IRFM340UPBF [INFINEON]
Power Field-Effect Transistor, 10A I(D), 400V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN;
| 型号： | IRFM340UPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 10A I(D), 400V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN |
| 文件： | 总7页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 90490D
IRFM340
JANTX2N7221
JANTXV2N7221
POWER MOSFET
THRU-HOLE (TO-254AA)
REF:MIL-PRF-19500/596
400V, N-CHANNEL
HEXFET® MOSFETTECHNOLOGY
Product Summary
Part Number
RDS(on)
ID
IRFM340
0.55 Ω
10A
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-254AA
Features:
n
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light-weight
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 10V, T = 25°C
Continuous Drain Current
10
6.0
D
GS
C
A
I
= 10V, T = 100°C Continuous Drain Current
D
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
40
DM
@ T = 25°C
P
125
W
W/°C
V
D
C
Linear Derating Factor
1.0
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
650
mJ
A
AS
I
10
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
12.5
4.0
mJ
V/ns
AR
dv/dt
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
300 ( 0.063 in.(1.6mm) from case for 10s)
9.3 (Typical)
Lead Temperature
Weight
For footnotes refer to the last page
www.irf.com
1
1/29/02
IRFM340
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
400
—
—
—
—
V
V
= 0V, I = 1.0mA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.49
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
2.0
4.9
—
—
—
—
—
—
—
0.55
0.70
4.0
—
V
= 10V, I = 6.0A
DS(on)
GS D
➀
Ω
V
= 10V, I = 10A
D
GS
V
V
V
= V , I = 250µA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
> 15V, I
= 6.0A ➀
DS
V
DS
I
25
250
= 320V ,V =0V
DSS
DS GS
µA
—
V
= 320V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
65
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=10V, I = 10A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
10
40.5
25
V
DS
=200V
t
t
t
t
V
= 200V, I = 10A,
DD
GS
D
92
79
V
=10V, R = 2.35Ω
G
ns
d(off)
f
58
L
+ L
Total Inductance
—
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
S
D
nH
C
C
C
Input Capacitance
Output Capacitance
—
—
—
1400
350
—
—
—
V
= 0V, V
= 25V
iss
oss
rss
GS
DS
f = 1.0MHz
pF
Reverse Transfer Capacitance
230
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
10
40
1.5
600
5.6
S
A
SM
V
T = 25°C, I = 10A, V
= 0V ➀
j
SD
rr
S
GS
Reverse Recovery Time
nS
µC
T = 25°C, I = 10A, di/dt ≤ 100A/µs
j
F
Q
Reverse Recovery Charge
V
DD
≤ 50V ➀
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Csae-to-sink
—
—
—
1.0
—
thJC
thCS
°C/W
0.21
R
Junction-to-Ambient
—
—
48
Typical socket mount
thJA
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
IRFM340
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
www.irf.com
3
IRFM340
13a & b
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
4
www.irf.com
IRFM340
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFM340
15V
DRIVER
L
V
D S
D.U .T
AS
.
R
G
+
-
V
D D
I
A
10
2V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
10V
Q
G
.3µF
10 V
+
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
www.irf.com
IRFM340
Footnotes:
➀➀ I
SD
≤ 10A, di/dt ≤ 100A/µs,
➀➀ Repetitive Rating; Pulse width limited by
V
≤ 400V, T ≤ 150°C
maximum junction temperature.
DD
J
➀➀➀V
= 50V, starting T = 25°C, L= 13mH
J
DD
Peak I = 10A, V
➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
= 10V
L
GS
Case Outline and Dimensions —TO-254AA
0.12 [.005]
0.12 [.005]
6.60 [.260]
6.32 [.249]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
1.27 [.050]
1.02 [.040]
A
A
20.32 [.800]
20.07 [.790]
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
17.40 [.685]
16.89 [.665]
B
13.84 [.545]
13.59 [.535]
22.73 [.895]
21.21 [.835]
13.84 [.545]
13.59 [.535]
B
R 1.52 [.060]
1
2
3
1
2
3
4.06 [.160]
3.56 [.140]
C
17.40 [.685]
16.89 [.665]
0.84 [.033]
MAX.
4.82 [.190]
3.81 [.150]
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
2X
1.14 [.045]
0.89 [.035]
0.36 [.014]
B A
3X
3.81 [.150]
3.81 [.150]
2X
0.36 [.014]
B A
NOTES:
PIN ASSIGNMENTS
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
1
2
3
=
=
=
DRAIN
SOURCE
GATE
4. CONFORMS TO JEDEC OUTLINE TO-254AA.
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/02
www.irf.com
7
相关型号：
IRFM350
Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3
TEMIC
IRFM440DPBF
Power Field-Effect Transistor, 8A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
INFINEON
IRFM440PBF
Power Field-Effect Transistor, 8A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
INFINEON
©2020 ICPDF网 联系我们和版权申明