IRFI9640 [INFINEON]
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A); 功率MOSFET （ VDSS = -200V ， RDS（ON） = 0.50ohm ，ID = -6.1A ）
| 型号： | IRFI9640 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A) |
| 文件： | 总6页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
相关型号：
IRFI9640G-002PBF
Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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IRFI9640G-003
Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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IRFI9640G-003PBF
Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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IRFI9640G-004
Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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IRFI9640G-004PBF
Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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IRFI9640G-004PBF
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IRFI9640G-005
Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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IRFI9640G-005PBF
Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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IRFI9640G-006PBF
Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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IRFI9640G-006PBF
Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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