首页 |元器件品牌

IRFL9110PBF [INFINEON]

HEXFET㈢ Power MOSFET ( VDSS = -100V , RDS(on) = 1.2ヘ , ID = -1.1A ); HEXFET㈢功率MOSFET （ VDSS = -100V ， RDS （ ON） = 1.2ヘ， ID = -1.1A ）
IRFL9110PBF
型号： IRFL9110PBF
厂家： Infineon    Infineon
描述：

HEXFET㈢ Power MOSFET ( VDSS = -100V , RDS(on) = 1.2ヘ , ID = -1.1A )
HEXFET㈢功率MOSFET （ VDSS = -100V ， RDS （ ON） = 1.2ヘ， ID = -1.1A ）

晶体 小信号场效应晶体管 开关 光电二极管
文件： 总9页 (文件大小：223K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
PD - 95320  
IRFL9110PbF  
HEXFET® Power MOSFET  
ꢀ Surface Mount  
ꢀ Available in Tape & Reel  
ꢀ Dynamic dv/dt Rating  
ꢀ Repetitive Avalanche Rated  
ꢀ P-Channel  
ꢀ Fast Switching  
ꢀ Ease of Paralleling  
ꢀ Lead-Free  
D
VDSS = -100V  
RDS(on) = 1.2Ω  
G
ID = -1.1A  
S
Description  
Third Generation HEXFETs from International Rectifier  
provide the designer with the best combination of fast  
switching, ruggedized device design, low on-resistance  
andcost-effectiveness.  
TheSOT-223packageisdesignedforsurface-mountusing  
vapor phase, infra red, or wave soldering techniques. Its  
uniquepackagedesignallowsforeasyautomaticpick-and-  
place as with other SOT or SOIC packages but has the  
addedadvantageofimprovedthermalperformancedueto  
an enlarged tab for heatsinking. Power dissipation of  
grreater than 1.25W is possible in a typical surface mount  
application.  
SOT-223  
Absolute Maximum Ratings  
Parameter  
Max.  
-1.1  
Units  
ID @ Tc = 25°C  
ID @ Tc = 100°C  
IDM  
Continuous Drain Current, VGS @ -10 V  
Continuous Drain Current, VGS @ -10 V  
Pulsed Drain Current ꢀ  
-0.69  
-8.8  
A
PD @Tc = 25°C  
PD @TA = 25°C  
Power Dissipation  
3.1  
Power Dissipation (PCB Mount)**  
Linear Derating Factor  
2.0  
W
0.025  
0.017  
-/+20  
100  
Linear Derating Factor (PCB Mount)**  
Gate-to-Source Voltage  
W/°C  
V
VGS  
EAS  
Single Pulse Avalanche Energyꢁ  
Avalanche Currentꢀ  
mJ  
A
IAR  
-1.1  
EAR  
Repetitive Avalanche Energyꢀ  
Peak Diode Recovery dv/dt ꢂ  
Junction and Storage Temperature Range  
Soldewring Temperature, for 10 seconds  
0.31  
-5.5  
mJ  
V/ns  
dv/dt  
TJ, TSTG  
-55 to + 150  
300 (1.6mm from case)  
°C  
Thermal Resistance  
Parameter  
Junction-to-PCB  
Typ.  
–––  
–––  
Max.  
40  
Units  
RθJC  
RθJA  
°C/W  
Junction-to-Ambient.(PCBMount)**  
60  
** When mounted on 1'' SQUARE pcb (FR-4 or G-10 Material).  
For recommended footprint and soldering techniques refer to application note #AN-994.  
www.irf.com  
1
05/26/04  
IRFL9110PbF  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
-100 ––– –––  
Conditions  
VGS = 0V, ID = 250µA  
V(BR)DSS  
Drain-to-Source Breakdown Voltage  
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.091 ––– V/°C Reference to 25°C, ID = 1mA  
RDS(on)  
VGS(th)  
gfs  
Static Drain-to-Source On-Resistance  
Gate Threshold Voltage  
––– ––– 1.2  
-2.0 ––– -4.0  
0.82 ––– –––  
––– ––– -100  
––– ––– -500  
––– ––– -100  
––– ––– 100  
––– ––– 8.7  
––– ––– 2.2  
––– ––– 4.1  
Ω
V
S
VGS = -10V, ID = 0.66A ꢀ  
VDS = VGS, ID = 250µA  
Forward Transconductance  
VDS = -50V, ID = 0.66 A ꢀ  
VDS = -100V, VGS = 0V  
IDSS  
IGSS  
Drain-to-Source Leakage Current  
µA  
nA  
VDS = -80V, VGS = 0V, TJ = 125°C  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Total Gate Charge  
VGS = -20V  
VGS = 20V  
ID =-4.0A  
Qg  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
nC VDS =-80V  
VGS = -10V, See Fig. 6 and 13 ꢀ  
–––  
–––  
–––  
–––  
10 –––  
27 –––  
15 –––  
VDD = -50V  
ID = -4.0A  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
RG = 24 Ω  
RD = 11 Ω, See Fig. 10 ꢀ  
17  
–––  
D
Betweenlead,6mm(0.25in)  
from package and center  
LD  
InternalDrainInductance  
–––  
4.0 –––  
nH  
G
of die contact.  
LS  
InternalSourceInductance  
–––  
6.0 –––  
S
Ciss  
Coss  
Crss  
Input Capacitance  
––– 200 –––  
VGS = 0V  
Output Capacitance  
–––  
–––  
94 –––  
18 –––  
pF  
VDS = 25V  
Reverse Transfer Capacitance  
ƒ = 1.0MHz, See Fig. 5  
Source-Drain Ratings and Characteristics  
Parameter  
ContinuousSourceCurrent  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
MOSFET symbol  
showing the  
D
IS  
––– ––– -1.1  
A
G
ISM  
Pulsed Source Current  
(Body Diode) ꢁ  
integralreverse  
–––  
-8.8  
–––  
S
p-njunctiondiode.  
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse RecoveryCharge  
ForwardTurn-OnTime  
––– ––– -5.5  
––– 80 160  
––– 0.15 0.30  
V
TJ = 25°C, IS = -1.1A, VGS = 0V ꢀ  
ns  
TJ = 25°C, IF =-4.0A  
Qrr  
ton  
µC di/dt = 100A/µs ꢀ  
Intrinsicturn-ontimeisnegligible(turn-onisdominatedbyLS+LD)  
Notes:  
ꢀ Repetitive rating; pulse width limited by  
max. junction temperature. ( See fig. 11 )  
ꢁ ISD ≤ -4.0A, di/dt ≤−75A/µs, VDD ≤ V(BR)DSS  
TJ ≤ 150°C  
,
ꢂ VDD=-25V, starting TJ = 25°C, L =7.7 mH  
RG = 25Ω, IAS = -4.4A. (See Figure 12)  
ꢃ Pulse width ≤ 300µs; duty cycle ≤ 2%.  
2
www.irf.com  
IRFL9110PbF  
www.irf.com  
3
IRFL9110PbF  
4
www.irf.com  
IRFL9110PbF  
www.irf.com  
5
IRFL9110PbF  
6
www.irf.com  
IRFL9110PbF  
www.irf.com  
7
IRFL9110PbF  
SOT-223 (TO-261AA) Package Outline  
Dimensions are shown in milimeters (inches)  
SOT-223 (TO-261AA) Part Marking Information  
HEXFET PRODUCT MARKING  
THIS IS AN IRFL014  
LOT CODE  
PART NUMBER  
INTERNATIONAL  
RECTIFIER  
LOGO  
FL014  
314P  
AXXXX  
A = ASSEMBLY SITE  
CODE  
DATE CODE  
(YYWW)  
YY = YEAR  
WW = WEEK  
BOTTOM  
TOP  
P = DESIGNATES LEAD-FREE  
PRODUCT (OPTIONAL)  
8
www.irf.com  
IRFL9110PbF  
SOT-223 (TO-261AA) Tape & Reel Information  
Dimensions are shown in milimeters (inches)  
4.10 (.161)  
0.35 (.013)  
0.25 (.010)  
1.85 (.072)  
3.90 (.154)  
2.05 (.080)  
1.95 (.077)  
1.65 (.065)  
TR  
7.55 (.297)  
7.45 (.294)  
16.30 (.641)  
15.70 (.619)  
7.60 (.299)  
7.40 (.292)  
1.60 (.062)  
1.50 (.059)  
TYP.  
FEED DIRECTION  
2.30 (.090)  
2.10 (.083)  
7.10 (.279)  
6.90 (.272)  
12.10 (.475)  
11.90 (.469)  
NOTES :  
1. CONTROLLING DIMENSION: MILLIMETER.  
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.  
13.20 (.519)  
12.80 (.504)  
15.40 (.607)  
11.90 (.469)  
4
330.00  
(13.000)  
MAX.  
50.00 (1.969)  
MIN.  
18.40 (.724)  
NOTES :  
MAX.  
1. OUTLINE COMFORMS TO EIA-418-1.  
2. CONTROLLING DIMENSION: MILLIMETER..  
3. DIMENSION MEASURED @ HUB.  
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.  
14.40 (.566)  
12.40 (.488)  
4
3
Data and specifications subject to change without notice.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information. 05/04  
www.irf.com  
9

相关型号：

IRFL9110TR

 Power MOSFET
VISHAY

IRFL9110TRPBF

 Power MOSFET
VISHAY

IRFL9110TRPBF

 Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN
INFINEON

IRFM

 N-CHANNEL POWER MOSFET
SEME-LAB

IRFM010

 TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 2.7A I(D) | SOT-223
ETC

IRFM014

 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.7A I(D) | SOT-223
ETC

IRFM014A

 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.8A I(D) | SOT-223
ETC

IRFM014AD84Z

 Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FAIRCHILD

IRFM014AS62Z

 Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FAIRCHILD

IRFM040

 TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 25A I(D) | TO-254AA
ETC

IRFM044

 60V, N-CHANNEL
INFINEON

IRFM044D

 Power Field-Effect Transistor, 35A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
INFINEON
©2020 ICPDF网 联系我们和版权申明