IRFL1006PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFL1006PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总9页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95316
IRFL1006PbF
HEXFET® Power MOSFET
ꢀ Surface Mount
D
ꢀ Advanced Process Technology
ꢀ Dynamic dv/dt Rating
ꢀ Fast Switching
VDSS = 60V
RDS(on) = 0.22Ω
ꢀ Fully Avalanche Rated
ꢀ Lead-Free
G
ID = 1.6A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremelylow on-resistancepersiliconarea. Thisbenefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor,providesthedesignerwithanextremelyefficient
andreliabledeviceforuseinawidevarietyofapplications.
The SOT-223 package is designed for surface-mount
usingvaporphase,infrared,orwavesolderingtechniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
SOT-223
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current ꢁ
2.3
1.6
A
1.3
6.4
PD @TA = 25°C
PD @TA = 25°C
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
2.1
W
W
1.0
8.3
mW/°C
V
VGS
± 20
54
EAS
Single Pulse Avalanche Energyꢂ
Avalanche Currentꢁ
mJ
A
IAR
1.6
EAR
Repetitive Avalanche Energyꢁ*
Peak Diode Recovery dv/dt ꢃ
Junction and Storage Temperature Range
0.1
mJ
V/ns
°C
dv/dt
TJ, TSTG
5.0
-55 to + 150
Thermal Resistance
Parameter
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Typ.
90
Max.
120
60
Units
RθJA
RθJA
°C/W
50
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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1
05/26/04
IRFL1006PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
60 ––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
GateThresholdVoltage
––– ––– 0.22
Ω
V
S
VGS = 10V, ID = 1.6A ꢁ
VDS = VGS, ID = 250µA
VDS = 25V, ID = 1.6A
2.0
3.0
––– 4.0
––– –––
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 8.0
––– ––– 1.7
––– ––– 3.3
VDS = 60V, VGS = 0V
IDSS
Drain-to-SourceLeakageCurrent
µA
nA
VDS = 48V, VGS = 0V, TJ = 125°C
Gate-to-SourceForwardLeakage
Gate-to-SourceReverseLeakage
Total Gate Charge
VGS = 20V
IGSS
VGS = -20V
ID = 1.6A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 48V
VGS = 10V, See Fig. 6 and 9 ꢁ
–––
–––
–––
–––
7.4 –––
18 –––
18 –––
17 –––
VDD = 30V
ID = 1.6A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 49Ω
RD = 19Ω, See Fig. 10 ꢁ
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 160 –––
Output Capacitance
–––
–––
55 –––
19 –––
pF
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
––– ––– 1.6
A
showing the
ISM
Pulsed Source Current
(Body Diode) ꢀ
integral reverse
––– ––– 6.4
p-n junction diode.
TJ = 25°C, IS = 1.6A, VGS = 0V ꢁ
TJ = 25°C, IF = 1.6A
di/dt = 100A/µs ꢁ
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
V
––– 31
––– 46
47
68
ns
nC
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ꢀ Repetitive rating; pulse width limited by
ꢁ ISD ≤ 1.6A, di/dt ≤ 260A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
max. junction temperature. ( See fig. 11 )
ꢂ Starting TJ = 25°C, L = 42 mH
ꢃ Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 1.6A. (See Figure 12)
2
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IRFL1006PbF
10
10
VGS
15V
10V
VGS
15V
10V
TOP
TOP
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
1
1
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 150 C
J
°
T = 150 C
J
°
0.1
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.5
1.6A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
2.0
1.5
1.0
0.5
0.0
1
V
= 25V
DS
V
=10V
GS
20µs PULSE WIDTH
0.1
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5.0
6.0
7.0 8.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFL1006PbF
20
16
12
8
300
V
= 0V,
f = 1MHz
C SHORTED
ds
I = 1.6A
D
GS
C
= C + C
iss
gs
gd ,
C
= C
V
V
V
= 48V
= 30V
= 12V
rss
gd
DS
DS
DS
C
= C + C
240
180
120
60
oss
ds
gd
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
10
100
0
2
4
6
8
10
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
100us
1ms
1
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.4
0.1
0.6
0.8
1.0
1.2
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFL1006PbF
2.0
1.5
1.0
0.5
0.0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1000
100
10
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
10
DM
thJA
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFL1006PbF
140
120
100
80
I
D
TOP
0.72A
1.0A
BOTTOM 1.6A
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
60
DD
-
I
A
20V
0.01
Ω
t
40
p
20
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFL1006PbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
D.U.T
ꢀ
• Low Leakage Inductance
Current Transformer
-
+
ꢂ
-
ꢁ
-
+
ꢃ
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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IRFL1006PbF
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
HEXFET PRODUCT MARKING
THIS IS AN IRFL014
LOT CODE
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
FL014
314P
AXXXX
A = ASSEMBLY SITE
CODE
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
BOTTOM
TOP
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
8
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IRFL1006PbF
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
4.10 (.161)
0.35 (.013)
0.25 (.010)
1.85 (.072)
3.90 (.154)
2.05 (.080)
1.95 (.077)
1.65 (.065)
TR
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
2.30 (.090)
2.10 (.083)
7.10 (.279)
6.90 (.272)
12.10 (.475)
11.90 (.469)
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
50.00 (1.969)
MIN.
18.40 (.724)
MAX.
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
14.40 (.566)
12.40 (.488)
4
3
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 05/04
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9
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IRFL1006TRPBF
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