IRFP3077 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;型号: | IRFP3077 |
厂家: | Infineon |
描述: | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
文件: | 总9页 (文件大小:307K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 97126
IRFP3077PbF
Applications
HEXFET® Power MOSFET
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
D
S
VDSS
RDS(on) typ.
75V
2.8m
3.3m
:
:
max.
Benefits
G
l Worldwide Best RDS(on) in TO-247
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
ID
ID
200A
c
(Silicon Limited)
120A
(Package Limited)
D
l Enhanced body diode dV/dt and dI/dt Capability
S
D
G
TO-247AC
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Parameter
Max.
200c
140c
120
Units
A
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
850
PD @TC = 25°C
340
Maximum Power Dissipation
W
2.3
Linear Derating Factor
W/°C
V
VGS
± 20
Gate-to-Source Voltage
2.5
Peak Diode Recovery f
dV/dt
TJ
V/ns
°C
-55 to + 175
Operating Junction and
TSTG
Storage Temperature Range
300
Soldering Temperature, for 10 seconds
(1.6mm from case)
10lbxin (1.1Nxm)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
Single Pulse Avalanche Energy e
EAS (Thermally limited)
200
mJ
A
Avalanche Currentꢀc
IAR
See Fig. 14, 15, 22a, 22b,
Repetitive Avalanche Energy g
EAR
mJ
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
0.44
–––
40
Units
RθJC
RθCS
RθJA
Junction-to-Case j
Case-to-Sink, Flat Greased Surface
0.24
–––
°C/W
Junction-to-Ambient j
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1
3/3/08
IRFP3077PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Min. Typ. Max. Units
75 ––– –––
––– 0.091 ––– V/°C Reference to 25°C, ID = 5mA
Conditions
VGS = 0V, ID = 250μA
V
ΔV(BR)DSS/ΔTJ
RDS(on)
–––
2.0
2.8
3.3
4.0
20
VGS = 10V, ID = 75A
mΩ
V
VGS(th)
–––
VDS = VGS, ID = 250μA
IDSS
Drain-to-Source Leakage Current
––– –––
μA VDS = 75V, VGS = 0V
––– ––– 250
––– ––– 100
––– ––– -100
V
DS = 75V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Input Resistance
nA VGS = 20V
VGS = -20V
RG
–––
1.2
–––
Ω
f = 1MHz, open drain
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 75A
nC ID = 75A
160 ––– –––
S
––– 160 220
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
–––
–––
–––
–––
–––
–––
37
42
25
87
69
95
–––
–––
–––
–––
–––
–––
V
DS = 38V
GS = 10V
V
ns VDD = 38V
ID = 75A
Rise Time
td(off)
tf
Turn-Off Delay Time
RG = 2.1Ω
VGS = 10V
Fall Time
Ciss
Coss
Crss
Input Capacitance
––– 9400 –––
––– 820 –––
––– 350 –––
––– 1090 –––
––– 1260 –––
pF VGS = 0V
VDS = 50V
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
ƒ = 1.0MHz
Coss eff. (ER)
VGS = 0V, VDS = 0V to 60V , See Fig.11
VGS = 0V, VDS = 0V to 60V , See Fig. 5
Coss eff. (TR)
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– –––
A
MOSFET symbol
D
S
200
(Body Diode)
Pulsed Source Current
showing the
integral reverse
G
ISM
––– ––– 850
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
––– –––
1.3
63
V
TJ = 25°C, IS = 75A, VGS = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 64V,
Reverse Recovery Time
–––
–––
–––
–––
–––
42
50
59
86
2.5
ns
IF = 75A
di/dt = 100A/μs
75
Qrr
Reverse Recovery Charge
89
nC
130
–––
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
ꢁ Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
.
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
.
Rθ is measured at TJ approximately 90°C
Limited by TJmax, starting TJ = 25°C, L = 0.028mH
RG = 25Ω, IAS = 120A, VGS =10V. Part not recommended for use
above this value .
ISD ≤ 75A, di/dt ≤ 400A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
2
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IRFP3077PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
≤ 60μs PULSE WIDTH
Tj = 175°C
≤ 60μs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.5
2.0
1.5
1.0
0.5
I
= 75A
D
V
= 10V
GS
T
= 175°C
J
T
= 25°C
J
V
= 25V
DS
≤ 60μs PULSE WIDTH
1
2.0
3.0
4.0
5.0
6.0
7.0
8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
V
, Gate-to-Source Voltage (V)
GS
T
, Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
16000
12000
8000
4000
0
20
V
C
= 0V,
f = 1 MHZ
I
= 75A
GS
D
= C + C , C SHORTED
iss
gs
gd ds
V
= 60V
DS
C
= C
rss
gd
16
12
8
VDS= 38V
VDS= 17V
C
= C + C
oss
ds
gd
Ciss
4
Coss
Crss
0
0
40
80
120 160 200 240 280
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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3
IRFP3077PbF
1000.0
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
100.0
10.0
1.0
100μsec
10msec
LIMITED BY PACKAGE
1msec
T
= 25°C
J
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
1.6
0.1
0.1
0.1
1.0
10.0
100.0
0.0
0.4
0.8
1.2
2.0
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
240
200
160
120
80
LIMITED BY PACKAGE
90
80
40
0
70
25
50
75
100
125
150
175
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T
, Case Temperature (°C)
C
T
, Junction Temperature (°C)
J
Fig 9. Maximum Drain Current vs.
Fig 10. Drain-to-Source Breakdown Voltage
Case Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
I
D
TOP
22A
40A
120A
800
600
400
200
0
BOTTOM
0
20
40
60
80
25
50
75
100
125
150
175
V
Drain-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
DS,
J
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
4
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IRFP3077PbF
1
0.1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
τι (sec)
Ri (°C/W)
0.01
0.02
0.01
τ
J τJ
τ
τ
Cτ
0.083889 0.000083
0.190848 0.000995
0.165682 0.007038
τ
1 τ1
τ
2 τ2
3τ3
Ci= τi/Ri
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
240
200
160
120
80
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
TOP
BOTTOM 1% Duty Cycle
= 120A
Single Pulse
I
D
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
40
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
25
50
75
100
125
150
175
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Starting T , Junction Temperature (°C)
J
Fig 15. Maximum Avalanche Energy vs. Temperature
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5
IRFP3077PbF
4.0
24
20
16
12
8
I
I
I
= 1.0A
D
D
D
= 1.0mA
= 250μA
3.0
2.0
I
= 30A
= 64V
F
V
T
R
4
= 125°C
= 25°C
J
T
J
1.0
0
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
100 200 300 400 500 600 700 800 900 1000
T
J
di / dt - (A / μs)
f
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage Vs. Temperature
24
400
20
16
12
8
300
200
I
= 30A
= 64V
I
= 45A
= 64V
F
F
100
0
V
T
V
T
R
R
4
0
= 125°C
= 125°C
J
J
T
= 25°C
T
= 25°C
J
J
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
di / dt - (A / μs)
di / dt - (A / μs)
f
f
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
400
300
200
100
0
I
= 45A
= 64V
F
V
T
R
= 125°C
J
T
= 25°C
J
100 200 300 400 500 600 700 800 900 1000
di / dt - (A / μs)
f
Fig. 20 - Typical Stored Charge vs. dif/dt
6
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IRFP3077PbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
0.01Ω
t
p
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
Pulse Width < 1μs
Duty Factor < 0.1%
td(on)
td(off)
tr
tf
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
Vgs(th)
0
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
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7
IRFP3077PbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
135H
57
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
56
DATE CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly lineposition
indicates "Lead-F ree"
LINE H
TO-247AC packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 03/08
www.irf.com
8
IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
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