IRFI830-011PBF [INFINEON]

3.1A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET;
IRFI830-011PBF
型号: IRFI830-011PBF
厂家: Infineon    Infineon
描述:

3.1A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET

局域网 开关 脉冲 晶体管
文件: 总1页 (文件大小:66K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

IRFI830-012

Power Field-Effect Transistor, 3.1A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON

IRFI830-012PBF

Power Field-Effect Transistor, 3.1A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON

IRFI830-013

Power Field-Effect Transistor, 3.1A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON

IRFI830A

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | TO-262AA
ETC

IRFI830ATU

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
FAIRCHILD

IRFI830B

500V N-Channel MOSFET
FAIRCHILD

IRFI830BTU

Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3
FAIRCHILD

IRFI830G

Power MOSFET(Vdss=500V, Rds(on)=1.5ohm, Id=3.1A)
INFINEON

IRFI830G

Power MOSFET
VISHAY

IRFI830GPBF

Power MOSFET
VISHAY

IRFI840

TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.6A I(D) | TO-220AB
ETC

IRFI840-001

Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON