 -20
0
20 40 60 80 100 120 140 160 180
4
5
6
7
8
9
1 0
T
J
, Junction Temperature (°C)
V
, G ate-to-Source V oltage (V)
G S
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRFI1310G
4000
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
I
= 25A
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
V
V
V
= 80V
= 50V
= 20V
gs
gd
ds
DS
DS
DS
= C
gd
= C + C
ds
gd
3000
2000
1000
0
C
iss
C
C
oss
4
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
30
60
90
120
V
, Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 175°C
J
100µs
1ms
T = 25°C
J
10ms
T
T
= 25°C
= 175°C
C
J
100ms
Single Pulse
V
GS
= 0V
1
1
1
10
100
1000
0
0.5
1
1.5
2
2.5
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRFI1310G
RD
VDS
VGS
25
20
15
10
5
D.U.T.
RG
VDD
10 V
Pulse Width≤ 1 µs
Duty Factor≤ 0.1 %
Fig 10a. Switching Time Test Circuit
0
25
50
75
100
125
150
175
T
C
, Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
D
= 0.50
0.20
1
0.10
0.05
0.1
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERM AL RESPONSE)
0.01
t
2
Notes:
1. Duty factor D =
t
/ t
2
1
2. Peak T = P
x Z
+ T
C
D M
J
thJ C
1
0.001
0.00001
0.0001
0.001
0.01
0.1
10
t1 , Rectangular P ulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFI1310G
10 V
Index
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300
250
200
150
100
50
I
D
TOP
5.3A
9.2A
BOTTOM 13A
Fig 12a. Unclamped Inductive Test Circuit
V
DD
= 25V
0
25
50
75
100
125
150
175
Starting T , Juntion Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
10 V
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
Appendix A:Figure 14, Peak Diode Recovery dv/dt Test Circuit
Appendix B:Package Outline Mechanical Drawing
Appendix C:Part Marking Information
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IRFI1310G
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
D.U.T
• Low Leakage Inductance
Current Transformer
RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
*
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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IRFI1310G
Package Outline
TO-220 Full-Pak
Part Marking Information
TO-220 Full-Pak
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145
10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR
SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371
Data and specifications subject to change without notice.
To Order
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