IRFIZ34GPBF [INFINEON]

HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
IRFIZ34GPBF
型号: IRFIZ34GPBF
厂家: Infineon    Infineon
描述:

HEXFET㈢ Power MOSFET
HEXFET㈢功率MOSFET

文件: 总8页 (文件大小:1318K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PD - 94861  
IRFIZ34GPbF  
Lead-Free  
www.irf.com  
1
12/03/03  
IRFIZ34GPbF  
2
www.irf.com  
IRFIZ34GPbF  
www.irf.com  
3
IRFIZ34GPbF  
4
www.irf.com  
IRFIZ34GPbF  
www.irf.com  
5
IRFIZ34GPbF  
6
www.irf.com  
IRFIZ34GPbF  
TO-220 Full-Pak Package Outline  
Dimensions are shown in millimeters (inches)  
TO-220 Full-Pak Part Marking Information  
E XAMP L E : T H IS IS AN IR F I840G  
WIT H AS S E MB L Y  
L OT CODE 3432  
IN T E R N AT IONAL  
AS S E MB L E D ON WW 24 1999  
P AR T N U MB E R  
DAT E CODE  
IR F I8 40G  
924 K  
R E CT IF IE R  
L OGO  
IN T H E AS S E MB L Y L IN E "K "  
34  
32  
Note: "P" in assembly line  
position indicates "Lead-Free"  
YE AR  
WE E K 24  
L IN E  
9 = 1999  
AS S E MB L Y  
L OT CODE  
K
Data and specifications subject to change without notice.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.12/03  
www.irf.com  
7
Note: For the most current drawings please refer to the IR website at:  
http://www.irf.com/package/  

相关型号:

IRFIZ34G_09

Power MOSFET
VISHAY

IRFIZ34N

Power MOSFET(Vdss=55V, Rds(on)=0.04ohm, Id=21A)
INFINEON

IRFIZ34N-002

Power Field-Effect Transistor, 19A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON

IRFIZ34N-003PBF

Power Field-Effect Transistor, 19A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON

IRFIZ34N-004

Power Field-Effect Transistor, 19A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON

IRFIZ34N-004PBF

Power Field-Effect Transistor, 19A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON

IRFIZ34N-005PBF

19A, 55V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
INFINEON

IRFIZ34N-006

Power Field-Effect Transistor, 19A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON

IRFIZ34N-010

Power Field-Effect Transistor, 19A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON

IRFIZ34N-011PBF

19A, 55V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
INFINEON

IRFIZ34N-012

Power Field-Effect Transistor, 19A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON

IRFIZ34N-012PBF

Power Field-Effect Transistor, 19A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
INFINEON