IRFI3710 [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFI3710 |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1387B
IRFI3710
PRELIMINARY
HEXFET® Power MOSFET
l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS ꢀ
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
D
VDSS = 100V
R
DS(on) = 0.025Ω
G
Description
ID = 32A
FifthGenerationHEXFETsfromInternationalRectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
S
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a low thermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
32
23
A
180
PD @TC = 25°C
Power Dissipation
63
W
W/°C
V
Linear Derating Factor
0.42
± 20
530
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
28
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
6.3
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
–––
Max.
2.4
Units
RθJC
RθJA
°C/W
–––
65
3/16/98
IRFI3710
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.025
Ω
V
S
VGS = 10V, ID = 16A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 28A
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
2.0
20
––– 4.0
––– –––
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 190
––– ––– 26
––– ––– 82
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 28A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 80V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
14 –––
59 –––
58 –––
48 –––
VDD = 50V
ID = 28A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 2.5Ω
RD = 1.7Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5 –––
nH
pF
G
–––
7.5
S
Ciss
Coss
Crss
C
Input Capacitance
––– 3000 –––
––– 640 –––
––– 330 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Drain to Sink Capacitance
ƒ = 1.0MHz, See Fig. 5
ƒ = 1.0MHz
–––
12 –––
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
32
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
180
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 210 320
––– 1.7 2.6
V
TJ = 25°C, IS = 16A, VGS = 0V
ns
TJ = 25°C, IF = 28A
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 1.4mH
RG = 25Ω, IAS = 28A. (See Figure 11)
ꢀ t=60s, ƒ=60Hz
Uses IRF3710 data and test conditions
ISD ≤28A, di/dt ≤ 460A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
IRFI3710
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE W IDTH
20µs PULSE W IDTH
T
= 175°C
T
= 25°C
C
C
1
1
0.1
A
A
100
0.1
1
10
100
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.0
I
= 46A
D
2.5
2.0
1.5
1.0
0.5
0.0
TJ = 25°C
100
10
1
T J = 175°C
VDS = 50V
20µs PULSE W ID TH
V
= 10V
GS
10 A
A
4
5
6
7
8
9
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
VG S , G ate-to-Source Voltage (V )
T
J
, Junction Tem perature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFI3710
20
16
12
8
6000
I
= 28A
V
= 0V,
f = 1M Hz
D
GS
C
C
C
= C
+ C
+ C
,
C
SHORTED
V
V
V
= 80V
= 50V
= 20V
iss
gs
gd
ds
DS
DS
DS
= C
= C
rss
oss
gd
ds
5000
4000
3000
2000
1000
0
gd
C
iss
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
1
10
100
0
40
80
120
160
200
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIM ITED
BY R
DS(on)
10µs
100
10
1
100
10
1
T
= 175°C
J
100µs
T
= 25°C
J
1m s
10m s
T
T
= 25°C
= 175°C
C
J
V
= 0V
G S
Single Pulse
A
A
0.4
0.8
1.2
1.6
2.0
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRFI3710
35
30
25
20
15
10
5
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.01
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
J
x Z
+ T
C
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFI3710
1200
1000
800
600
400
200
0
I
D
TOP
11A
20A
28A
15V
BOTTOM
DRIVER
L
V
D S
D.U .T
R
G
+
V
D D
-
I
A
AS
20V
t
0.01Ω
p
Fig 12a. Unclamped Inductive Test Circuit
V
= 25V
50
DD
A
175
25
75
100
125
150
Starting T , Junction Tem perature (°C)
J
V
(BR )D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRFI3710
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRFI3710
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
10.60 (.417)
10.40 (.409)
3.40 (.133)
3.10 (.123)
4.80 (.189)
4.60 (.181)
ø
2.80 (.110)
2.60 (.102)
- A
-
3.70 (.145)
3.20 (.126)
LEAD ASSIGNMENTS
1 - GATE
7.10 (.280)
6.70 (.263)
2 - DRAIN
3 - SOURCE
16.00 (.630)
15.80 (.622)
1.15 (.045)
MIN.
NOTES:
1
DIMENSIONING & TOLERANCING
PER ANSI Y14.5M , 1982
1
2
3
2
CONTROLLING DIM ENSION: INCH.
3.30 (.130)
3.10 (.122)
- B -
13.70 (.540)
13.50 (.530)
C
D
A
B
0.48 (.019)
0.44 (.017)
0.90 (.035)
3X
0.70 (.028)
3X
1.40 (.055)
1.05 (.042)
3X
2.85 (.112)
2.65 (.104)
0.25 (.010)
A
M
B
M
MINIMUM CREEPAGE
DISTANCE BETW EEN
A-B-C-D = 4.80 (.189)
2.54 (.100)
2X
Part Marking Information
TO-220 Fullpak
EXAM PLE : TH IS IS AN IR FI840G
W ITH ASSEM BLY
A
LOTCO DEE401
PART N UM B ER
INTERN ATIO NAL
IR FI840G
RECTIFIER
LO GO
E401 9245
ASSEM BLY
D ATE CO DE
LOT CO DE
(
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W
W
)
YY
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=
YE AR
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W EE K
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
3/98
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