IRFI820 [INFINEON]
HEXFET POWER MOSFET; HEXFET功率MOSFET
| 型号： | IRFI820 |
| 厂家： | 
Infineon |
| 描述： | HEXFET POWER MOSFET |
| 文件： | 总7页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
This datasheet has been download from:
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Datasheets for electronics components.
相关型号：
IRFI820-002
Power Field-Effect Transistor, 2.1A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFI820-002PBF
Power Field-Effect Transistor, 2.1A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFI820-003
Power Field-Effect Transistor, 2.1A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFI820-004
Power Field-Effect Transistor, 2.1A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRFI820-005PBF
Power Field-Effect Transistor, 2.1A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFI820-006
Power Field-Effect Transistor, 2.1A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRFI820-010
Power Field-Effect Transistor, 2.1A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFI820-012
Power Field-Effect Transistor, 2.1A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
IRFI820-013
Power Field-Effect Transistor, 2.1A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
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