IRFP9140PBF [INFINEON]
HEXFET㈢ Power MOSFET; HEXFET㈢功率MOSFET
| 型号： | IRFP9140PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET㈢ Power MOSFET |
| 文件： | 总8页 (文件大小：1732K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95991
IRFP9140PbF
Lead-Free
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1
12/22/04
IRFP9140PbF
2
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4
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IRFP9140PbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
-
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig -14 For P Channel HEXFETS
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7
IRFP9140PbF
TO-247AC Package Outline Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
IRFPE30
035H
57
ASS EMBLED ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
56
DATE CODE
YEAR 0 = 2000
WEEK 35
Note: "P" in assembly line
position indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE H
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 12/04
8
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相关型号：
IRFP9143PBF
Power Field-Effect Transistor, 16A I(D), 80V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
INFINEON
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