IRFP048N [INFINEON]
Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=64A); 功率MOSFET （ VDSS = 55V ， RDS（ON） = 0.016ohm ，ID = 64A ）
| 型号： | IRFP048N |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=64A) |
| 文件： | 总8页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1409A
IRFP048N
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 55V
RDS(on) = 0.016Ω
l Fully Avalanche Rated
G
ID = 64A
Description
S
FifthGenerationHEXFETsfromInternationalRectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ꢀ
64
45
A
210
PD @TC = 25°C
Power Dissipation
140
W
W/°C
V
Linear Derating Factor
0.90
± 20
270
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energyꢀ
Avalanche Currentꢀ
mJ
32
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
14
mJ
5.0
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RθJC
RθCS
RθJA
1.1
–––
40
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.24
–––
°C/W
8/25/97
IRFP048N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.052 ––– V/°C Reference to 25°C, ID = 1mAꢀ
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 0.016
Ω
V
S
VGS = 10V, ID = 37A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 32Aꢀ
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
2.0
22
––– 4.0
––– –––
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 89
––– ––– 20
––– ––– 39
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 32A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
VGS = 10V, See Fig. 6 and 13 ꢀ
–––
–––
–––
–––
11 –––
78 –––
32 –––
48 –––
VDD = 28V
ID = 32A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 5.1Ω
RD = 0.85Ω, See Fig. 10 ꢀ
Between lead,
6mm (0.25in.)
D
5.0
13
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
nH
pF
G
from package
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 1900 –––
––– 620 –––
––– 270 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
45
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode) ꢀ
integral reverse
210
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.3
––– 94 140
––– 360 540
V
TJ = 25°C, IS = 37A, VGS = 0V
ns
TJ = 25°C, IF = 32A
Qrr
nC di/dt = 100A/µs ꢀ
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Uses IRFZ48N data and test conditions
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 530µH
RG = 25Ω, IAS = 32A. (See Figure 12)
ISD ≤ 32A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
IRFP048N
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
BOTT OM 4.5V
4.5V
1
1
4.5V
20µs PULSE W IDTH
20µs P ULSE WIDTH
T
= 25°C
T
= 175°C
C
C
0.1
A
100
0.1
A
0.1
1
10
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
D S
D S
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2. 5
2. 0
1. 5
1. 0
0. 5
0. 0
1 0 0 0
I
= 53A
D
1 0 0
1 0
1
T
= 175°C
J
T
= 25°C
J
V
= 25V
DS
V
= 10V
GS
20µs P ULSE W ID TH
0. 1
A
1 0 A
- 6 0 - 4 0 - 2 0
0
2 0
4 0
6 0
8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
4
5
6
7
8
9
TJ , Junction Temperature (°C)
VG S , Ga te-to-So urce Voltage (V )
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFP048N
4000
20
16
12
8
V
C
C
C
= 0V,
f = 1M Hz
I
= 32A
D
GS
iss
= C
= C
= C
+ C
+ C
,
C
ds
SHORTE D
gs
gd
ds
gd
V
V
= 44V
DS
rss
o ss
= 28V
DS
g d
3000
2000
1000
0
C
C
is s
o s s
C
rs s
4
FOR TES T CIRCUIT
SEE FIGURE 13
0
A
A
1
10
100
0
20
40
60
80
100
VD S , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1 0 0 0
1 0 0
1 0
1000
100
10
OPERATION IN THIS AREA LIMITE D
BY R
DS(on)
10µs
T
= 175°C
J
T
= 25°C
J
1 00µs
1 ms
1
10m s
T
T
= 25°C
= 175°C
C
J
V
= 0V
S ingle Pulse
GS
0. 1
A
1
A
0. 2
0. 6
1. 0
1. 4
1. 8
2. 2
2. 6
1
10
100
V
, Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRFP048N
70
60
50
40
30
20
10
0
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
P
DM
0.1
0.05
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFP048N
700
600
500
400
300
200
100
0
I
D
TOP
13A
22A
B OTTOM 32A
15 V
D R IVER
L
V
D S
D .U .T
AS
R
G
+
V
D D
-
I
A
20V
Ω
0 .0 1
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
= 25V
50
D D
A
175
25
75
100
125
150
V
(BR)DSS
Starting TJ , Junction Temperature (°C)
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRFP048N
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRFP048N
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
- D
-
3 .6 5 (.1 4 3 )
3 .5 5 (.1 4 0 )
5 .3 0 (.2 0 9 )
4 .7 0 (.1 8 5 )
1 5 .90 (.6 2 6)
1 5 .30 (.6 0 2)
0 .25 (.0 1 0)
M
D
B
M
2 .5 0 (.0 8 9)
1 .5 0 (.0 5 9)
- B
-
- A
-
5 .5 0 (.2 1 7 )
4
2 0 .3 0 (.80 0 )
1 9 .7 0 (.77 5 )
NOTES:
5. 50 (.2 17 )
4. 50 (.1 77 )
2 X
1
DIMENSIONING & TOLERAN CING
PER AN SI Y14.5M, 1982.
CONTROLLING DIMENSION : IN CH .
CONFORM S TO JEDEC OUTLINE
TO-247-AC.
1
2
3
2
3
- C
-
1 4.8 0 (.5 8 3 )
1 4.2 0 (.5 5 9 )
4 .3 0 (.1 7 0 )
3 .7 0 (.1 4 5 )
LEAD ASSIGN MENTS
2 .4 0 (.09 4 )
2 .0 0 (.07 9 )
0 .8 0 (. 03 1 )
0 .4 0 (. 01 6 )
1 .4 0 (.0 56 )
1 .0 0 (.0 39 )
3 X
3 X
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
2 X
2.6 0 (.10 2 )
2.2 0 (.08 7 )
0 .25 (.0 10 )
C
A
S
M
5 .45 (.2 1 5)
3 .4 0 (.1 3 3 )
3 .0 0 (.1 1 8 )
2 X
Part Marking Information
TO-247AC
E XAM P LE : THIS IS AN IRFPE 30
A
W ITH AS SE M BLY
LOT C ODE 3A 1Q
P ART NUM B ER
INTE RNA TIONA L
IR FP E30
RE CTIFIE R
LOGO
3A 1Q 9302
DA TE C ODE
(YYW W )
A SSE M BLY
LOT CODE
YY
= YE AR
W W W EE K
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
8/97
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