IRFIZ24N [INFINEON]
Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=14A); 功率MOSFET （ VDSS = 55V ， RDS（ON） = 0.07ohm ，ID = 14A）
| 型号： | IRFIZ24N |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=14A) |
| 文件： | 总8页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1501A
IRFIZ24N
HEXFET® Power MOSFET
l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS ꢀ
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 0.07Ω
G
Description
ID = 14A
FifthGenerationHEXFETsfromInternationalRectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
S
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a low thermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
14
10
A
68
PD @TC = 25°C
Power Dissipation
29
W
W/°C
V
Linear Derating Factor
0.19
VGS
EAS
IAR
Gate-to-Source Voltage
± 20
Single Pulse Avalanche Energy
Avalanche Current
71
mJ
10
2.9
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
5.0
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
5.2
Units
RθJC
RθJA
°C/W
Junction-to-Ambient
–––
65
8/25/97
IRFIZ24N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 0.07
Ω
V
S
VGS = 10V, ID = 7.8A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 10A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
2.0
4.5
––– 4.0
––– –––
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 20
––– ––– 5.3
––– ––– 7.6
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 10A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
ns
VDS = 44V
VGS = 10V, See Fig. 6 and 13
VDD = 28V
–––
–––
–––
–––
4.9 –––
34 –––
19 –––
27 –––
ID = 10A
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 24Ω
RD = 2.6Ω, See Fig. 10
Between lead,
D
4.5
7.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
6mm (0.25in.)
nH
pF
G
from package
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
C
Input Capacitance
––– 370 –––
––– 140 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
65 –––
12 –––
ƒ = 1.0MHz, See Fig. 5
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
14
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
68
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 56 83
––– 120 180
V
TJ = 25°C, IS = 7.8A, VGS = 0V
TJ = 25°C, IF = 10A
ns
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 1.0mH
RG = 25Ω, IAS = 10A. (See Figure 12)
ꢀ t=60s, ƒ=60Hz
Uses IRFZ24N data and test conditions
ISD ≤ 10A, di/dt ≤ 280A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
IRFIZ24N
100
10
1
100
10
1
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
BOTT OM 4.5V
4.5V
4.5V
20µs PULSE W IDTH
20µs P ULSE WIDTH
TJ
TJ
= 175°C
T
= 25°C
C
C
A
A
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
D S
D S
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3. 0
2. 5
2. 0
1. 5
1. 0
0. 5
0. 0
1 0 0
1 0
1
I
= 17A
D
T
J
= 25°C
TJ = 175°C
V
= 25V
DS
V
= 10V
GS
20µs P ULSE W ID TH
A
1 0 A
- 6 0 - 4 0 - 2 0
0
2 0
4 0
6 0
8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
4
5
6
7
8
9
TJ , Junction Tem perature (°C)
VG S , Ga te-to-So urce Voltage (V )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFIZ24N
20
16
12
8
700
I
= 10A
V
C
C
C
= 0V ,
f = 1MH z
D
GS
= C
+ C
+ C
,
C
ds
SHORTED
V
V
= 44V
= 28V
iss
gs
g d
DS
DS
= C
g d
600
500
400
300
200
100
0
rss
= C
oss
ds
gd
C
C
iss
o s s
C
rss
4
FOR TES T CIRCUIT
SEE FIGURE 13
0
A
A
0
4
8
12
16
20
1
10
100
VD S , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1 0 0
1000
100
10
OPE RATION IN THIS A RE A LIMITE D
BY R
D S(o n)
T
= 175°C
J
T
= 25°C
J
10µs
1 0
100µs
1m s
T
T
= 25°C
= 175°C
C
J
S ingle Pulse
V
= 0V
10m s
G S
1
A
1
A
0. 4
0. 6
0. 8
1. 0
1. 2
1. 4
1. 6
1. 8
2. 0
1
10
100
V
, Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRFIZ24N
15
10
5
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
D = 0.50
0.20
1
0.10
0.05
0.02
0.01
SINGLE PULSE
P
DM
(THERMAL RESPONSE)
0.1
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T = P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFIZ24N
140
120
100
80
L
I
D
V
DS
TOP
4.2A
7.2A
BOTTOM 10A
D.U.T.
R
G
+
-
V
DD
I
5.0 V
AS
t
p
0.01Ω
60
Fig 12a. Unclamped Inductive Test Circuit
40
20
V
V
= 25V
50
(BR)DSS
D D
0
A
175
25
75
100
125
150
t
p
Starting TJ , Junction Temperature (°C)
V
DD
Fig 12c. Maximum Avalanche Energy
V
Vs. Drain Current
DS
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRFIZ24N
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRFIZ24N
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
10.60 (.41 7)
10.40 (.40 9)
3.40 (.133 )
3.10 (.123 )
4.8 0 (.189)
4.6 0 (.181)
ø
2 .80 (.110)
2 .60 (.102)
- A
-
3.70 (.145)
3.20 (.126)
LE AD A S SIGN M E N T S
1
2
3
-
-
-
GA TE
7 .10 (.280)
6 .70 (.263)
D R AIN
SO U R C E
16 .0 0 (.630)
15 .8 0 (.622)
1.15 (.04 5)
M IN .
N O T ES :
1
D IM EN SION IN G & T O LER A N C IN G
PE R AN S I Y14.5 M , 1982
1
2
3
2
C O N TR OLLIN G D IM EN S ION : IN C H .
3.30 (.130 )
3.10 (.122 )
-
B
-
13 .7 0 (.540)
13 .5 0 (.530)
C
D
A
B
0.48 (.019)
3X
0.44 (.017)
0.9 0 (.035)
3X
0.7 0 (.028)
1.40 (.05 5)
3X
1.05 (.04 2)
2.85 (.112 )
2.65 (.104 )
0.25 (.010 )
A
M
B
M
M IN IM U M C R E EP AG E
D IST A NC E B ET W E EN
2 .54 (.100)
2X
A-B -C -D
= 4.80 (.189 )
Part Marking Information
TO-220 Fullpak
EXAM PLE : THIS IS AN IRFI840G
W ITH ASSEMBLY
A
LOT CODE E401
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
IRFI840G
E401 9 24 5
ASSEMBLY
DATE CODE
(YYW W )
LOT CODE
YY
=
YEAR
= W EEK
W W
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
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