IRFIBE30GPBF [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | IRFIBE30GPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢ Power MOSFET |
| 文件： | 总7页 (文件大小：934K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95649
IRFIBE30GPbF
Lead-Free
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1
7/26/04
IRFIBE30GPbF
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IRFIBE30GPbF
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IRFIBE30GPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig -14 For N Channel HEXFETS
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IRFIBE30GPbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
EXAMP LE: THIS IS AN IRFI840 G
WITH AS S EMBLY
P ART NUMBER
LO T CO DE 3 43 2
INT E RNAT IO NAL
RE CT IF IE R
LO G O
IRFI840G
AS S EMBLED O N WW 24 199 9
IN THE AS S EMBLY LINE "K"
924K
32
34
DATE CO DE
YEAR 9 = 199 9
WEEK 24
Note: "P" in assembly line
position indicates "Lead-Free"
AS S EMBLY
LO T CO DE
LINE K
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/04
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