IRFP240PBF [INFINEON]

HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
IRFP240PBF
型号: IRFP240PBF
厂家: Infineon    Infineon
描述:

HEXFET㈢ Power MOSFET
HEXFET㈢功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
文件: 总7页 (文件大小:886K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PD - 95006  
IRFP240PbF  
Lead-Free  
www.irf.com  
1
2/11/04  
IRP240PbF  
2
www.irf.com  
IRFP240PbF  
www.irf.com  
3
IRP240PbF  
4
www.irf.com  
IRFP240PbF  
www.irf.com  
5
IRP240PbF  
6
www.irf.com  
IRFP240PbF  
TO-247AC Package Outline  
Dimensions are shown in millimeters (inches)  
- D -  
3.65 (.143)  
5.30 (.209)  
4.70 (.185)  
2.50 (.089)  
15.90 (.626)  
15.30 (.602)  
3.55 (.140)  
0.25 (.010)  
D
M
B
M
- B -  
- A -  
1.50 (.059)  
5.50 (.217)  
4
20.30 (.800)  
19.70 (.775)  
NOTES:  
5.50 (.217)  
4.50 (.177)  
2X  
1
DIMENSIONING & TOLERANCING  
PER ANSI Y14.5M, 1982.  
CONTROLLING DIMENSION : INCH.  
CONFORMS TO JEDEC OUTLINE  
TO-247-AC.  
1
2
3
2
3
- C -  
14.80 (.583)  
14.20 (.559)  
4.30 (.170)  
3.70 (.145)  
LEAD ASSIGNMENTS  
Hexfet  
IGBT  
1 -Gate1-Gate  
2.40 (.094)  
2.00 (.079)  
2X  
0.80 (.031)  
0.40 (.016)  
1.40 (.056)  
1.00 (.039)  
3X  
3X  
2 - Drain2 - Collector  
3 - Source 3 - Emitter  
2.60 (.102)  
2.20 (.087)  
0.25 (.010)  
A
C
M
S
5.45 (.215)  
4 - Drain  
4 - Collector  
3.40 (.133)  
3.00 (.118)  
2X  
TO-247AC Part Marking Information  
EXAMPLE: THIS IS AN IRFPE30  
WITH ASSEMBLY  
PART NUMBER  
INTERNATIONAL  
RECTIFIER  
LOGO  
LOT CODE 5657  
ASSEMBLED ON WW 35, 2000  
IN THE ASSEMBLY LINE "H"  
IRFPE30  
035H  
57  
56  
DATE CODE  
YEAR 0 = 2000  
WE EK 35  
Note: "P" in assembly line  
position indicates "Lead-Free"  
ASSEMBLY  
LOT CODE  
LINE H  
Data and specifications subject to change without notice.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.02/04  
www.irf.com  
7

相关型号:

IRFP240R

20A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
RENESAS

IRFP241

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 19A I(D) | TO-247AC
ETC

IRFP2410

Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon
INFINEON

IRFP241CF

IRFP241CF
NSC

IRFP241R

20A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
RENESAS

IRFP242

Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
SAMSUNG

IRFP242R

18A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
RENESAS

IRFP243

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 17A I(D) | TO-247AC
ETC

IRFP243R

18A, 150V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
RENESAS

IRFP244

15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
INTERSIL

IRFP244

Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=15A)
INFINEON

IRFP244

Power MOSFET
VISHAY