IRFIZ46NPBF [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | IRFIZ46NPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢ Power MOSFET |
| 文件： | 总9页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95595
IRFIZ46NPbF
HEXFET® Power MOSFET
l Advanced Process Technology
l IsolatedPackage
l High Voltage Isolation = 2.5KVRMS ꢀ
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
D
VDSS = 55V
l Lead-Free
RDS(on) = 0.020Ω
G
Description
ID = 33A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowestpossibleon-resistancepersiliconarea. Thisbenefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor, providesthedesignerwithanextremelyefficient
device for use in a wide variety of applications.
S
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
33
23
A
180
PD @TC = 25°C
Power Dissipation
45
W
W/°C
V
Linear Derating Factor
0.3
VGS
EAS
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy
Avalanche Current
230
mJ
IAR
16
4.5
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
5.0
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
°C
300 (1.6mm from case)
10 lbfin (1.1Nm)
Thermal Resistance
Parameter
Min.
Typ.
Max.
3.3
Units
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
65
°C/W
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1
07/23/04
IRFIZ46NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.017 V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance 0.020
Ω
V
S
VGS = 10V, ID = 19A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 28A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
2.0
16
4.0
Forward Transconductance
25
250
100
-100
61
13
24
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -20V
Qg
ID = 28A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC
ns
VDS = 44V
VGS = 10V, See Fig. 6 and 13
VDD = 28V
12
80
43
52
RiseTime
ID = 28A
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 12Ω
RD = 0.98Ω, See Fig. 10
Between lead,
D
LD
Internal Drain Inductance
4.5
6mm (0.25in.)
nH
pF
G
from package
LS
Internal Source Inductance
7.5
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
C
Input Capacitance
1500
450
160
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Drain to Sink Capacitance
= 1.0MHz, See Fig. 5
= 1.0MHz
12
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFETsymbol
D
IS
33
A
showing the
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
180
S
p-n junction diode.
TJ = 25°C, IS = 19A, VGS = 0V
TJ = 25°C, IF = 28A
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
1.3
72 110
210 310
V
ns
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
VDD = 25V, starting TJ = 25°C, L = 410µH
RG = 25Ω, IAS = 28A. (See Figure 12)
max. junction temperature. ( See fig. 11 )
ISD ≤ 28A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRFZ46N data and test conditions
ꢀ t=60s, =60Hz
2
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IRFIZ46NPbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
TJ
C
= 175°C
T
= 25°C
J
1
0.1
1
0.1
A
A
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
100
10
2.5
2.0
1.5
1.0
0.5
0.0
I
= 28A
D
TJ = 25°C
TJ = 175°C
V DS= 25V
20µs PULSE WIDTH
V
= 10V
GS
1
A
10A
4
5
6
7
8
9
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
T
, Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRFIZ46NPbF
2800
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
I
= 28A
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
V
V
= 44V
= 28V
gs
gd
ds
DS
DS
= C
gd
2400
2000
1600
1200
800
400
0
= C + C
ds
gd
C
C
iss
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
1
10
100
0
10
20
30
40
50
60
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
T = 175°C
J
100µs
T = 25°C
J
1ms
10ms
T
T
= 25°C
= 175°C
C
J
Single Pulse
V
= 0V
GS
A
1
1
A
100
0.4
0.8
1.2
1.6
2.0
2.4
1
10
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFIZ46NPbF
RD
VDS
35
30
25
20
15
10
5
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
10%
°
T , Case Temperature ( C)
C
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
D = 0.50
0.20
1
0.10
0.05
P
0.02
0.01
DM
SINGLE PULSE
(THERMAL RESPONSE)
0.1
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFIZ46NPbF
L
V
500
400
300
200
100
0
DS
I
D
TOP
11A
20A
D.U.T.
BOTTOM 28A
R
+
-
G
V
DD
I
10 V
AS
t
p
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
V
DD
V
= 25V
50
DD
A
175
25
75
100
125
150
Starting T , Junction Temperature (°C)
V
J
DS
Fig 12c. Maximum Avalanche Energy
I
AS
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFIZ46NPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFIZ46NPbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
EXAMP LE: THIS IS AN IRFI840 G
WITH AS S EMBLY
P ART NUMBER
LO T CO DE 3 43 2
INT E RNAT IO NAL
RE CT IF IE R
LO G O
IRFI840G
AS S EMBLED O N WW 24 199 9
IN THE AS S EMBLY LINE "K"
924K
32
34
DATE CO DE
YEAR 9 = 199 9
WEEK 24
Note: "P" in assembly line
position indicates "Lead-Free"
AS S EMBLY
LO T CO DE
LINE K
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/04
8
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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