IRFP140N [INFINEON]
Power MOSFET(Vdss=100V, Rds(on)=0,052ohm, Id=33A); 功率MOSFET （ VDSS = 100V ， RDS（ON） = 0,052ohm ，ID = 33A ）
| 型号： | IRFP140N |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=100V, Rds(on)=0,052ohm, Id=33A) |
| 文件： | 总8页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91343B
IRFP140N
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 100V
RDS(on) = 0.052Ω
ID = 33A
l Fully Avalanche Rated
G
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowestpossibleon-resistancepersiliconarea. Thisbenefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor, providesthedesignerwithanextremelyefficient
device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
33
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10Vꢀ
Continuous Drain Current, VGS @ 10Vꢀ
Pulsed Drain Current ꢀ
23
A
110
140
0.91
±20
300
16
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy ꢀ
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
14
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Min.
––––
––––
––––
Typ.
––––
0.24
Max.
Units
RθJC
RθCS
RθJA
1.1
––––
40
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
––––
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1
10/5/98
IRFP140N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mAꢀ
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 0.052
Ω
V
S
VGS = 10V, ID = 16A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 16Aꢀ
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
2.0
11
––– 4.0
––– –––
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 94
––– ––– 15
––– ––– 43
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -20V
Qg
ID = 16A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
ns
VDS = 80V
VGS = 10V, See Fig. 6 and 13 ꢀ
VDD = 50V
–––
–––
–––
–––
8.2 –––
39 –––
44 –––
33 –––
ID = 16A
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 5.1Ω
RD = 3.0Ω, See Fig. 10 ꢀ
Between lead,
D
LD
Internal Drain Inductance
–––
–––
5.0
6mm (0.25in.)
nH
pF
G
from package
–––
–––
–––
–––
LS
Internal Source Inductance
13
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 1400 –––
––– 330 –––
––– 170 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
––– ––– 33
showing the
A
G
ISM
Pulsed Source Current
(Body Diode) ꢀ
integral reverse
––– ––– 110
S
p-n junction diode.
TJ = 25°C, IS = 16A, VGS = 0V
TJ = 25°C, IF = 16A
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.3
––– 170 250
––– 1.1 1.6
V
ns
Qrr
µC di/dt = 100A/µs ꢀ
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 16A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS
,
max. junction temperature. ( See fig. 11 )
TJ ≤ 175°C
VDD = 25V, starting TJ = 25°C, L = 2.0mH
RG = 25Ω, IAS = 16A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Uses IRF540N data and test conditions.
2
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IRFP140N
1000
100
10
VGS
15V
1 0 0 0
1 0 0
1 0
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs P ULSE W IDTH
20µs PULSE W IDTH
T
= 175°C
T
= 25°C
C
C
1
1
A
1 0 0
A
0.1
1
10
100
0.1
1
1 0
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
D S
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= 27A
D
TJ = 25°C
TJ = 175°C
V
DS = 50V
20µs PULSE W IDTH
V
= 10V
G S
1
A
10 A
4
5
6
7
8
9
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
T
J
, Junction Tem perature (°C)
VG S , Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRFP140N
2400
20
16
12
8
V
C
C
C
= 0V ,
f = 1M Hz
I
= 16A
D
G S
iss
V
V
V
= 80V
= 50V
= 20V
= C
= C
= C
+ C
+ C
,
C
SHORTE D
DS
DS
DS
gs
gd
ds
gd
ds
rss
oss
2000
1600
1200
800
400
0
C
C
iss
gd
oss
C
rss
4
FOR TE ST CIRCUIT
S EE FIGURE 13
0
A
A
1
10
100
0
20
40
60 80
100
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPE RATION IN THIS AREA LIM ITE D
BY R
DS(on)
10µs
100µs
T
J
= 175°C
1m s
T
= 25°C
J
T
T
= 25°C
= 175°C
C
J
10m s
V
= 0V
S ingle Pulse
G S
A
1
A
1000
0.4
0.8
1.2
1.6
2.0
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFP140N
RD
VDS
35
30
25
20
15
10
5
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
10%
°
, Case Temperature ( C)
T
C
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
1
D = 0.50
0.20
P
DM
0.10
0.05
0.1
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP140N
L
V
700
600
500
400
300
200
100
0
DS
I
D
TO P
6.6A
11A
16A
D.U.T.
R
G
+
-
BOTTOM
V
DD
I
10 V
AS
t
p
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
V
DD
V
= 25V
50
DD
A
25
75
100
125
150
175
V
Starting T , Junction Tem perature (°C)
DS
J
Fig 12c. Maximum Avalanche Energy
I
AS
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
Q
G
.3µF
10 V
+
V
DS
Q
D.U.T.
-
GS
GD
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFP140N
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFP140N
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
- D -
3.65 (.143)
3.55 (.140)
5.30 (.209)
4.70 (.185)
15.90 (.626)
15.30 (.602)
0.25 (.010)
D
M
B
M
2.50 (.089)
- B -
- A -
1.50 (.059)
5.50 (.217)
4
20.30 (.800)
19.70 (.775)
NOTES:
5.50 (.217)
4.50 (.177)
2X
1
DIMENSIONING & TOLERANCING
PER ANSI Y14.5M , 1982.
CONTROLLING DIMENSION : INCH.
CONFORM S TO JEDEC OUTLINE
TO-247-AC.
1
2
3
2
3
- C -
14.80 (.583)
14.20 (.559)
4.30 (.170)
3.70 (.145)
LEAD ASSIGNMENTS
2.40 (.094)
2.00 (.079)
0.80 (.031)
0.40 (.016)
1.40 (.056)
1.00 (.039)
3X
3X
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
2X
2.60 (.102)
2.20 (.087)
0.25 (.010)
C
A
S
M
5.45 (.215)
3.40 (.133)
3.00 (.118)
2X
Part Marking Information
TO-247AC
E X AM P LE : TH IS IS A N IR FP E 30
W ITH A SS E M BL Y
A
PA R T NU M B E R
IN TE RN A TIO NA L
RE CTIFIE R
LO G O
L O T CO DE 3 A1 Q
IR FP E 30
3A 1 Q 9 3 02
D ATE C O DE
(YYW W )
A S SE M BL Y
L O T CO D E
Y Y
= YE A R
W W W E EK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
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http://www.irf.com/
Data and specifications subject to change without notice. 8/98
8
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