IRFM8240 [INFINEON]
POWER MOSFET THRU-HOLE (TO-254AA); 功率MOSFET直通孔（ TO- 254AA ）
| 型号： | IRFM8240 |
| 厂家： | 
Infineon |
| 描述： | POWER MOSFET THRU-HOLE (TO-254AA) |
| 文件： | 总7页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 90497F
IRFM9240
JANTX2N7237
JANTXV2N7237
JANS2N7237
REF:MIL-PRF-19500/595
200V, P-CHANNEL
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
HEXFET® MOSFETTECHNOLOGY
Part Number RDS(on)
ID
IRFM9240 0.51Ω -11A
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance. HEXFET tran-
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-254AA
Features:
n
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light-weight
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= -10V, T = 25°C Continuous Drain Current
-11
-7.0
D
D
GS
GS
C
A
I
= -10V, T = 100°C Continuous Drain Current
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
-44
DM
@ T = 25°C
P
D
125
W
W/°C
V
C
Linear Derating Factor
1.0
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
500
mJ
A
AS
I
-11
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
12.5
-5.0
mJ
V/ns
AR
dv/dt
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
300 ( 0.063 in.(1.6mm) from case for 10s)
9.3 (typical)
Lead Temperature
Weight
For footnotes refer to the last page
www.irf.com
1
11/18/02
IRFM9240
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source BreakdownVoltage
-200
—
—
—
—
V
V
= 0V, I = -1.0mA
D
GS
V/°C Reference to 25°C, I = -1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
-0.2
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
0.51
0.52
-4.0
—
V
= -10V, I = -7.0A➀
= -10V, I = -11A ➀
D
DS(on)
GS D
Ω
V
GS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
-2.0
4.0
—
V
S ( )
V
= V , I = -250µA
GS(th)
fs
DS
GS
D
Ω
g
V
DS
> -15V, I
= -7.0A➀
DS
I
-25
V
= -160V, V = 0V
DS GS
DSS
µA
—
-250
V
= -160V
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
-100
100
60
V
= -20V
GSS
GSS
GS
nA
nC
V
=20V
GS
= -10V, ID -11A
Q
Q
Q
V
GS
g
gs
gd
d(on)
r
=
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
15
V
DS
= -100V
38
t
t
t
t
35
V
= -100V, I = -11A,
DD
D
=9.1Ω, V
85
R
G
= -10V
GS
ns
Turn-Off Delay Time
Fall Time
85
65
d(off)
f
L
L
Total Inductance
—
nH
Measured from drain lead (6mm/
0.25in. from package) to source lead
(6mm/0.25in. from package)
S +
D
C
C
C
Input Capacitance
—
—
—
1200
570
81
V
GS
= 0V, V
= -25V
iss
DS
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
—
—
pF
oss
rss
Source-DrainDiodeRatingsandCharacteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
—
—
—
—
-11
-44
S
A
Pulse Source Current (Body Diode) ➀
SM
V
t
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-4.6
440
7.2
V
T = 25°C, I = -11A, V
= 0V ➀
j
SD
S
GS
nS
µc
T = 25°C, I = -11A, di/dt ≤-100A/µs
j
rr
F
Q
V
≤ -50V ➀
RR
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
R
thCS
R
thJA
Junction-to-Case
Case-to-sink
—
—
—
—
0.21
—
1.0
—
°C/W
Junction-to-Ambient
48
Typical socket mount
For footnotes refer to the last page
2
www.irf.com
IRFM9240
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
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3
IRFM9240
13a & b
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
4
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IRFM9240
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
90%
V
DS
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFM9240
L
V
D S
D .U .T
R
G
V
D D
I
A
A S
D R IV ER
-10V
-
0.0 1
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
I
AS
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
-10V
.3µF
-10V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFM9240
Foot Notes:
➀ I
≤ -11A, di/dt ≤ −150A/µs,
➀ Repetitive Rating; Pulse width limited by
SD
DD
V
≤ -200V, T ≤ 150°C
maximum junction temperature.
J
➀ V
=-50V, starting T = 25°C, L = 8.3mH
J
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
DD
Peak I = -11A, V
= -10V
L
GS
Case Outline and Dimensions —TO-254AA
0.12 [.005]
0.12 [.005]
6.60 [.260]
6.32 [.249]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
1.27 [.050]
1.02 [.040]
A
A
20.32 [.800]
20.07 [.790]
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
17.40 [.685]
16.89 [.665]
B
13.84 [.545]
13.59 [.535]
22.73 [.895]
21.21 [.835]
13.84 [.545]
13.59 [.535]
B
R 1.52 [.060]
1
2
3
1
2
3
C
4.06 [.160]
3.56 [.140]
17.40 [.685]
16.89 [.665]
0.84 [.033]
MAX.
4.82 [.190]
3.81 [.150]
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
2X
1.14 [.045]
0.89 [.035]
0.36 [.014]
B A
3X
3.81 [.150]
3.81 [.150]
2X
0.36 [.014]
B
A
NOTE S :
PIN ASSIGNMENTS
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONT ROLLING DIMENS ION: INCH.
1
2
3
=
=
=
DRAIN
SOURCE
GATE
4. CONFORMS TO JEDEC OUTLINE TO-254AA.
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 11/02
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