IRFP4368 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;
| 型号： | IRFP4368 |
| 厂家： | 
Infineon |
| 描述： | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
| 文件： | 总9页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97322
IRFP4368PbF
Applications
l High Efficiency Synchronous Rectification in
HEXFET® Power MOSFET
SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
D
S
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
75V
1.46mΩ
1.85mΩ
G
350A
c
ID (Package Limited)
195A
Benefits
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
D
l Enhanced body diode dV/dt and dI/dt
Capability
S
D
G
TO-247AC
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
Parameter
Max.
350c
250c
195
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
1280
520
PD @TC = 25°C
W
Maximum Power Dissipation
Linear Derating Factor
3.4
W/°C
V
VGS
20
Gate-to-Source Voltage
13
Peak Diode Recovery f
dv/dt
TJ
V/ns
°C
-55 to + 175
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
300
10lbxin (1.1Nxm)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
Single Pulse Avalanche Energy e
EAS (Thermally limited)
430
mJ
A
Avalanche Currentꢀd
IAR
See Fig. 14, 15, 22a, 22b
Repetitive Avalanche Energy g
EAR
mJ
Thermal Resistance
Symbol
Parameter
Junction-to-Case k
Typ.
–––
Max.
0.29
–––
40
Units
RθJC
RθCS
RθJA
0.24
–––
°C/W
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
jk
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1
06/02/08
IRFP4368PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Min. Typ. Max. Units
75 ––– –––
––– 0.077 ––– V/°C Reference to 25°C, ID = 5mAd
Conditions
VGS = 0V, ID = 250µA
V
∆V(BR)DSS/∆TJ
RDS(on)
––– 1.46 1.85
VGS = 10V, ID = 195A g
mΩ
V
VGS(th)
2.0
–––
4.0
20
VDS = VGS, ID = 250µA
VDS = 75V, VGS = 0V
VDS = 75V, VGS = 0V, TJ = 125°C
VGS = 20V
V
IDSS
Drain-to-Source Leakage Current
––– –––
µA
––– ––– 250
––– ––– 100
––– ––– -100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
GS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 195A
650 ––– –––
S
Qg
––– 380 570
nC ID = 195A
VDS = 38V
Qgs
Qgd
Qsync
Gate-to-Source Charge
–––
79
–––
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
––– 105 –––
––– 275 –––
VGS = 10V g
ID = 195A, VDS =0V, VGS = 10V
RG(int)
td(on)
–––
Ω
Internal Gate Resistance
Turn-On Delay Time
Rise Time
0.80 –––
43 –––
–––
ns VDD = 49V
ID = 195A
RG = 2.7Ω
VGS = 10V g
tr
––– 220 –––
––– 170 –––
––– 260 –––
––– 19230 –––
––– 1670 –––
––– 770 –––
––– 1700 –––
––– 1410 –––
td(off)
Turn-Off Delay Time
Fall Time
tf
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
pF
V
GS = 0V
Coss
VDS = 50V
Crss
ƒ = 100kHz
Coss eff. (ER)
Coss eff. (TR)
V
GS = 0V, VDS = 0V to 60V i
GS = 0V, VDS = 0V to 60V h
Effective Output Capacitance (Energy Related)
i
V
Effective Output Capacitance (Time Related)
h
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– –––
A
MOSFET symbol
D
S
350
c
(Body Diode)
showing the
integral reverse
G
ISM
Pulsed Source Current
(Body Diode)ꢁdi
Diode Forward Voltage
Reverse Recovery Time
––– ––– 1280
p-n junction diode.
TJ = 25°C, IS = 195A, VGS = 0V g
VSD
trr
––– ––– 1.3
V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 64V,
––– 130 200
––– 140 210
––– 450 680
––– 530 800
ns
IF = 195A
di/dt = 100A/µs g
Qrr
Reverse Recovery Charge
nC
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
–––
9.1
–––
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
ISD ≤ 195A, di/dt ≤ 1740A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
ꢀ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements. Refer to App Notes (AN-1140).
Repetitive rating; pulse width limited by max. junction
temperature.
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
.
.
Limited by TJmax, starting TJ = 25°C, L = 0.022mH
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
RG = 25Ω, IAS = 195A, VGS =10V. Part not recommended for use
above this value.
2
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IRFP4368PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
≤
Tj = 175°C
≤
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.5
2.0
1.5
1.0
0.5
I
= 195A
= 10V
V
= 25V
D
DS
60µs PULSE WIDTH
V
≤
GS
T
= 175°C
J
T
= 25°C
J
1.0
1
2
3
4
5
6
7
-60 -40 -20
T
0
20 40 60 80 100120140160180
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
1E+006
100000
10000
1000
12.0
V
C
= 0V,
f = 1 MHZ
GS
I = 195A
D
= C + C , C SHORTED
iss
gs gd ds
C
= C
10.0
rss
gd
V
V
= 60V
= 38V
DS
DS
C
= C + C
oss
ds
gd
8.0
6.0
4.0
2.0
0.0
C
C
iss
oss
C
rss
100
1
10
, Drain-to-Source Voltage (V)
100
0
50 100 150 200 250 300 350 400
, Total Gate Charge (nC)
V
Q
DS
G
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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3
IRFP4368PbF
10000
1000
100
10
1000
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
100
10
1
100µsec
T
= 25°C
J
1msec
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
DC
10
1
0.1
1
100
0.0
0.4
0.8
1.2
1.6
2.0
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
350
95
90
85
80
75
70
Id = 5.0mA
300
250
200
150
100
50
Limited By Package
0
25
50
75
100
125
150
175
-60 -40 -20
0
T
20 40 60 80 100120140160180
, Temperature ( °C )
J
T
, Case Temperature (°C)
C
Fig 10. Drain-to-Source Breakdown Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
6.0
2000
I
D
TOP
33A
53A
5.0
4.0
3.0
2.0
1.0
0.0
1500
1000
500
0
BOTTOM 195A
10
20
V
30
40
50
60
70
80
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
Drain-to-Source Voltage (V)
DS,
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
Fig 11. Typical COSS Stored Energy
4
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IRFP4368PbF
1
0.1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.01
0.02
0.01
0.0145
0.0661
0.1257
0.0838
0.000024
0.000148
0.002766
0.017517
τ
τ
J τJ
τ
Cτ
1τ1
Ci= τi/Ri
τ
τ
τ
2τ2
3τ3
4τ4
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
∆
0.01
Tstart =25°C (Single Pulse)
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tstart = 150°C.
j = 25°C and
∆Τ
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
500
400
300
200
100
0
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
TOP
BOTTOM 1.0% Duty Cycle
= 195A
Single Pulse
I
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
25
50
75
100
125
150
175
Iav = 2DT/ [1.3·BV·Zth]
Starting T , Junction Temperature (°C)
EAS (AR) = PD (ave)·tav
J
Fig 15. Maximum Avalanche Energy vs. Temperature
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5
IRFP4368PbF
4.0
3.5
3.0
2.5
30
25
20
15
10
5
I
= 72A
= 64V
F
V
R
T = 25°C
J
T = 125°C
J
I
I
I
= 250µA
= 1.0mA
= 1.0A
D
D
D
2.0
1.5
1.0
0.5
-75 -50 -25
0
25 50 75 100 125 150 175 200
, Temperature ( °C )
0
200
400
600
800
1000
T
di /dt (A/µs)
J
F
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
30
25
20
15
10
5
1000
920
840
760
680
600
520
440
360
280
200
I
= 108A
= 64V
I
= 72A
V = 64V
R
F
F
V
R
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
1000
I
= 108A
= 64V
F
920
840
760
680
600
520
440
360
280
200
V
R
T = 25°C
J
T = 125°C
J
0
200
400
600
800
1000
di /dt (A/µs)
F
Fig. 20 - Typical Stored Charge vs. dif/dt
6
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IRFP4368PbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 20. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
V
2
GS
0.01Ω
t
p
I
AS
Fig 21b. Unclamped Inductive Waveforms
Fig 21a. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
td(on)
td(off)
tr
tf
Fig 22a. Switching Time Test Circuit
Fig 22b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
Vgs(th)
0
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 23a. Gate Charge Test Circuit
Fig 23b. Gate Charge Waveform
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7
IRFP4368PbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/08
www.irf.com
8
IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
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