IRFI644GPBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFI644GPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：1364K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94862
IRFI644GPbF
• Lead-Free
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IRFI644GPbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
E XAMP L E : T H IS IS AN IR F I840G
WIT H AS S E MB L Y
L OT CODE 3432
IN T E R N AT IONAL
AS S E MB L E D ON WW 24 1999
P AR T N U MB E R
IR F I8 40G
R E CT IF IE R
L OGO
924 K
32
IN T H E AS S E MB L Y L IN E "K "
34
DAT E CODE
YE AR 1999
WE E K 24
L IN E
Note: "P" in assembly line
position indicates "Lead-Free"
9
=
AS S E MB L Y
L OT CODE
K
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/03
www.irf.com
7
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
相关型号：
IRFI720G-002
Power Field-Effect Transistor, 2.6A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON
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