IRFIZ48N [INFINEON]
Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=36A); 功率MOSFET （ VDSS = 55V ， RDS（ON） = 0.016ohm ，ID = 36A ）
| 型号： | IRFIZ48N |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=36A) |
| 文件： | 总8页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD 9.1407
IRFIZ48N
PRELIMINARY
HEXFET® Power MOSFET
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 0.016Ω
ID = 36A
G
S
Description
Fifth Generation HEXFETs from International Rectifier
utilizeadvancedprocessingtechniquestoachieveextremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
36
25
A
210
PD @TC = 25°C
PowerDissipation
42
W
W/°C
V
LinearDeratingFactor
0.28
± 20
270
VGS
EAS
IAR
Gate-to-SourceVoltage
SinglePulseAvalancheEnergy
AvalancheCurrent
mJ
A
32
EAR
dv/dt
TJ
RepetitiveAvalancheEnergy
PeakDiodeRecoverydv/dt
OperatingJunctionand
4.2
mJ
V/ns
5.6
-55 to + 175
TSTG
StorageTemperatureRange
SolderingTemperature,for10seconds
Mountingtorque, 6-32orM3srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
3.6
Units
RθJC
RθJA
°C/W
Junction-to-Ambient
–––
65
IRFIZ48N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 ––– –––
––– 0.052 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-SourceBreakdownVoltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ BreakdownVoltageTemp.Coefficient
RDS(on)
VGS(th)
gfs
StaticDrain-to-SourceOn-Resistance
GateThresholdVoltage
––– ––– 0.016
Ω
V
S
VGS = 10V, ID = 22A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 32A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
2.0
22
––– 4.0
––– –––
ForwardTransconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 89
––– ––– 20
––– ––– 39
IDSS
Drain-to-SourceLeakageCurrent
µA
nA
Gate-to-SourceForwardLeakage
Gate-to-SourceReverseLeakage
TotalGateCharge
IGSS
VGS = -20V
Qg
ID = 32A
Qgs
Qgd
td(on)
tr
Gate-to-SourceCharge
Gate-to-Drain("Miller")Charge
Turn-OnDelayTime
RiseTime
nC VDS = 44V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
11 –––
78 –––
32 –––
48 –––
VDD = 28V
ID = 32A
ns
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 5.1Ω
RD = 0.85Ω, See Fig. 10
Betweenlead,
6mm(0.25in.)
frompackage
and center of die contact
VGS = 0V
D
4.5
7.5
LD
LS
InternalDrainInductance
InternalSourceInductance
–––
–––
–––
–––
nH
pF
G
S
Ciss
Coss
Crss
C
InputCapacitance
––– 1900 –––
––– 620 –––
––– 270 –––
OutputCapacitance
VDS = 25V
ReverseTransferCapacitance
DraintoSinkCapacitance
ƒ = 1.0MHz, See Fig. 5
ƒ = 1.0MHz
–––
12 –––
Source-Drain Ratings and Characteristics
Parameter
ContinuousSourceCurrent
(BodyDiode)
Min. Typ. Max. Units
Conditions
MOSFETsymbol
showing the
D
IS
––– ––– 36
A
G
ISM
PulsedSourceCurrent
(BodyDiode)
integralreverse
––– ––– 210
S
p-njunctiondiode.
VSD
trr
DiodeForwardVoltage
ReverseRecoveryTime
ReverseRecoveryCharge
––– ––– 1.3
––– 94 140
––– 360 540
V
TJ = 25°C, IS = 22A, VGS = 0V
TJ = 25°C, IF = 32A
ns
Qrr
nC di/dt = 100A/µs
Notes:
Pulse width≤ 300µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 530µH
t=60s, ƒ=60Hz
RG = 25Ω, IAS = 32A. (See Figure 12)
Uses IRFZ48N data and test conditions
ISD ≤ 32A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS
,
TJ ≤ 175°C
IRFIZ48N
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
1
1
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 175°C
T = 25°C
C
C
0.1
0.1
0.1
0.1
A
100
A
1
10
100
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics,
Fig 2. Typical Output Characteristics,
TJ = 25oC
TJ = 175oC
1000
2.5
2.0
1.5
1.0
0.5
0.0
I
= 53A
D
100
10
1
T = 175°C
J
T = 25°C
J
V
= 25V
DS
20µs PULSE WIDTH
V
= 10V
GS
0.1
10A
A
4
5
6
7
8
9
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
IRFIZ48N
20
16
12
8
4000
I
= 32A
V
= 0V,
f = 1MHz
D
GS
C
C
C
= C + C
,
C
ds
SHORTED
V
V
= 44V
iss
rss
oss
gs
gd
DS
= C
gd
= 28V
DS
= C + C
ds
gd
3000
2000
1000
0
C
C
iss
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
0
20
40
60
80
100
1
10
100
VDS , Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
T = 175°C
J
T = 25°C
J
100µs
1ms
1
10ms
T
T
= 25°C
= 175°C
C
J
Single Pulse
V
= 0V
GS
A
0.1
1
A
0.2
0.6
1.0
1.4
1.8
2.2
2.6
1
10
100
V
, Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating
Forward Voltage
Area
IRFIZ48N
RD
VDS
40
30
20
10
0
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
A
25
50
75
100
125
150
175
10%
TC, Case Temperature (°C)
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.02
0.01
0.1
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2
thJC
1
2. Peak T = P
DM
x Z
+ T
C
J
A
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFIZ48N
700
600
500
400
300
200
100
0
I
D
15V
TOP
13A
22A
BOTTOM 32A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test
Circuit
V
(BR)DSS
V
= 25V
50
DD
A
175
t
p
25
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
IRFIZ48N
Peak Diode Recovery dv/dt Test Circuit
+
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
D.U.T
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRFIZ48N
Package Outline — TO-220 Fullpak
Dimensions are shown in millimeters (inches)
10.60 (.417)
10.40 (.409)
3.40 (.133)
3.10 (.123)
4.80 (.189)
4.60 (.181)
ø
2.80 (.110)
2.60 (.102)
- A -
3.70 (.145)
3.20 (.126)
LEAD ASSIGNMENTS
1 - GATE
7.10 (.280)
6.70 (.263)
2 - DRAIN
3 - SOURCE
16.00 (.630)
15.80 (.622)
1.15 (.045)
MIN.
NOTES:
1
DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982
1
2
3
2
CONTROLLING DIMENSION: INCH.
3.30 (.130)
3.10 (.122)
- B -
13.70 (.540)
13.50 (.530)
C
D
A
B
0.48 (.019)
0.44 (.017)
0.90 (.035)
3X
0.70 (.028)
3X
1.40 (.055)
1.05 (.042)
3X
2.85 (.112)
2.65 (.104)
0.25 (.010)
A
M
B
M
MINIMUM CREEPAGE
DISTANCE BETWEEN
A-B-C-D = 4.80 (.189)
2.54 (.100)
2X
Part Marking
EXAMPLE : THIS IS AN IRFI840G
WITH ASSEMBLY
LOT CODE E401
A
PART NUMBER
INTERNATIONAL
E401 9245
RECTIFIER
IRFI840G
LOGO
ASSEMBLY
DATE CODE
(YYWW)
OT DE
L
CO
YY = YEAR
WW = WEEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS:Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
4/96
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