IRFI260 [INFINEON]

TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A*); 晶体管N沟道（ VDSS = 200V ， RDS（ON） = 0.060ohm ，ID = 45A * ）


型号：	IRFI260
厂家：	Infineon
描述：	TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A) 晶体管N沟道（ VDSS = 200V ， RDS（ON） = 0.060ohm ，ID = 45A ）晶体晶体管功率场效应晶体管局域网
文件：	总4页 (文件大小：111K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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Provisional Data Sheet No. PD 9.809

HEXFET^®TRANSISTOR

IRFI260

N-CHANNEL

Product Summary

200Volt, 0.060Ω, HEXFET

Part Number

BVDSS

RDS(on)

HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transis-

tors. The efficient geometry design achieves very

low on-state resistance combined with high trans-

conductance.

IRFI260

200V

0.060Ω

45A*

Features:

Hermetically Sealed

Electrically Isolated

Simple Drive Requirements

Ease of Paralleling

Ceramic Eyelets

HEXFET transistors also feature all of the well-es-

tablished advantages of MOSFETs, such as voltage

control, very fast switching, ease of paralleling and

electrical parameter temperature stability. They are

well-suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio

amplifiers, high energy pulse circuits and virtually

any application where high reliability is required.

The HEXFET transistor’s totally isolated package

eliminates the need for additional isolating material

between the device and the heatsink. This improves

thermal efficiency and reduces drain capacitance.

Absolute Maximum Ratings

Parameter

= 10V, T = 25°C Continuous Drain Current

IRFI260

45*

Units

@ V

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

180

@ T = 25°C

300

W/K ꢀ

2.4

±20

Single Pulse Avalanche Energy

Avalanche Current

700

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

dv/dt

4.3

V/ns

-55 to 150

^oC

Storage Temperature Range

STG

Lead Temperature

Weight

300 (0.063 in. (1.6mm) from case for 10 sec.)

10.9 (typical)

* I current limited by pin diameter

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IRFI260 Device

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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min. Typ. Max. Units

Test Conditions

Drain-to-Source Breakdown Voltage

200

—

= 0V, I = 1.0 mA

DSS

∆BV

/∆T Temp. Coefficient of Breakdown Voltage

—

0.24

—

0.060

V/°C Reference to 25°C, I = 1.0 mA

DSS

Static Drain-to-Source

= 10V, I =29A

GS D

DS(on)

Ω

On-State Resistance

—

2.0

—

0.068

4.0

—

= 10V, I = 45A

GS D

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

= V , I = 250µA

GS(th)

S (

)

≥ 15V, I

= 29A

=0.8 x Max Rating,V =0V

DS GS

DSS

µA

—

250

= 0.8 x Max Rating

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

8.7

100

-100

230

= 20V

GSS

= -20V

=10V, I = 45A

GS D

= Max. Rating x 0.5

Gate-to-Source Charge

Gate-to-Drain (“Miller”) Charge

Turn-On Delay Time

110

d(on)

= 100V, I =45A,

DD D

= 2.35Ω, V

Rise Time

120

110

=10V

Turn-Off Delay Time

d(off)

FallTime

Measured from the

drain lead, 6mm (0.25

in.) from package to

center of die.

Internal Drain Inductance

—

Modified MOSFET

symbol showing the

internal inductances.

Measured from the

source lead, 6mm

(0.25 in.) from package

to source bonding pad.

Internal Source Inductance

—

8.7

—

Input Capacitance

—

5100

1100

280

—

= 0V, V

f = 1.0 MHz

= 25V

iss

Output Capacitance

oss

rss

Reverse Transfer Capacitance

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IRFI260 Device

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current (Body Diode)

—

45*

Modified MOSFET symbol showing the

integral reverse p-n junction rectifier.

Pulse Source Current (Body Diode)

180

Diode Forward Voltage

—

1.8

420

4.9

T = 25°C, I = 45A, V

= 0V

Reverse Recovery Time

Reverse Recovery Charge

µC

T = 25°C, I = 45A, di/dt ≤ 100A/µs

≤ 50V

Forward Turn-On Time

Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min. Typ. Max. Units Test Conditions

Junction-to-Case

Junction-to-Ambient

Case-to-Sink

—

0.42

thJC

thJA

thCS

K/W ꢀ

typical socket mount

0.21

—

mounting surface flat, smooth

Repetitive Rating; Pulse width limited by

≤ 45A, di/dt ≤ 130 A/µs,

maximum junction temperature.

≤ BV

, T ≤ 150°C

DSS J

Suggested RG = 2.35Ω

@ V

= 50V, Starting T = 25°C,

= [0.5

Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

(I ) [BV

/(BV

-V )]

DSS

DSS DD

ꢀ K/W = °C/W

Peak I = 45A, V

= 10V, 25 ≤ R ≤ 200Ω

W/K = W/°C

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IRFI260 Device

Case Outline and Dimensions —TO-259AA

LEGEND:

NOTES:

1. Drain

2.. Source

3. Gate

1. Dimensioning and tolerancing per ANSI Y14.5M - 1982.

2. All dimensions in millimeters (inches)

CAUTION

BERYLLIA WARNING PER MIL-PRF-19500

Packages containing beryllia shall not be ground, sandblasted,

machined, or have other operations performed on them which will

produce beryllia or beryllium dust. Furthermore, beryllium oxides

packages shall not be placed in acids that will produce fumes

containing beryllium.

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

7/96

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相关型号：

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IRFI3205

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INFINEON